Sergey Nikishin
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Research Lab Affiliations:
Grants:
- Army/SBCCOM 2001, "Microsystems for detecting liquid and gaseous hazards", H. Temkin, T. Dallas, P. Dasgupta, M. Holtz, B. Temkin, J. Berg, S. Gangopadhyaa, S. Nikishin, $ 389,660
- Government of Vietnam 2002, "Computer simulation of LED structures", S. Nikishin, $ 12,600
- Army/SBCCOM 2002, "Autonomous Wireless Chemical and Biological Sensors", H. Temkin, T. Dallas, P. Dasgupta, M. Holtz, B. Temkin, J. Berg, S. Gangopadhyaa, S. Nikishin, $ 390,000
- NSF 2002, "Nano-arrays of large bandgap semiconductors for light emitting and spintronic devices", H. Temkin, S. Nikishin, M. Holtz, R. Gale, L. Menon, $ 1,724,620
- NSF 2003, " Device Processing Studies of Aluminum-Rich AlGaN Superlattices", M. Holtz, S. Nikishin, H. Temkin, $ 759,329
- S. A. Nikishin et al. "Short period superlattices of AlN/Al 0.08Ga 0.92N grown on AlN substrates", Appl. Phys. Lett., 85, No 19, (2004).
- K. Zhu, G. Kipshidze, V. Kuryatkov, B. Borisov, J. Yun, S. A. Nikishin, H. Temkin, C. Ramkumar, and M. Holtz, "Evolution of s urface roughness of AlN and GaN induced by inductively coupled Cl 2/Ar plasma etching", J. Appl. Phys., 95, 4635 (2004)
- V. A. Elyukhin, L. P. Sorokina, and S. A. Nikishin "Precipitation in Al xGa (1-x)N yAs (1-y) alloys", Grystal Growth & Design, 4, No. 2, pp. 337-341 (2004).
- S. A. Nikishin et al. ,"Deep Ultraviolet Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGa(In)N", Jap. J. Appl. Phys., 42, L1362 (2003).
- G. Kipshidze, V. Kuryatkov, K. Zhu, B. Borisov, M. Holtz, S. Nikishin, and H. Temkin, "AlN/AlGaInN superlattice light-emitting diodes at 280 nm", J. Appl. Phys., 93, 1363-6 (2003).
- V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, and M. Holtz, "Solar-blind ultraviolet photodetectors based on superlattices of AlN/AlGa(In)N", Appl. Phys. Lett. 82, 1323-5 (2003)
- A. S. Zubrilov, S. A Nikishin, G. D. Kipshidze, V. V. Kuryatkov, H. Temkin, T. I. Prokofyeva, and M. Holtz, "Optic properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia", J. Appl. Phys., 91 (3), 1209 - 1212 (2002)
- H. Harris, K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, and H. Temkin, "HfO 2 Gate Dielectric with 0.5 nm Equivalent Oxide Thickness", Appl. Phys. Lett., 81, 1065 - 1067 (2002).
- C. Jin, S. Nikishin, V. I. Kuchinskii, H. Temkin, and M. Holtz, "Metalorganic molecular beam epitaxy of (In)GaAsN with dimethylhydrazin", J. Appl. Phys., 91 (1), 56 - 64 (2002).
- S. Nikishin et al., "Gas source molecular beam epitaxy of high quality Al xGa 1-xN (0 £ x £ 1) on Si(111)", J. Vac. Sci. Technol. B 19 (4), 1409 - 1412 (2001).
- S. A. Nikishin et al., "AlGaN grown on Si(111) by gas source molecular beam epitaxy", Appl. Phys. Lett., 76, no. 21, 3028-30, (2000).
- S. A. Nikishin et al., "High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia", Appl. Phys. Lett., 75, 2073 (1999).
- Temkin H and Nikishin S. A., "Method of epitaxial growth of high quality nitride layers on silicon substrates", USA Pat. No. 6391748 B1, filed - October 3 (2000).
- Nikishin S. A., Sharupin B. N., "Method of cleaning of pyrolytic boron nitride", USSR Pat. no. 1614415, filed - January 3 (1989).
- Nikishin S. A., Kizhaev K. Yu., Sinyavskii D. V., An V. A., "Method of liquid phase epitaxy", USSR Pat. no. 1415822, filed - January 6 (1986).
- Nikishin S. A., Karpov S. Yu., Portnoi E. L., Sinyavskii D. V., "Method of liquid phase epitaxy of the multi-wavelength AlGaAs/GaAs heterostructures", USSR Pat. no. 1271152, filed - July 11 (1984).
- Nikishin S. A., Karpov S. Yu., "Fabrication method of heterostructures based on semiconductor compounds and solid solutions", USSR Pat. no. 1195842, filed - December 28 (1983).
- Nikishin S. A., Mil'vidskii M. G., Portnoi E. L., Seisyan R. P., "Method of selective growth of semiconductor heterostructures", USSR Pat. no. 1042520, filed - February 11 (1982).
- Alferov Zh. I., Nikishin S. A., Mil'vidskii M. G., Portnoi E. L., "Method of liquid phase electro-epitaxy", USSR Pat. no. 955749, filed - December 17 (1979).
- Nikishin S. A., Mil'vidskii M. G., Seisyan R. P., "Method of selective growth of semiconductor heterostructures", USSR Pat. no. 776401, filed - October 9 (1978).
Teaching: