Dr. Zhaoyang Fan
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Research Areas:
- GaN and ZnO based electronic and optoelectronic devices and sensors
- Thin-film and nanostructure materials
Current Research Projects
- FET based chemical-bio sensors: Wide bandgap semiconductors GaN and ZnO based heterostructure field-effect transistors (HFETs) for sensing applications
- UV mLED array based active DNA microarray platform: 365 nm UV wavelength AlGaN based micro-size light-emitting diode array is used to develop an active DNA microarray platform for portable and cost-effective gene detection.
- Nanostructure oxide semiconductors for sensitized solar cells and hydrogen generation
Research Lab Affiliations:
Grants
- Nano Photonic Devices: US Army, Co-PI
- AlGaN/GaN Heterostructure Based DNA Field-Effect Transistors
Journal Publications:
- Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "III-nitride micro-emitter arrays: development and applications", J. Phys. D: Appl. Phys. 41, 094001(2008).
- R.Dahal, T.M. Al Tahtamouni, Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "AlN-based deep ultraviolet Schottky photodetectors on n-SiC substrate", Appl. Phys. Lett., 90, 263505 (2007).
- J. Li, Z.Y. Fan, R. Dahal, M. L Nakarmi, J. Y. Lin, and H. X. Jiang, "200 nm deep ultraviolet photodetectors based on AlN", Appl. Phys. Lett. 89, 213510 (2006).
- Z. Y. Fan, J. Li M. L. Nakarmi J. Y. Lin, and H. X. Jiang, "AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers," Appl. Phys. Lett. 88, 073513 (2006).
- M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Nitride deep-ultraviolet light-emitting diodes with microlens array," Appl. Phys. Lett. 86, 173504 (2005).
- M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin and H. X. Jiang, "Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys," Appl. Phys. Lett. 86, 092108 (2005).
- K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers," Appl. Phys. Lett. 85, 4777 (2004).
- Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "Recent advances in III-nitride UV materials and devices," J. Electrochem. Soc. 2004-02, 24 (2004).
- J. J. Diao, G. D. Chen, Xi Cong, Song Yan, Z. Y. Fan, and Jing Xuan, "Optical resonant of metal-coated nanoshell", Chinese Phys. 12, 100 (2003).
- Z. Y. Fan, J. Li, J. Y. Lin, and H. X. Jiang, "Delta-doped AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors with high breakdown voltages," Appl. Phys. Lett. 81, 4649 (2002).
- Z. Y. Fan, D.G. Hinks, N. Newman, and J.M. Rowell, "Experimental study of MgB2 decomposition," Appl. Phys. Lett., 79, 87 (2001).
- Z. Y. Fan and N. Newman, "Experimental determination of the rates of decomposition and cation desorption from nitride surfaces", Mat. Sci. and Eng. B87, 244 (2001).
- Z. Y. Fan, G. Rong, and N. Newman and David J. Smith, "Defect annihilation in AlN thin films by ultrahigh temperature processing," Appl. Phys. Lett. 76, 1839 (2000).
- Z. Y. Fan, G. Rong, J. Browning and N. Newman, "High temperature Growth of AlN by Plasma-enhanced Molecular Beam Epitaxy", Mat. Sci. and Eng. B67, 80 (1999).
- Z. Y. Fan and N. Newman, "Precise control of atomic nitrogen production in an ECR plasma using N2/noble gas mixtures," Appl. Phys. Lett. 73, 456 (1998).
- Z. Y. Fan and N. Newman, "Kinetic energy distribution of nitrogen ions in an electron cyclotron resonance (ECR) plasma", J. Vac. Sci. Technol. A16, 2132 (1998).
- Z. Y. Fan and Liangju Zhang, "Multithreaded programming concepts and its applications", Mini- and Micro Computer System (in Chinese), 17, 1 (1996).
- Z. Y. Fan, Liangju Zhang, Xu Liu, and Youhua Zhang, "I/O operation of non-standard VAX/VMS devices in VAX/VMS systems", Mini- and Micro Computer System (in Chinese), 16, 54 (1995).
Conference Publications:
- R. Dahal, J. Li, Z. Y. Fan, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang, " AlN MSM and Schottky photodetectors", Phys. Stat. Sol. (c) , 5, 2148 (2008).
- Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "Achieving conductive high Al-content AlGaN alloys for deep UV photonics", Proc. SPIE 6479, 64791I (2007), invited.
- Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "III-nitride deep ultraviolet micro- and nano-photonics," Proc. SPIE 6127, 61271C (2006), invited.
- Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang, Y. Liu, J. A. Bardwell, J. B. Webb, and H. Tang, "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the delta-doped barrier layer", MRS Proc. L9.11, (2002).
- Z. Y. Fan, G. Rong,, N. Newman, D.J. Smith, and D. Chandrasekhar, "MBE growth and ultrahigh temperature processing of high-quality nitride films", MRS Proc. 587, O7.2.1 (2000).
Invited talks, Presentations and Seminars
- "Recent Progresses in Nitride Research", Kansas State University, Sept. 2006, Manhattan, Kansas
- "Insulating Gate AlGaN/GaN Heterostructure Field Effect Transistors", APS March Meeting, Mar. 3-7, 2003, Austin, Texas
- "Delta-Doped AlGaN/GaN MOSHFETs with High Breakdown Voltages", MRS Fall Meeting, Dec. 2-6, 2002, Boston, Massachusetts
- "Optimizing the Quality of MBE-Grown AlN: the Role of Al Surface Lifetime and AlN Decomposition", Lawrence Symposium on Critical Issues in Epitaxy, Jan. 3-6, 2001, Scottsdale, Arizona
- "AlN-Based Overlayers for III-N Substrates", MRS Fall Meeting, Nov. 29 Dec. 3, 1999, Boston, Massachusetts
Senior Personnel:
Dr. Yahya Alivov (Yahya.Alivov@ttu.edu)
Ph.D Students:
Mr. Yong Zhao (Yong.Zhao@ttu.edu)
Ms. Xuan Pan (Xuan.Pan@ttu.edu)
Undergraduate Students:
Mr. James-William Braxton-Bragg
Teaching:
- EE4314/5314: Solid State Devices, Fall 2008
- EE4360/5360: Fiber Optic System, Spring 2008