Sixuan Jin
Research and Teaching 2008 - Current Visiting Professor in Electrical Engineering, Texas Tech University
1999 - 2008 Visiting Professor in Physics Department, Kansas State University.
GaN-based Micro-LED and Micro-display devices, UV/blue light emmitting devices fabrication
and characterization.
1998 - 1999 Senior Research Engineer in National Key Laboratory of Artificial Microstructural and Mesoscopic Physics,
Peking University.
GaN-basedblue light emitting devices research and fabrication
1997-1998 Visiting Professor in Physics Department, Kansas State University.
Design and Set up a MOCVD System for nitride materials growth
1993-1997 Senior Engineer in the National Key Laboratory of Artificial Microstructural and Mesoscopic Physics, Peking
University.
(1) III-nitride material growth by MOCVD, the electrical and optical properties of GaN, InGaN
(2) Ohmic and Schottky contacts on n-type and p-type GaN
(3) Fabrication of GaN-based blue light emitting diodes.
1978-1993 Assistant Professor in Physics Department, Peking University.
(1) Teaching: Experiments of Modern Physics; Experiments of Semiconductor Physics; Semiconductor integrating circuits;
(2) Research: The behavior of hydrogen in Si and GaAs; Electrical properties of solidC60, C70 on crystalline silicon;
Effects of electron irradiation on semiconductor devices; Deep level impurities and defects in Si and GaAs; Switch
transistor (3DK4) and Microwave devices .
Patent and Awards 1). US Patent 6410940 entitled “Micro-size and detector arrays for minidisplay, hyper- bright light emitting diodes, lighting,
and UV detector and imaging sensor applications”.
Inventor: H.X. Jing, Jingyu. Lin, S.X.Jin and Jing Li
2). US Patent, pending. “Light emitting diodes for General lighting”
Inventor: H. X. Jiang, J. Y. Lin, and S. X. Jin
3). China Patent ZL 95101275.4
International Category number: C30B 25/02
Entitled“The equipment and method of growth single-crystal film of the nitride by
Metal-Organic Vapor Epitaxy”.
Inventor: Zhang Guoyi, Tong, yuzheng, Dang xiaozhong, Jin Sixuan.
4). Third Award for Science Progress by National Education Committee of People ‘s Republic
of China for the study of Hydrogen in Si, GaAs, Non-crystal Silicon.
Certificate Number: 95 - 284
Qin- Guo Gang and Jin sixuan (Seventh winner ) etc.
Publications 1. “Electroluminecent properties of erbium –doped III-N light-emitting diodes” J.M.Zavada, S.X.Jin, N.Nepal, J.Y.Lin,
H.X.Jiang. P.Chow and B.hertog. Appl Phys Lett (U.S) 84,Page 1061-1063. (2004)
2. “III-nitride ultraviolet light-emitting diodes with delta doping” K.h.Kim, J.Li, S.X.Jin, J.Y.Lin, H.X.Jiang. Appl Phys Lett
(U.S) 83,Page 566-568. (2003)
3 “GaN-based waveguide devices for long-wavelength optical communications” R.Hui.S.Taherion.Y.Wan (KU) J.Li,
S.X.Jin, J.Y.Lin, H.X.Jiang.(KSU) Appl Phys Lett (U.S) 82,Page 1326-1328. (2003)
4. “Size dependence of III-nitride microdisk light-emitting diode characteristics” S.X.Jin,J. Shakya, J.Y.Lin,
H.X.Jiang. Appl Phys Lett,(U.S) 78, page 3532-3534( 2001)
5. “III- Nitride Blue Microdisplays” H.X.Jiang, S.X.Jin, J.Li, J.Shakya, and J.Y.Lin Appl Phys Lett 78 (U.S) page
1303-1305(2001)
6. “ InGaN/GaN quantum well interconnected micro-disk light emitting diodes” S.X.Jin, J.li, J.Y.Lin,and H.X.Jiang. Appl
Phys Lett (U.S) 77, page 3236-3238 (2000)
7. “GaN micro-disk light emitting diodes” S.X .Jin, J.li, J.Z.Li, J.Y.Lin and H.X.Jiang Appl Phys Lett,(U.S) 76, page
631-633(2000)
8. “Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN " W. H. Sun, K,
M. Chen, Z. J. Yang, J. Li, Y. Z. Tong, S. X. Jin, G. Y. Zhang, Q. L. Zhang, and G. G. Qin J. Appl. Phys. 85, 6430
(1999)
9. “ Growth and doping characteristics of InGaN film grown by MOCVD” Y.Z.Tong, F.Li Z.j.Yang,S.XJin, X.M.Ding,
G.Y.Zhang, and Z.Z.Gan. Solid State Comunications, 109, 173-176. (1998)
10. “Relationship of background carrier concentration and defects in GaN grown by metal organic vaporphase epitaxy” G.
Y. Zhang, Y. Z. Tong, Z. J. Yang , S.X.Jin , J. Li, and Z. Z. Gan. Appl. Phys.Lett.(U.S) 71, 3376 (1997)
11. “ Low temperature photoluminescence properties of InGaN films grow on (0112) AI2O3 and (0001) Al2O3 substrates
by low pressure MOCVPE” Tong Yuzhen, Zhang Gouyi,Jin Sixuan,Yang Zhijian, Dang Xiaozhong, and Wang Shumin.
Solid State Communication 102, page 405 - 408 (1997)
12. “Effects of thermal convection on growth rate of GaN by MOCVPE” G.Y. Zhang, Y.Z. Tong, S.X.Jin, X.Z. Dang,
Z.J.Yang, and Z.Z.Gan. Solid State Communications (U.K) 102, page331- 334 (1997)
13. “ Electrical properties of contact of solid C60 and N-type GaAs” Chen Kaimao, Zhang Yaxiong.Qin Guogang, Jin
Sixuan, Wu Ke, Li Chuanyi,Gu Zhenna, Zhou Xihuang. Chin. J. Semiconds. Vol 18, No.1 (1997)
14. “Rectification properties and interface state of herterojunctions between solid C60 and p-type GaAs” Chen Kaimao,
Chen Yin, Zhang yaxiong, Jin sixuan, wuke, Li chuanyi. Chinese Journal of Semiconductor 19 (9) 1997
15. “Electron states at a solid C60/Si (111) interface” Y.X.Zhang,K.M.Chen, G.G.Qin,K.Wu,C.Y.Li S.X.Jin, Z.N.Gu, and
X.H.Zhou. J.Phys,Condens.Matter 8 L691-L696(1996)
16.“Investigation of photoluminesence excitation spectra from GaN film grown by low pressure MOCVD" Duan Jiaqi,
Zhang Borui, Qing Guoqang, Zang Guoyi, Tong Yuzhen, Jin Sixuan, Yang Zhijian , and Yao Guangqing. Chinese Journal
of Semiconductor. Vol17, No 8.pp637-640.(1996)
17. “P-type GaN Directly grown by LP-MOCVD” Zhang Guoyi, Yang Zhijian, Tong Yuzhen, Jin sixuan, Dang
Xiaozhong, and Wang Shumin .Third Chinese Optelectronics workshop 12-18 August (1996).
18. “Raman scattering spectra of GaN grown by MOCVD” Tong Yuzhen, Zhang Guoyi, Xu Ziliang, Dang Xiaozhong,
Wang Jingjing, Jin Sixuan, Wang Shuming, Liu Hongdu.J. Infrared Millim. Waves.
(China)Vol.15, No1 (1996)
19."Rectification properties and interface states of heterojunctions between solid C60 and
n-type GaAs ” K. M. Chen, Y. X. Zhang, G. G. Qin, S. X. Jin, K. Wu, C. Y. Li, Z. N. Gu,
and X. H. Zhou Appl. Phys. Lett. 69, 3557 (1996)
20.“Deep leves and free-carrier compensation in nitrogen-lmplanted GaAs” Chen Kai-mao, Jin
Si-xuan, Jia Yong-qiang, Qiu Su-juan, lu Yu-nan,He Mei-fen and Liu Hong-fei. Acta Physica
Sinica.Vol 45 No.3 March (1996)
21."Controlling the Schottky barrier height of Ti/n-GaAs Schottky diode containing hydrogen
by biased annealing”, S. X. Jin, M. H. Yuan, H. Z. Song, G. G. Qin, et al., Science in
China (A), 37, (6), 730-737(1994).
22.“The capture cross section and the energy distribution of Si/SiO2 interface states”, K.
M. Chen, J. C., Mao, L. Q. Wu, S. X. Jin, and H. F. Liu, J. Semiconds. (China), 15, (5),
295-303(1994).
23.“Heterojunctions of solid C60 and crystalline silicon: rectifying properties and barrier
heights”, K. M. Chen, Y. Q. Jia, S. X. Jin, et al., J. Phys.: Condensed Matter (U. K.), 7,
L201-L207, (1995).
24. “ Heterojunctions of solid C70 and crystalline silicon: rectifying properties and barrier heights”, K. M. Chen, K. Wu,
Y. Chen, Y. Q. Jia, S. X. Jin, et al., Appl. Phys. Lett (U.S) 67, (12), 1683-1685(1995).
25.“ Electrical properties of the contact of solid C70 and P-type crystalline silicon”Chen
Kaimao,Jia Yongqiang, Wu Ke, Jin Sixuan, Li. Chuanyi, Zhou Xihuang and Gu Zhennan. Chin.J.
Semiconds. Vol.16, No.10 (1995)
26.“ Deep levels in nitrogen-implanted n-type GaAs”, K. M. Chen, Y. Q. Jia, Y. Chen, A. P.
Li, S. X. Jin, H. F. Liu, J. Appl. Phys.(U.S) 78, (6), 4261-4263(1995).
27. “ Study on etching of GaN single crystal film”, S. X. Jin, X. M. Ding, X. M. Cui, Y.
Z. Tong, X. Z. Dong, Z. J. Yang, Y. Lin, G. Y. Zhang, Acta Photonica.Sinica,(China) Vol 24,
No Z3, 40-44(1995).
28.“Characteristics of Nb/C60 /P-Si structure”, K. M. Chen, S. X. Jin, Y. Q. Jia, K.Wu,
C.Y.Li, Z.N.Gu.and X.H.Zhou.. Chin. J. Semiconds.(China), 15, (10), 716-737(1994).
29.“High quality GaN growth on (0112) Sapphire substrate by low pressure MOCVD”, G. Y.
Zhang, Y. Z. Tong, X. Z. Dang, S. X. Jin, F. G. Hong, W. X. Chen, S. M. Wang, H. D. Liu,
C-MRS and E-MRS Joint Symposium on Electronic and Opt electric Materials, (1994), P14,
Beijing, China.
30.“ Bias-temperature effect in a rectifying Nb/C60 /P-Si structure evidence for mobile
negative charges in solid C60 film”, K. M. Chen, Y. Q. Jia, S. X. Jin, et al., J. Phys:
Condensed Matter (U. K.), 6, L367-372(1994).
31.“Controlling Au/N-Si Schottky arrier containing hydrogen by zero bias annealing and
reverse bias annealing” Yuan Min-hua, Qiao Yong-ping, Song Hai-zhi, Jin Si-xuan and Qin
Guo-gang. Acta Physica Sinica. Vol 43, No.6 (1994)
32.“r radiation defects in semi-insulating LEC GaAs after shallow impurity implantation”,
K.M. Chen, S. X. Jin, et al., Acta Physica Sinica (China), Vol. 43, (8), 1344-1351(1994).
33.“ Properties of minority carrier traps and the hole traps in semi-insulating LEC GaAs
after Si and Be-coplantation”, K. M. Chen, S. X. Jin, and S. J. Qiu, Acta Physica Sinica
(China), Vol. 43, (8), 1352-1359(1994).
34. “Effects of reverse-bias annealing and zero-bias annealing on a hydrogen containing Au/(n-type GaAs) Schottky
barrier”, M. H. Yuan, H. Z. Song, S. X. Jin, H. P. Wang, Y. P. Qiao, and G. G. Qin, Phys. Rev. B.(U.S) 48, (24),
17986-17994 (1993).
35. “Controlling of Schottky barrier heights for Au/n-GaAs with hydrogen after metal deposition by bias annealing”, S. X.
Jin, H. P. Wang, M. H. Yuan, H. Z. Song, G. G. Qin, et al, Appl. Phys. Lett.(U.S) 62, (21), 2719-2721(1993).
36. “Interface states and deep center in Au-doped MOS structures”, K. M. Chen, S. X. Jin, L. Q. Wu, and H. F. Liu,
Acta Physica Sinica (China), Vol. 42, (8), 1324-1331(1993).
37. “Controlling effect of bias annealing on Ti/n-GaAs Schottky barrier containing hydrogen”, S. X. Jin, M. H. Yuan,
L. P. Wang, H. Z. Song, and G. G. Qin, Science in China (A), Vol. 23, (6), 617-622(1993).
38.“Effects of hydrogen on the Schottky barrier of Ti/n-GaAs diodes”, S. X. Jin, L. P.
Wang, M. H. Yuan, J. J. Chen, Y. Q. Jia, and G. G. Qin, J. Appl. Phys. (U.S) 71, (1),
536-538(1992).
39.“Effects of reverse bias annealing and zero bias annealing on Ti/n-Ga As and Au/n-GaAs
Schottky barriers containing hydrogen”, G. G. Qin, M. H. Yuan, S. X. Jin, et al.,
Materials Science Forum (Swaziland), Vol 83-87, 587-592(1992)
40. "Negative charge state of hydrogen species in n-type GaAs ” M.H.Yuan, L.P.Wang,
S.X.Jin, and J.J, Chen and G.G.Qin, Appl. Phys. Lett. (U.S) 58, (9), 925-927(1991).
41. "A method of determining if two or more deep levels belong the same center”, K. M.
Chen, S. X. Jin, L. Q. Wu, X. Q. Tan, Acta Physica Sinica (China), Vol. 38, (9), 1391-1399
(1989), translated and reprinted in Chinese. Physics. (U. S. A.) Vol. 10, (3) July-Sept
(1990).
42.“The stability of electron irradiation transistor”, Z. A. Wang, S. X. Jin,
Semiconductor of technique (China) (6) 30-34(1988).
43.“A method for measuring carrier capture cross section of deep centers with eliminating
the influence of in homogeneous carrier distribution”, K. M. Chen, G. G. Qin, Z. A. Wang,
S. X. Jin, Acta Physica Sinica (China), 33, (4), 486-495 (1984).
Patent and Awards 1). US Patent 6410940 entitled ˇ°Micro-size and detector arrays for minidisplay, hyper- bright light emitting diodes, lighting,
and UV detector and imaging sensor applicationsˇ±.
Inventor: H.X. Jing, Jingyu. Lin, S.X.Jin and Jing Li
2). US Patent, pending. ˇ°Light emitting diodes for General lightingˇ±
Inventor: H. X. Jiang, J. Y. Lin, and S. X. Jin
3).
International Category number: C30B 25/02
Entitledˇ°The equipment and method of growth single-crystal film of the nitride by
Metal-Organic Vapor Epitaxyˇ±.
Inventor: Zhang Guoyi, Tong, yuzheng, Dang xiaozhong, Jin Sixuan.
4). Third Award for Science Progress by National Education Committee of People ˇ®s Republic
of China for the study of Hydrogen in Si, GaAs, Non-crystal Silicon.
Certificate Number: 95 - 284
Qin- Guo Gang and Jin sixuan (Seventh winner ) etc.
Publications 1. ˇ°Electroluminecent properties of erbium -doped III-N light-emitting diodesˇ± J.M.Zavada, S.X.Jin, N.Nepal, J.Y.Lin,
H.X.Jiang. P.Chow and B.hertog. Appl Phys Lett (U.S) 84,Page 1061-1063. (2004)
2. ˇ°III-nitride ultraviolet light-emitting diodes with delta dopingˇ± K.h.Kim, J.Li, S.X.Jin, J.Y.Lin, H.X.Jiang. Appl Phys Lett
(U.S) 83,Page 566-568. (2003)
3 ˇ°GaN-based waveguide devices for long-wavelength optical communicationsˇ± R.Hui.S.Taherion.Y.Wan (KU) J.Li,
S.X.Jin, J.Y.Lin, H.X.Jiang.(KSU) Appl Phys Lett (U.S) 82,Page 1326-1328. (2003)
4. ˇ°Size dependence of III-nitride microdisk light-emitting diode characteristicsˇ± S.X.Jin,J. Shakya, J.Y.Lin,
H.X.Jiang. Appl Phys Lett,(U.S) 78, page 3532-3534( 2001)
5. ˇ°III- Nitride Blue Microdisplaysˇ± H.X.Jiang, S.X.Jin, J.Li, J.Shakya, and J.Y.Lin Appl Phys Lett 78 (U.S) page
1303-1305(2001)
6. ˇ° InGaN/GaN quantum well interconnected micro-disk light emitting diodesˇ± S.X.Jin, J.li, J.Y.Lin,and H.X.Jiang. Appl
Phys Lett (U.S) 77, page 3236-3238 (2000)
7. ˇ°GaN micro-disk light emitting diodesˇ± S.X .Jin, J.li, J.Z.Li, J.Y.Lin and H.X.Jiang Appl Phys Lett,(U.S) 76, page
631-633(2000)
8. ˇ°Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN " W. H. Sun, K,
M. Chen, Z. J. Yang, J. Li, Y. Z. Tong, S. X. Jin, G. Y. Zhang, Q. L. Zhang, and G. G. Qin J. Appl. Phys. 85, 6430
(1999)
9. ˇ° Growth and doping characteristics of InGaN film grown by MOCVDˇ± Y.Z.Tong, F.Li Z.j.Yang,S.XJin, X.M.Ding,
G.Y.Zhang, and Z.Z.Gan.
10. ˇ°Relationship of background carrier concentration and defects in GaN grown by metal organic vaporphase epitaxyˇ± G.
Y. Zhang, Y. Z. Tong, Z. J. Yang , S.X.Jin , J. Li, and Z. Z. Gan. Appl. Phys.Lett.(U.S) 71, 3376 (1997)
11. ˇ° Low temperature photoluminescence properties of InGaN films grow on (0112) AI2O3 and (0001) Al2O3 substrates
by low pressure MOCVPEˇ± Tong Yuzhen, Zhang Gouyi,Jin Sixuan,Yang Zhijian, Dang Xiaozhong, and Wang Shumin.
Solid State Communication 102, page 405 - 408 (1997)
12. ˇ°Effects of thermal convection on growth rate of GaN by MOCVPEˇ± G.Y. Zhang, Y.Z. Tong, S.X.Jin, X.Z. Dang,
Z.J.Yang, and Z.Z.Gan. Solid State Communications (U.K) 102, page331- 334 (1997)
13. ˇ° Electrical properties of contact of solid C60 and N-type GaAsˇ± Chen Kaimao, Zhang Yaxiong.Qin Guogang, Jin
Sixuan, Wu Ke, Li Chuanyi,Gu Zhenna, Zhou Xihuang. Chin. J. Semiconds. Vol 18, No.1 (1997)
14. ˇ°Rectification properties and interface state of herterojunctions between solid C60 and p-type GaAsˇ± Chen Kaimao,
Chen Yin, Zhang yaxiong, Jin sixuan, wuke, Li chuanyi. Chinese Journal of Semiconductor 19 (9) 1997
15. ˇ°Electron states at a solid C60/Si (111) interfaceˇ± Y.X.Zhang,K.M.Chen, G.G.Qin,K.Wu,C.Y.Li S.X.Jin, Z.N.Gu, and
X.H.Zhou. J.Phys,Condens.Matter 8 L691-L696(1996)
16.ˇ°Investigation of photoluminesence excitation spectra from GaN film grown by low pressure MOCVD" Duan Jiaqi,
Zhang Borui, Qing Guoqang, Zang Guoyi, Tong Yuzhen, Jin Sixuan, Yang Zhijian , and Yao Guangqing. Chinese Journal
of Semiconductor. Vol17, No 8.pp637-640.(1996)
17. ˇ°P-type GaN Directly grown by LP-MOCVDˇ± Zhang Guoyi, Yang Zhijian, Tong Yuzhen, Jin sixuan, Dang
Xiaozhong, and Wang Shumin .Third Chinese Optelectronics workshop 12-18 August (1996).
18. ˇ°Raman scattering spectra of GaN grown by MOCVDˇ± Tong Yuzhen, Zhang Guoyi, Xu Ziliang, Dang Xiaozhong,
Wang Jingjing, Jin Sixuan, Wang Shuming, Liu Hongdu.J. Infrared Millim. Waves.
(
19."Rectification properties and interface states of heterojunctions between solid C60 and
n-type GaAs ˇ± K. M. Chen, Y. X. Zhang, G. G. Qin, S. X. Jin, K. Wu, C. Y. Li, Z. N. Gu,
and X. H. Zhou Appl. Phys. Lett. 69, 3557 (1996)
20.ˇ°Deep leves and free-carrier compensation in nitrogen-lmplanted GaAsˇ± Chen Kai-mao, Jin
Si-xuan, Jia Yong-qiang, Qiu Su-juan, lu Yu-nan,He Mei-fen and Liu Hong-fei. Acta Physica
Sinica.Vol 45 No.3 March (1996)
21."Controlling the Schottky barrier height of Ti/n-GaAs Schottky diode containing hydrogen
by biased annealingˇ±, S. X. Jin, M. H. Yuan, H. Z. Song, G. G. Qin, et al., Science in
China (A), 37, (6), 730-737(1994).
22.ˇ°The capture cross section and the energy distribution of Si/SiO2 interface statesˇ±, K.
M. Chen, J. C., Mao, L. Q. Wu, S. X. Jin, and H. F. Liu, J. Semiconds. (China), 15, (5),
295-303(1994).
23.ˇ°Heterojunctions of solid C60 and crystalline silicon: rectifying properties and barrier
heightsˇ±, K. M. Chen, Y. Q. Jia, S. X. Jin, et al., J. Phys.: Condensed Matter (U. K.), 7,
L201-L207, (1995).
24. ˇ° Heterojunctions of solid C70 and crystalline silicon: rectifying properties and barrier heightsˇ±, K. M. Chen, K. Wu,
Y. Chen, Y. Q. Jia, S. X. Jin, et al., Appl. Phys. Lett (U.S) 67, (12), 1683-1685(1995).
25.ˇ° Electrical properties of the contact of solid C70 and P-type crystalline siliconˇ±Chen
Kaimao,Jia Yongqiang, Wu Ke, Jin Sixuan, Li. Chuanyi, Zhou Xihuang and Gu Zhennan. Chin.J.
Semiconds. Vol.16, No.10 (1995)
26.ˇ° Deep levels in nitrogen-implanted n-type GaAsˇ±, K. M. Chen, Y. Q. Jia, Y. Chen, A. P.
Li, S. X. Jin, H. F. Liu, J. Appl. Phys.(U.S) 78, (6), 4261-4263(1995).
27. ˇ° Study on etching of GaN single crystal filmˇ±, S. X. Jin, X. M. Ding, X. M. Cui, Y.
Z. Tong, X. Z. Dong, Z. J. Yang, Y. Lin, G. Y. Zhang, Acta Photonica.Sinica,(China) Vol 24,
No Z3, 40-44(1995).
28.ˇ°Characteristics of Nb/C60 /P-Si structureˇ±, K. M. Chen, S. X. Jin, Y. Q. Jia, K.Wu,
C.Y.Li, Z.N.Gu.and X.H.Zhou.. Chin. J. Semiconds.(China), 15, (10), 716-737(1994).
29.ˇ°High quality GaN growth on (0112) Sapphire substrate by low pressure MOCVDˇ±, G. Y.
Zhang, Y. Z. Tong, X. Z. Dang, S. X. Jin, F. G. Hong, W. X. Chen, S. M. Wang, H. D. Liu,
C-MRS and E-MRS Joint Symposium on Electronic and Opt electric Materials, (1994), P14,
Beijing, China.
30.ˇ° Bias-temperature effect in a rectifying Nb/C60 /P-Si structure evidence for mobile
negative charges in solid C60 filmˇ±, K. M. Chen, Y. Q. Jia, S. X. Jin, et al., J. Phys:
Condensed Matter (U. K.), 6, L367-372(1994).
31.ˇ°Controlling Au/N-Si Schottky arrier containing hydrogen by zero bias annealing and
reverse bias annealingˇ± Yuan Min-hua, Qiao Yong-ping, Song Hai-zhi, Jin Si-xuan and Qin
Guo-gang. Acta Physica Sinica. Vol 43, No.6 (1994)
32.ˇ°r radiation defects in semi-insulating LEC GaAs after shallow impurity implantationˇ±,
K.M. Chen, S. X. Jin, et al., Acta Physica Sinica (China), Vol. 43, (8), 1344-1351(1994).
33.ˇ° Properties of minority carrier traps and the hole traps in semi-insulating LEC GaAs
after Si and Be-coplantationˇ±, K. M. Chen, S. X. Jin, and S. J. Qiu, Acta Physica Sinica
(China), Vol. 43, (8), 1352-1359(1994).
34. ˇ°Effects of reverse-bias annealing and zero-bias annealing on a hydrogen containing Au/(n-type GaAs) Schottky
barrierˇ±, M. H. Yuan, H. Z. Song, S. X. Jin, H. P. Wang, Y. P. Qiao, and G. G. Qin, Phys. Rev. B.(U.S) 48, (24),
17986-17994 (1993).
35. ˇ°Controlling of Schottky barrier heights for Au/n-GaAs with hydrogen after metal deposition by bias annealingˇ±, S. X.
Jin, H. P. Wang, M. H. Yuan, H. Z. Song, G. G. Qin, et al, Appl. Phys. Lett.(U.S) 62, (21), 2719-2721(1993).
36. ˇ°Interface states and deep center in Au-doped MOS structuresˇ±, K. M. Chen, S. X. Jin, L. Q. Wu, and H. F. Liu,
Acta Physica Sinica (China), Vol. 42, (8), 1324-1331(1993).
37. ˇ°Controlling effect of bias annealing on Ti/n-GaAs Schottky barrier containing hydrogenˇ±, S. X. Jin, M. H. Yuan,
L. P. Wang, H. Z. Song, and G. G. Qin, Science in China (A), Vol. 23, (6), 617-622(1993).
38.ˇ°Effects of hydrogen on the Schottky barrier of Ti/n-GaAs diodesˇ±, S. X. Jin, L. P.
Wang, M. H. Yuan, J. J. Chen, Y. Q. Jia, and G. G. Qin, J. Appl. Phys. (U.S) 71, (1),
536-538(1992).
39.ˇ°Effects of reverse bias annealing and zero bias annealing on Ti/n-Ga As and Au/n-GaAs
Schottky barriers containing hydrogenˇ±, G. G. Qin, M. H. Yuan, S. X. Jin, et al.,
Materials Science Forum (Swaziland), Vol 83-87, 587-592(1992)
40. "Negative charge state of hydrogen species in n-type GaAs ˇ± M.H.Yuan, L.P.Wang,
S.X.Jin, and J.J, Chen and G.G.Qin, Appl. Phys. Lett. (U.S) 58, (9), 925-927(1991).
41. "A method of determining if two or more deep levels belong the same centerˇ±, K. M.
Chen, S. X. Jin, L. Q. Wu, X. Q. Tan, Acta Physica Sinica (China), Vol. 38, (9), 1391-1399
(1989), translated and reprinted in Chinese. Physics. (U. S. A.) Vol. 10, (3) July-Sept
(1990).
42.ˇ°The stability of electron irradiation transistorˇ±, Z. A. Wang, S. X. Jin,
Semiconductor of technique (China) (6) 30-34(1988).
43.ˇ°A method for measuring carrier capture cross section of deep centers with eliminating
the influence of in homogeneous carrier distributionˇ±, K. M. Chen, G. G. Qin, Z. A. Wang,
S. X. Jin, Acta Physica Sinica (China), 33, (4), 486-495 (1984).
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