APL  JAP  APR 
APSJs

Real Time Citation Links: 

 Hongxing Jiang   ResearcherID Google Scholar 

 Jingyu Lin            ResearcherID Google Scholar

         Publication List:

        Notice: The distribution and use of the following published papers are subject to the specific copyright rules set by different conferences and journals.  * indicate proceeding papers




          ————     Year 2021
  1.   S. J. Grenadier, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical Transport Properties of Hexagonal Boron Nitride Epilayers,” Chapter 12 in “Ultrawide Bandgap Semiconductors,” Volume 107 in SEMICONDUCTORS AND SEMIMETALS (2021). ISBN: 0080-8784.  doi: 10.1016/bs.semsem.2021.04.008 

  2.   H. X. Jiang and J. Y. Lin, “Development of nitride microLEDs and displays,” Chapter 1 in “Micro LEDs,” Volume 106 in SEMICONDUCTORS AND SEMIMETALS, edited by H. X. Jiang and J. Y. Lin, Academic Press (an imprint of Elsevier), 1st Edition (2021). ISBN: 9780128230411.  Elsevier

  3.   H. X. Jiang and J. Y. Lin, “Micro LEDs,” Volume 106 in SEMICONDUCTORS AND SEMIMETALS, edited by H. X. Jiang and J. Y. Lin, Academic Press, Hardcover ISBN: 9780128230411, 1st Edition, June (2021). ISBN: 9780128230411.  Elsevier

  4.   M. A. McKay, H. A. Al-Atabi, J. Li, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Band structure and ultraviolet optical transitions in ErN,” Appl. Phys. Lett. 118, 131108 (2021).  doi: 10.1063/5.0046580 Ι PDF

  5.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride: Epitaxial growth and device applications,” Prog. Quantum. Electron. 76 100302 (2021).  doi: 10.1016/j.pquantelec.2020.100302 Ι PDF

  6.   J. Li, A. Maity, S. J. Grenadier, J. Y. Lin, and H. X. Jiang, “Charge collection in h-BN neutron detectors at elevated temperatures," Appl. Phys. Lett. 118, 092102 (2021).  doi: 10.1063/5.0044159 Ι PDF



  7.       ————     Year 2020
  8.   H. X. Jiang, J. Y. Lin, Jing Li, A. Maity, and S. J. Grenadier, “Solid-state neutron detectors,” US Patent 10,714,651 B2 (2020).  PDF

  9.   Y. Q. Yan, T. B. Smith, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium energy levels in GaN grown by hydride vapor phase epitaxy,” AIP Advances 10, 125006 (2020).  doi: 10.1063/5.0028470 Ι PDF

  10.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells,” Chapter 20 in “Wide Bandgap Semiconductor-Based Electronics,” edited by Fan Ren and Stephen J Pearton, IOP Publishing, Bristol, UK (2020). PDF

  11.   Z. Y. Sun, H. L. Gong, Y. Q. Yan, T. B. Smith, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization-resolved Er emission in Er doped GaN bulk crystals,” J. Appl. Phys. 127, 243107 (2020).  doi: 10.1063/5.0012969 Ι PDF

  12.   M. A. McKay, Q. W. Wang, H. A. Al-Atabi, Y. Q. Yan, J. Li, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Band structure and infrared optical transitions in ErN,” Appl. Phys. Lett. 116, 171104 (2020).  doi: 10.1063/5.0006312 Ι PDF

  13.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “High efficiency hexagonal boron nitride neutron detectors with 1 cm2 detection areas,” Appl. Phys. Lett. 116, 142102 (2020).  doi: 10.1063/1.5143808 Ι PDF

  14.   J. Y. Lin and H. X. Jiang, “Development of microLED,” Appl. Phys. Lett. 116, 100502 (2020).  doi: 10.1063/1.5145201 Ι PDF

  15.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Probing the surface oxidation process in hexagonal boron nitride epilayers,” AIP Advances 10, 025213 (2020).  doi: 10.1063/1.5134993 Ι PDF

  16.   V. X. Ho, Y. Wang, B. Ryan, L. Patrick, H. X. Jiang, J. Y. Lin, and N. Q. Vinh, “Observation of optical gain in Er-Doped GaN epilayers,” J. Lumin. 221, 117090 (2020).  doi: 10.1016/j.jlumin.2020.117090 Ι PDF

  17.   M. A. McKay, J. Li, J. Y. Lin, and H. X. Jiang, “Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry,” J. Appl. Phys. 127, 0531032 (2020).  doi: 10.1063/1.5134908 Ι PDF

  18.   B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara, “Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology,” J. Appl. Phys. 127, 013102 (2020).  doi: 10.1063/1.5134050 Ι PDF


  19.           ————     Year 2019

  20.   S. J. Grenadier, A. Maity, J. Li , J. Y. Lin , and H. X. Jiang, “Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers,” Appl. Phys. Lett. 115, 072108 (2019).  doi: 10.1063/1.5097984 Ι PDF

  21.   Y. Q. Yan , Z. Y. Sun, W. P. Zhao, J. Li , J. Y. Lin , and H. X. Jiang, “Optical properties of GaN/Er:GaN/GaN core–cladding planar waveguides,” Appl. Phys. Expr. 12, 075505 (2019).  doi: 10.7567/1882-0786/ab2730 Ι PDF

  22.   Z. Y. Sun, Y. Q. Yan , T. B. Smith, W. P. Zhao, J. Li , J. Y. Lin , and H. X. Jiang, “Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides,” Appl. Phys. Lett. 114, 222105 (2019).  doi: 10.1063/1.5093942 Ι PDF

  23.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “High sensitivity hexagonal boron nitride lateral neutron detectors,” Appl. Phys. Lett. 114, 222102 (2019).  doi: 10.1063/1.5098331 Ι PDF

  24.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Critical thickness of hexagonal GaBN/BN heterostructures,” J. Appl. Phys. 125, 205703 (2019).  doi: 10.1063/1.5098796 Ι PDF

  25.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of surface recombination on the charge collection in h-BN neutron detectors,” J. Appl. Phys. 125, 104501 (2019).  doi: 10.1063/1.5089138 Ι PDF

  26.   Q. W. Wang, M. R. Uddin, X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells,” Appl. Phys. Expr. 12, 011002 (2019).  doi: 10.7567/1882-0786/aaee8d Ι PDF


  27.           ————     Year 2018

  28.   Z. Y. Sun, Y. Q. Yan, W. P. Zhao, J. Li, J. Y. Lin, and H. X. Jiang, “Resonant excitation cross-sections of erbium in freestanding GaN bulk crystals,” Appl. Phys. Lett. 112, 202103 (2018).  doi: 10.1063/1.5030347 Ι PDF

  29.   S. J. Grenadier, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Origin and roles of oxygen impurities in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 112, 162103 (2018).  doi: 10.1063/1.5026291 Ι PDF

  30.  * Z. Y. Sun, Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium-doped GaN bulk crystals as a gain medium for eye-safe high energy lasers,” Proc. SPIE 10528, Optical Components and Materials XV, 105280E (2018); invited.   doi: 10.1117/12.2293166 Ι PDF

  31.   V. X. Ho, T. M. Al tahtamouni, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region,” ACS Photonics 5, 1303 (2018).  doi: 10.1021/acsphotonics.7b01253 Ι PDF

  32.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride neutron detectors with high detection efficiencies,” J. Appl. Phys. 123, 044501 (2018).  doi: 10.1063/1.5017979 Ι PDF

  33.           ————     Year 2017


  34.   X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111, 132106 (2017).  doi: 10.1063/1.4994070 Ι PDF

  35.  * A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “High-efficiency and high-sensitivity thermal neutron detectors based on hexagonal BN epilayers,” Proc. SPIE 10392, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX, 103920L (2017). doi: 10.1117/12.2271556 Ι PDF

  36.   S. Liu, R. He, Z. Ye, X. Z. Du, J. Y. Lin, H. X. Jiang, B. Liu, and J. H. Edgar, “Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe−Cr Flux,” Cryst. Growth Des. 17, 4932 (2017).  doi: 10.1021/acs.cgd.7b00871 Ι PDF

  37.   Z. Y. Sun, L. C. Tung, W. P. Zhao, J. Li, J. Y. Lin, and H. X. Jiang, “Excitation and emission mechanisms of Er:GaN gain medium in 1.5 µm region,” Appl. Phys. Lett. 111, 072109 (2017).  doi: 10.1063/1.4985726 Ι PDF

  38.   J. Yang, F. Ren, R. Khanna, K. Bevlin, D. Geerpuram, L-C. Tung, J. Y. Lin, H. X. Jiang, J. Lee, E. Flitsiyan, L. Chernyak, S. J. Pearton, and A. Kuramata, “Annealing of dry etch damage in metallized and bare (-201) Ga2O3,” J. Vac. Sci. Technol. B 35, 051201 (2017).  doi: 10.1116/1.4986300 Ι PDF

  39.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors,” Appl. Phys. Lett. 111, 033507 (2017).  doi: 10.1063/1.4995399 Ι PDF

  40.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Response of alpha particles in hexagonal boron nitride neutron detectors,” Appl. Phys. Lett. 110, 213502 (2017).  doi: 10.1063/1.4984112 Ι PDF

  41.   M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Probing carbon impurities in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 110, 182107 (2017).  doi: 10.1063/1.4982647 Ι PDF

  42.   X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110, 092102 (2017).  doi: 10.1063/1.4977425 Ι PDF

  43.   S. Butler, H. X. Jiang, J. Y. Lin, and A. Neogi, “Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity,” Advanced Optical Materials, 1600804 (2017).  doi: 10.1002/adom.201600804 Ι PDF

  44.   V. X. Ho, S. P. Dail, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD,” MRS Advances, 2, 135 (2017).  doi: 10.1557/adv.2017.27 Ι PDF

  45.   V. X. Ho, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, S. A. McGill, and N. Q. Vinh, “Photoluminescence quantum efficiency of Er optical centers in GaN epilayers,” Nature Scientific Reports 7, 39997 (2017).  doi: 10.1038/srep39997 Ι PDF

  46.   H. X. Jiang and J. Y. Lin, “Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications,” ECS J. Solid State Sci. Technol. 6, Q3012 (2017).  doi: 10.1149/2.0031702jss Ι PDF

  47.  ————     Year 2016

  48.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Enhancement of 1.5 μm emission under 980nm resonant excitation in Er and Yb co-doped GaN epilayers,” Appl. Phys. Lett. 109, 152103 (2016).  doi: 10.1063/1.4964843 Ι PDF

  49.   T. M. Al tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, “Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells,” Optical Materials Express 6, 3476 (2016).  doi: 10.1364/OME.6.003476 Ι PDF

  50.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy,” Appl. Phys. Lett. 109, 122101 (2016).  doi: 10.1063/1.4963128 Ι PDF

  51.  * T. C. Doan, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Thermal neutron detectors based on hexagonal boron nitride epilayers,” Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680S (2016); invited.   doi:10.1117/12.2239079 Ι PDF

  52.   A. Maity, T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Realization of highly efficient hexagonal boron nitride neutron detectors,” Appl. Phys. Lett. 109, 072101 (2016).  doi: 10.1063/1.4960522 Ι PDF Ι News

  53.   Z. Y. Sun, J. Li, W. P. Zhao, J. Y. Lin, and H. X. Jiang, “Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers,” Appl. Phys. Lett. 109, 052101 (2016).  doi: 10.1063/1.4960360 Ι PDF

  54.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors,” AIP Advances 6, 075213 (2016).  doi: 10.1063/1.4959595 Ι PDF

  55.  * D. K. George, M. D. Hawkins, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Optical excitation of Er centers in GaN epilayers grown by MOCVD,” Proc. SPIE 9744, Optical Components and Materials XIII, 97440V (2016); invited.  doi: 10.1117/12.2209695 Ι PDF

  56. N. Napal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, and J. M. Zavada, "MOCVD growth of Er-doped III-N and optical-magnetic characterization," Chapter 7 in "Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics," edited by V. Dierolf, I. T. Ferguson, and J. M. Zavada, Woodhead Publishing, Elsevier, 2016, pp. 225-255.

  57.   J. Li, X. K. Cao, T. B. Hoffman, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Nature of exciton transitions in hexagonal boron nitride,” Appl. Phys. Lett. 108, 122101 (2016).  doi: 10.1063/1.4944696 Ι PDF

  58.   X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108, 052106 (2016).  doi: 10.1063/1.4941540 Ι PDF

  59.  ————     Year 2015

  60.  * H. X. Jiang and J. Y. Lin, “InGaN/GaN multiple quantum well solar cells for energy and hydrogen generation,” ECS Transactions 66, 129 (2015); invited.  doi: 10.1149/06601.0129ecst Ι PDF

  61.   D. K. George, M. D. Hawkins, M. McLaren, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Excitation mechanisms of Er optical centers in GaN epilayers,” Appl. Phys. Lett. 107, 171105 (2015).   doi: 10.1063/1.4934760 Ι PDF

  62.   M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Carbon-rich hexagonal (BN)C alloys,” J. Appl. Phys. 117, 215703 (2015).   doi: 10.1063/1.4921931 Ι PDF

  63.   A. T. Connie, S. Zhao, S. Md. Sadaf, I. Shih, Z. Mi, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy,” Appl. Phys. Lett. 106, 213105 (2015).  doi: 10.1063/1.4921626 Ι PDF

  64.   J. H. Seo, J. Li, J. Lee, S. Gong, J. Y. Lin, H. X. Jiang, and Z. Ma, “A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate,” IEEE Photonics Journal, 7, 8200207 (2015).   doi: 10.1109/JPHOT.2015.2412459 Ι PDF

  65.   T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106, 121106 (2015).  doi: 10.1063/1.4916393 Ι PDF

  66.   T. C. Doan, S. Majety, S. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products,” Nuclear Inst. and Methods in Physics Research Section A 783, 121 (2015).  doi: 10.1016/j.nima.2015.02.045 Ι PDF

  67.   T. M. Al tahtamouni, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition,” Optical Materials Express 5, 648 (2015).  doi: 10.1364/OME.5.000648 Ι PDF

  68.   D. W. Jeon, Z. Y. Sun, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium doped GaN synthesized by hydride vapor-phase epitaxy,” Optical Materials Express 5, 596 (2015).  doi: 10.1364/OME.5.000596 Ι PDF

  69.   T. M. Al tahtamouni, X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Optical Materials Express 5, 274 (2015).  doi: 10.1364/OME.5.000274 Ι PDF

  70.   X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106, 021110 (2015).  doi: 10.1063/1.4905908 Ι PDF

  71.   T. N. Oder, J. Y. Lin, and H. X. Jiang, "III-nitride photonics crystals for lighting applications," Chapter 6 in "Handbook of Microcavities", Pan Stanford Publishing, 2015, ISBN 978-981-4463-24-9 (Hardcover), 978-981-4463-25-6 (ebook).

  72.  ————     Year 2014

  73.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Charge carrier transport properties in layer structured hexagonal boron nitride,” AIP Advances 4, 107126 (2014).  doi: 10.1063/1.4898630 Ι PDF

  74.   M. R. Uddin, T. C. Doan, J. Li, K. S. Ziemer, J. Y. Lin, and H. X. Jiang, “Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys,” AIP Advances 4, 087141 (2014).  doi: 10.1063/1.4894451 Ι PDF

  75.   S. Alajlouni, Z. Y. Sun, J. Li, J. M. Zavada, J. Y. Lin, and H. X. Jiang, “Refractive index of erbium doped GaN thin films,” Appl. Phys. Lett. 105, 081104 (2014).  doi: 10.1063/1.4893992 Ι PDF

  76.  R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980nm optical pumping,” Appl. Phys. Lett. 105, 051106 (2014).  doi: 10.1063/1.4892427 Ι PDF

  77.  M. Stachowicz, A. Kozanecki, C. -G. Ma, M. G. Brik, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Crystal field analysis of rare-earth ions energy levels in GaN,” Optical Materials 37, 165 (2014).  doi: 10.1016/j.optmat.2014.05.018 Ι PDF

  78.  J. H. Edgar, T. B. Hoffman, B. Clubine, M. Currie, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique,” J. Crystal Growth 403, 110 (2014).  doi: 10.1016/j.jcrysgro.2014.06.006 Ι PDF

  79.  H. X. Jiang, and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” (in special section "Deep UV LEDs", Guest editors: Jung Han, Hiroshi Amano and Leo Scholwalter), Semicon. Sci. Technol. 29, 084003 (2014), Invited reviewdoi: 10.1088/0268-1242/29/8/084003 Ι PDF

  80.   L. B. Tang, R. B. Ji, X. M. Li, G. X. Bai, C. P. Liu, J. H. Hao, J. Y. Lin, H. X. Jiang, K. S. Teng, Z. B. Yang, and S. P. Lau, “Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N‑Doped Graphene Quantum Dots,” ACS NANO 8, 6312 (2014).  doi: 10.1021/nn501796r Ι PDF

  81.   Q. Wang, S. Zhao, A. T. Connie, I. Shih, Z. Mi, T. Gonzalez, M. P. Andrews, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates,” Appl. Phys. Lett. 104, 223107 (2014).  doi: 10.1063/1.4881558 Ι PDF

  82.   T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes,” AIP Advances 4, 047122 (2014).  doi: 10.1063/1.4871996 Ι PDF

  83.   R. Dahal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis,” Appl. Phys. Lett. 104, 143901 (2014).  doi: 10.1063/1.4871105 Ι PDF

  84.   M. Stachowicz, A. Kozanecki, J. Y. Lin, H. X. Jiang, and J. Zavada, “Probing of local alloy disorder in InGaN using Er3+ ions,” Optical Materials 36, 1730 (2014).  doi: 10.1016/j.optmat.2014.02.013 Ι PDF

  85.   M. R. Uddin, S. Majety, J. Li, J. Y. Lin, and H. X. Jiang, “Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties,” J. Appl. Phys. 115, 093509 (2014).  doi: 10.1063/1.4867641 Ι PDF

  86.   T. C. Doan, S. Majety, S. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers,” Nuclear Inst. and Methods in Physics Research Section A 748, 84 (2014).  doi: 10.1016/j.nima.2014.02.031 Ι PDF

  87.   X. Z. Du, C. D. Frye, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence ,” J. Appl. Phys. 115, 053503 (2014).  doi:10.1063/1.4863823 Ι PDF

  88.  ————     Year 2013

  89.   S. Majety, T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical transport properties of Si-doped hexagonal boron nitride epilayers,” AIP Advances 3, 122116 (2013).  doi:10.1063/1.4860949 Ι PDF

  90.   X. K. Cao, B. Clubine, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Two-dimensional excitons in three-dimensional hexagonal boron nitride,” Appl. Phys. Lett. 103, 191106 (2013).  doi:10.1063/1.4829026 Ι PDF

  91.   S. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Dry etching techniques for active devices based on hexagonal boron nitride epilayers,” J. Vac. Sci. Technol. A 31, 061517 (2013).  doi:10.1116/1.4826363 Ι PDF

  92.   I. W. Feng, S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, “SiO2/TiO2 distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation,” J. Vac. Sci. Technol. A 31, 061514 (2013).  doi:10.1116/1.4823705 Ι PDF

  93.  I. W. Feng, W. P. Zhao, J. Li, J. Y. Lin, H. X. Jiang, and J. Zavada, “Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides,” Applied Optics 52, 5426 (2013).  doi:10.1364/AO.52.005426 Ι PDF

  94.  S. Majety, J. Li, W. P. Zhao, B. Huang, S. H. Wei, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride and 6H-SiC heterostructures,” Appl. Phys. Lett. 102, 213505(2013).  doi:10.1063/1.4808365 Ι PDF

  95.  H. X. Jiang and J. Y. Lin, “Nitride micro-LEDs and beyond - a decade progress review,”Optics Express 21, A475 (2013) (invited). doi:10.1364/OE.21.00A475 Ι PDF

  96.  T. Tong, D. Fu, A. X. Levander, W. J. Schaff, B. N. Pantha, N. Lu, B. Liu, I. Ferguson, R. Zhang, J. Y. Lin, H. X. Jiang, J. Wu, and David G. Cahill, “Suppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorder,” Appl. Phys. Lett. 102, 121906 (2013). doi:10.1063/1.4798838 Ι PDF

  97.  * X. K. Cao, S. Majety, J. Li, J. Y. Lin and H. X. Jiang, “Optoelectronic properties of hexagonal boron nitride epilayers,” Proc. SPIE 8631, 863128 (2013); invited.  doi:10.1117/12.2009115 Ι PDF

  98.  T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys.113, 123501 (2013). doi:10.1063/1.4798239 Ι PDF

  99.  I. W. Feng, Jing Li, J. Y. Lin, H. X. Jiang and J. Zavada, “Optical excitation cross section of erbium in GaN,” Applied Optics 52, 61132 (2013). doi:10.1364/AO.52.001132 Ι PDF

  100.  ————     Year 2012

  101.  T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang,“High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett.101, 192106 (2012). doi:10.1063/1.4766732 Ι PDF

  102.  * S. Majety, J. Li, X. K. Cao, R. Dahal, J. Y. Lin, H. X. Jiang,“Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers,” Proc. SPIE 8507, 85070R (2012). doi:10.1117/12.940748 Ι PDF

  103.  J. Li, S. Majety, R. Dahal, W. P. Zhao, J. Y. Lin, and H. X. Jiang, “Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers,” Appl. Phys. Lett. 101, 171112 (2012). doi:10.1063/1.4764533 Ι PDF

  104.  B. Huang, X. K. Cao, H. X. Jiang, J. Y. Lin, and S. H. Wei, “Origin of the significantly enhanced optical transitions in layered boron nitride,” Physical Review B 86, 155202 (2012). doi:10.1103/PhysRevB.86.155202 Ι PDF

  105.  I. W. Feng, J. Li, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition,” Optical Materials Express 2, 1095 (2012). doi:10.1364/OME.2.001095 Ι PDF

  106.  C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang and J. M. Zavada, “Formation energy of optically active Er3+ centers in Er doped GaN,” Appl. Phys. Lett. 101, 051114 (2012). doi:10.1063/1.4742196 Ι PDF

  107.  S. Majety, X. K. Cao, J. Li, R. Dahal, J. Y. Lin and H. X. Jiang, “Band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 101, 051110 (2012). doi:10.1063/1.4742194 Ι PDF

  108.  T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101, 042103 (2012). doi:10.1063/1.4737941 Ι PDF

  109.  L. B. Tang, R. B. Ji, X. K. Cao, J. Y. Lin, H. X. Jiang, X. M. Li, K. S. Teng, C. M. Luk, S. J. Zeng, J. H. Hao, and S. P. Lau, “Deep Ultraviolet Photoluminescence of Water-Soluble Self-Passivated Graphene Quantum Dots,” ACS Nano. 6, 5102 (2012). doi:10.1021/nn300760g Ι PDF

  110.  T. M. Al Tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, “Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates,” J. Phys. D: Appl. Phys. 45, 285103 (2012). doi:10.1088/0022-3727/45/28/285103 Ι PDF

  111.  A. Sedhain, J. Y. Lin, and H. X. Jiang, “Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN,” Appl. Phys. Lett. 100, 221107 (2012). doi:10.1063/1.4723693 Ι PDF

  112. * S. Majety, X. K. Cao, R. Dahal, B. N. Pantha, J. Li, J. Y. Lin and H. X. Jiang, “Semiconducting hexagonal boron nitride for deep ultraviolet photonics,” Proc. SPIE 8268, 82682R (2012). ; invited. doi:10.1117/12.914084 Ι PDF

  113. * J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin and H. X. Jiang, “Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays,” Proc. SPIE 8268, 82681X (2012). ; invited. doi:10.1117/12.914061 Ι PDF

  114. B. N. Pantha, J. Y. Lin, and H. X. Jiang, "High qaulity Al-rich AlGaN alloys," Chapter 2 in GaN and ZnO-based Materials and Devices, edited by S.J. Pearton, published in February 2012 by Springer, Springer Series in Materials Science (ISBN: 978-3-642-23520-7).

  115. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, "Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics," Appl. Phys. Lett. 100, 061121 (2012).doi:10.1063/1.3682523 Ι PDF

  116. M. L. Nakarmi, B. Cai, J. Y. Lin, and H. X. Jiang, "Three-step growth method for high quality AlN epilayers," Phys. Status Solidi A 209, No. 1, 126 (2012).doi:10.1002/pssa.201127475 Ι PDF

  117.  ————     Year 2011

  118. J. Y. Lin, J. Day, J. Li, D. Lie, C. Bradford, and H. X. Jiang, "High-resolution group III nitride microdisplays," SPIE Newsroom, Dec. issue (2011).doi: 10.1117/2.1201112.004001 Ι PDF

  119. N. T. Woodward, N. Nepal, B. Mitchell, I. W. Feng, J. Li, H. X. Jiang, J. Y. Lin, J. M. Zavada, and V. Dierolf,"Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields," Appl. Phys. Lett. 99, 122506 (2011). doi:10.1063/1.3643041 Ι PDF

  120. Q. Wang, R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui,"Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition ," Appl. Phys. Lett. 99, 121106 (2011). doi:10.1063/1.3636418 Ι PDF

  121. X. Wang, C. Timm, X. M. Wang, W. K. Chu, J. Y. Lin, H. X. Jiang and J. Z. Wu,"Metastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire," Journal of Superconductivity and Novel Magnetism 24, 2123 (2011). doi:10.1007/s10948-011-1165-x Ι PDF

  122. H.X. Jiang and J.Y. Lin, "Semiconductor lasers: Expanding into blue and green," Nature Photonics 5, 521 (2011). doi:10.1038/nphoton.2011.210 Ι PDF

  123. * K. Aryal, I. W. Feng, B. N. Pantha, J. Li, J. Y. Lin and H. X. Jiang,"Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications," MRS Proceedings 1325, mrss11-1325-e07-08 (2011). doi:10.1063/1.3643041 Ι PDF

  124. A. Konopka, S. Greulich-Weber, V. Dierolf, H. X. Jiang, U. Gerstmann, E. Rauls, S. Sanna and W.G. Schmidt, "Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors," Optical Materials 33, 1041 (2011). doi:10.1016/j.optmat.2010.12.005 Ι PDF

  125. B.N. Pantha, H. Wang, N.Khan, J.Y. Lin, and H.X. Jiang, "Origin of background electron concentration in InxGa1−xN alloys," Phys. Rev. B 84, 075327 (2011). doi:10.1103/PhysRevB.84.075327 Ι PDF

  126. J. Li, R. Dahal, S. Majety, J.Y. Lin, and H.X. Jiang, "Hexagonal boron nitride epitaxial layers as neutron detector materials," Nuclear Inst. and Methods in Physics Research Section A 654, 417 (2011). doi:10.1016/j.nima.2011.07.040 Ι PDF

  127. Jacob Day, J. Li, D.Y.C. Lie, Charles Bradford, J.Y. Lin, and H.X. Jiang, "III-Nitride full-scale high-resolution microdisplays," Appl. Phys. Lett. 99, 031116 (2011). doi:10.1063/1.3615679 Ι PDF

  128. R. Dahal, J. Li, S. Majety, B.N. Pantha, X.K. Cao, J.Y. Lin, and H.X. Jiang, "Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material," Appl. Phys. Lett. 98, 211110 (2011). doi:10.1063/1.3593958 Ι PDF (also selected by Virtual Journal of Nanoscale Science & Technology under Graphene, Carbon Nanotubes, C60, and related studies)

  129. A. Sedhain, J.Y. Lin, and H.X. Jiang, "AlN - properties and applications," Chapter 3 in "Handbook of Luminesent semiconductor materials," edited by L. Bergman and J.L. McHale, published by CRC Press (Boca Raton 2011).

  130. B.N. Pantha, I.W. Feng, K. Aryal, J. Li, J.Y. Lin, and H.X. Jiang, "Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials," Appl. Phys. Express. 4, 051001(2011). doi:10.1143/APEX.4.051001 Ι PDF

  131. I.W. Feng, X.K. Cao, J. Li, J.Y. Lin, H.X. Jiang, N. Sawaki, Y. Honda, T. Tanikawa, and J. M. Zavada, "Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates," Appl. Phys. Lett. 98 081102 (2011). doi:10.1063/1.3556678 Ι PDF

  132. R. Dahal, J.Y. Lin, H.X. Jiang and J.M. Zavada, "Near infrared photonic devices based on Er-doped GaN and InGaN," Optical Materials, 33, 1066 (2011). doi:10.1016/j.optmat.2010.10.002 Ι PDF

  133. N. Woodwarda, V. Dierolfa, J.Y. Lin, H.X. Jiang and J.M. Zavada, "Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers," Optical Materials, 33,1059 (2011). doi:10.1016/j.optmat.2010.07.007 Ι PDF

  134.  ————     Year 2010

  135. J. Li, J. Y. Lin, H. X. Jiang, and N. Sawaki, "III-Nitrides on Si Substrates," Chapter 3 in III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, edited by T. Li, M. Mastro and A. Dadgar, published by CRC Press (Boca Raton 2010).

  136. Q. Wang, R. Hui, R. Dahal, J.Y. Lin and H.X. Jiang, "Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength," Appl. Phys. Lett. 97, 241105 (2010). doi:10.1063/1.3527089 Ι PDF

  137. R. Dahal, C. Ugolini, J.Y. Lin, H.X. Jiang and J.M. Zavada, "1.54 μm emitters based on erbium doped InGaN p-i-n junctions," Appl. Phys. Lett. 97, 141109, (2010). doi:10.1063/1.3499654 Ι PDF

  138. R. Dahal, J. Y. Lin, H. X. Jiang, and J. Zavada "Er doped InxGa1-xN for optical communications," Chapter 5 in Rare-earth doped III-Nitrides for Optoelectronic and Spintronic Applications, edited by K O’Donnell & V Dierolf, published by Canopus Academic Publishing Ltd and Springer SBM (2010). doi:10.1007/978-90-481-2877-8_5

  139. R. Dahal, J. Li, K. Aryal, J. Y. Lin, and H. X. Jiang, "InGaN/GaN multiple quantum well concentrator solar cells," Appl. Phys. Lett. 97, 073115 (2010). doi:10.1063/1.3481424 Ι PDF

  140. B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, "Evolution of phase separation in In-rich InGaN alloys," Appl. Phys. Lett. 96, 232105 (2010). doi:10.1063/1.3453563 Ι PDF

  141. B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, "Probing the relationship between structural and optical properties of Si-doped AlN," Appl. Phys. Lett. 96, 131906 (2010). doi:10.1063/1.3374444 Ι PDF

  142. A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, "Nature of deep center emissions in GaN," Appl. Phys. Lett. 96, 151902 (2010). doi:10.1063/1.3389497 Ι PDF

  143. I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, "Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers," Appl. Phys. Lett. 96, 031908 (2010). doi:10.1063/1.3295705 Ι PDF

  144. K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, "Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells," Appl. Phys. Lett. 96, 052110 (2010). doi:10.1063/1.3304786 Ι PDF

  145. * B N. Pantha, J. Y. Lin, and H. X. Jiang, “III-nitride nanostructures for energy generation,” Proc. SPIE 7608, 76081I (2010). ; invited. doi:10.1117/12.840726 Ι PDF

  146. * B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Achieving p-InxGa1-xN alloys with high In contents,” Proc. SPIE 7602, 76020Z (2010). doi:10.1117/12.842313 Ι PDF

  147. * R. Dahal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 µm emitter and optical amplifier based on Er doped InGaN/GaN,” Proc. SPIE 7598, 759819 (2010). doi:10.1117/12.842325 Ι PDF

  148.  ————     Year 2009

  149. A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y.M. Chong, W.J. Zhang, R. Dahal, J.Y. Lin, H.X. Jiang, H.A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J.C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J.F. Hochedezm, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond & Related Materials, 18, 860 (2009). doi:10.1016/j.diamond.2008.11.013 Ι PDF

  150. B. Giordanengo, A. Ben Moussa, J.-F. Hochedez, A. Soltani, P. de Moor, K. Minoglou, P. Malinowski, J.-Y. Duboz, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin and and H.X. Jiang, “Recent Rob developments on wide bandgap based uv sensors,” EAS Publications Series, 37, 199 (2009). [Astrophysics Detector Workshop 2008] doi:10.1051/eas/0937025 Ι PDF

  151. A. Sedhain, L. Du, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates,” Appl. Phys. Lett. 95, 262104 (2009). doi:10.1063/1.3276567 Ι PDF

  152. B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical and optical properties of p-type InGaN,” Appl. Phys. Lett. 95, 261904 (2009). doi:10.1063/1.3279149 Ι PDF

  153. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 µm,” Appl. Phys. Lett. 95, 111109 (2009). doi:10.1063/1.3224203 Ι PDF

  154. A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Probing exciton-phonon interaction in AlN epilayers by photoluminescence,” Appl. Phys. Lett. 95, 061106 (2009). doi:10.1063/1.3206672 Ι PDF

  155. S. Nikishin, B. Borisov, M. Pandikunta, R. Dahal, J. Y. Lin, H. X. Jiang, H. Harris, and M. Holtz, “High quality AlN for deep UV photodetectors,” Appl. Phys. Lett. 95, 054101 (2009). doi:10.1063/1.3200229 Ι PDF

  156. A. Sedhain, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Photoluminescence properties of erbium doped InGaN epilayers,” Appl. Phys. Lett. 95, 041113 (2009). doi:10.1063/1.3193532 Ι PDF

  157. N. Nepal, J. M. Zavada, R. Dahal, C. Ugolini, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers,” Appl. Phys. Lett. 95, 022510 (2009). doi:10.1063/1.3176972 Ι PDF

  158. X. H. Ji, Q. Y. Zhang, S. P. Lau, H. X. Jiang, and J. Y. Lin, “Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays,” Appl. Phys. Lett. 94, 173106 (2009). doi:10.1063/1.3126055 Ι PDF

  159. N. Nepal, J. M. Zavada, D. S. Lee, A. J. Steckl, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys,” Appl. Phys. Lett. 94, 111103 (2009). doi:10.1063/1.3097808 Ι PDF

  160. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys,” Appl. Phys. Lett. 94, 091903 (2009). doi:10.1063/1.3094754 Ι PDF

  161. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94, 063505 (2009). doi:10.1063/1.3081123 Ι PDF

  162. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang and G. Pomrenke, “Thermoelectric Properties of In0.3Ga0.7N Alloys”,  JEM (2009). doi:10.1007/s11664-009-0676-8 Ι PDF

  163.  ————     Year 2008

  164. Z. Y. Fan, J. Y. Lin and H. X. Jiang,"III-nitride micro-emitter arrays: development and applications," J. Phys. D: Appl. Phys. 41, 094001 (2008). doi:10.1088/0022-3727/41/9/094001 Ι PDF

  165. B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93, 182107 (2008). doi:10.1063/1.3006432 Ι PDF

  166. J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93, 162107 (2008). doi:10.1063/1.3006332 Ι PDF

  167. J. Liu, J. Li, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays”, J. Phys. Chem. C, 112, 17127 (2008). doi:10.1021/jp8060653 Ι PDF

  168. A. Sedhain, T. M. Al Tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, “Beryllium acceptor binding energy in AlN,” Appl. Phys. Lett. 93, 141104 (2008). doi:10.1063/1.2996977 Ι PDF

  169. A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, Z. Gu, and J. H. Edgar, “Photoluminescence properties of AlN homoepilayers with different orientations,” Appl. Phys. Lett. 93, 041905 (2008). doi:10.1063/1.2965613 Ι PDF

  170. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Current-injected 1.54  µm light emitting diodes based on erbium-doped GaN,” Appl. Phys. Lett. 93, 033502 (2008). doi:10.1063/1.2955834 Ι PDF

  171. N. Khan, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “High mobility InN epilayers grown on AlN epilayer templates,” Appl. Phys. Lett. 92, 172101 (2008). doi:10.1063/1.2917473 Ι PDF

  172. T. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang, “Growth and optical properties of a-plane AlN and Al rich AlN/AlxGa1-xN quantum wells grown on r-plane sapphire substrates”, phys. stat. sol. (c), 5, 1568 (2008). doi:10.1002/pssc.200778491 Ι PDF

  173. R. Dahal, J. Li, Z. Y. Fan, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang, “AlN MSM and Schottky photodetectors”, phys. stat. sol. (c), 5,2148, (2008). doi:10.1002/pssc.200778489 Ι PDF

  174. T. M. Al tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant,” Appl. Phys. Lett. 92, 092105 (2008). doi:10.1063/1.2890416 Ι PDF

  175. A. Sedhain, J. Y. Lin, and H. X. Jiang, “Valence band structure of AlN probed by photoluminescence,” Appl. Phys. Lett. 92, 041114 (2008). doi:10.1063/1.2840176 Ι PDF

  176. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke, “Thermoelectric properties of InxGa1−xN alloys,” Appl. Phys. Lett. 92, 042112 (2008). doi: 10.1063/1.2839309 Ι PDF

  177. A. BenMoussa, J. F. Hochedez, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, A. Soltani, J.-C. De Jaeger, U. Kroth, and M. Richter, “Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments,” Appl. Phys. Lett. 92, 022108 (2008). doi:10.1063/1.2834701 Ι PDF

  178. K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J.Y. Lin, H.X. Jiang , J. Zavada, “Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er”, Materials Science and Engineering B 146, 193 (2008). doi:10.1016/j.mseb.2007.07.032 Ι PDF

  179.  ————     Year 2007

  180. R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang , “AlN avalanche photodetectors,” Appl. Phys. Lett. 91, 243503 (2007). doi:10.1063/1.2823588 Ι PDF

  181. X. A. Cao, H. Piao, J. Li, J. Y. Lin, and H. X. Jiang, "Surface chemical and electronic properties of plasma-treated n-type Al0.5Ga0.5N," Phys. Stat. Sol. (a) 204, 3410 (2007). doi:10.1002/pssa.200723119 Ι PDF

  182. B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91, 121117 (2007). doi:10.1063/1.2789182 Ι PDF

  183. Fei Wang, Shu-Shen Li, Jian-Bai Xia, H. X. Jiang, J. Y. Lin, Jingbo Li, and Su-Huai Wei, “Effects of the wave function localization in AlInGaN quaternary alloys,” Appl. Phys. Lett. 91, 061125 (2007). doi:10.1063/1.2769958 Ι PDF

  184. J. M. Zavada, N. Nepal, C. Ugolini, J. Y. Lin, and H. X. Jiang et al, "Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition," Appl. Phys. Lett. 91, 054106 (2007). doi:10.1063/1.2767992 Ι PDF

  185. N. Khan, N. Nepal, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in InN epilayers probed by photoluminescence,” Appl. Phys. Lett. 91, 012101 (2007). doi:10.1063/1.2753537 Ι PDF

  186. R. Dahal, T. M. Al Tahtamouni, Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors,” Appl. Phys. Lett. 90, 263505 (2007). doi:10.1063/1.2752126 Ι PDF

  187. B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li, J. Y. Lin, H. X. Jiang, Q. S. Paduano, and David Weyburne, “Correlation between optoelectronic and structural properties and epilayer thickness of AlN,” Appl. Phys. Lett. 90, 241101 (2007). doi:10.1063/1.2747662 Ι PDF

  188. T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells,” Appl. Phys. Lett. 90, 221105 (2007). doi:10.1063/1.2743956 Ι PDF

  189. X. H. Ji, S. P. Lau, S. F. Yu, H. Y. Yang, T. S. Herng, A. Sedhain, J. Y. Lin, H. X. Jiang, K. S. Teng, and J. S. Chen, “Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods,” Appl. Phys. Lett. 90, 193118 (2007). doi:10.1063/1.2738370 Ι PDF

  190. * Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “Achieving conductive high Al-content AlGaN alloys for deep UV photonics,” Proc. SPIE 6479, 64791I (2007). doi:10.1117/12.715046

  191. C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,”Appl. Phys. Lett. 90, 051110(2007). doi:10.1063/1.2450641 Ι  PDF

  192. H. X. Jiang and J. Y. Lin, “III-Nitride Micro-Cavity Light-Emitters,” – in “Wide Bandgap Light-Emitting Materials and Devices,” edited by G.F. Neumark, I. Kuskovsky, and H. X. Jiang, published by Wiley –VCH Verlag GmbH, 2007.

  193.  ————     Year 2006

  194.  J. Li, Z. Y. Fan, R. Dahal, M. L Nakarmi, J. Y. Lin, and H. X. Jiang, “200  nm deep ultraviolet photodetectors based on AlN,”   Appl. Phys. Lett. 89, 213510 (2006). doi:10.1063/1.2397021 Ι PDF

  195. N. Nepal, M. L. Nakarmi, H. U. Jang, J. Y. Lin, and H. X. Jiang, "Growth and photoluminescence studies of Zn-doped AlN epilayers,"Appl. Phys. Lett. 89, 192111 (2006). doi: 10.1063/1.2387869 Ι PDF

  196. M. L. Nakarmi, N. Nepal, C. Ugolini, T. M. Al Tahtamouni, J. Y. Lin,and  H. X. Jiang,"Correlation between optical and electrical properties of Mg-doped AlN epilayers," Appl. Phys. Lett. 89, 152120 (2006). doi:10.1063/1.2362582 Ι PDF

  197. Z. M. Zavada, N.Nepal, J. Y. Lin, H. X. Jiang,E. Brown, U. Hommerich, J. Hite, G. T. Thaler, C. R. Abernathy, S. J. Pearton,and R. Gwilliam, "Ultraviolet photoluminescence from Gd-implanted AlN epilayers," Appl. Phys. Lett. 89, 152107 (2006). doi:10.1063/1.2357552 Ι PDF

  198. N. Khan and J. Li, "Effects of compressive strain on optical properties of InxGa1−xN/GaN quantum wells," Appl. Phys. Lett. 89, 151916 (2006). doi:10.1063/1.2362587 Ι PDF 

  199. C. Ugolini, N.Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada "Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition," Appl. Phys. Lett. 89, 151903 (2006). doi:10.1063/1.2362587 Ι PDF

  200. T. M. Al Tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang and W. W. Chow, "Growth and photoluminescence studies of Al-rich AlN/AlxGa1−xN quantum wells," Appl. Phys. Lett.89, 131922 (2006). doi:10.1063/1.2358107 Ι PDF

  201. N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Photoluminescence studies of impurity transitions in AlGaN alloys," Appl. Phys. Lett. 89, 092107 (2006). doi:10.1063/1.2337856 Ι PDF

  202. N. Nepal, K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy," Appl. Phys. Lett. 88, 261919 (2006).doi: 10.1063/1.2217160 Ι PDF

  203. X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, "Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN," Appl. Phys. Lett. 89, 082109 (2006). doi:10.1063/1.2338434 Ι PDF

  204. J. K. Kim , E. F. Schubert , J. Cho , C. Sone , J. Y. Lin , H. X. Jiang , and J. M. Zavada, "GaN light-emitting triodes for high-efficiency hole injection," J. Electrochem. Soc.153, G734 (2006). doi:10.1117/12.647453 Ι PDF

  205. T. N. Oder, P. Martin, J. Y. Lin, H. X. Jiang, J. R. Williams, and T. Isaacs-Smith, "Thermally stable Schottky contacts on n-type GaN using ZrB2," Appl. Phys. Lett. 88, 183505 (2006).doi:10.1063/1.2199611 Ι PDF

  206. J. Li, J. Y. Lin, and H. X. Jiang,"Growth of III-nitride photonic structures on large area silicon substrates," Appl. Phys. Lett. 88, 171909 (2006). doi:10.1063/1.2199492 Ι PDF

  207. * Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “III-nitride deep ultraviolet micro- and nano-photonics,” Proc. SPIE 6127, 61271C (2006), invited.

  208. N. Nepal, J. Shakya, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Deep ultraviolet photoluminescence studies of AlN photonic crystals," Appl. Phys. Lett. 88, 133113 (2006). doi:10.1063/1.2190452 Ι PDF

  209. * N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Time-resolved photoluminescence studies of Mg-doped AlN epilayers," Proc. SPIE, 6118, 61180E (2006). doi:10.1117/12.651856,invited.

  210. Z. Y. Fan, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers," Appl. Phys. Lett. 88, 073513 (2006). doi:10.1063/1.2174847 Ι PDF

  211. N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Exciton localization in AlGaN alloys," Appl. Phys. Lett. 88, 062103 (2006). doi:10.1063/1.2172728 Ι PDF

  212. A. N. Westmeyer, S. mahajan, K. K. Bajaj, J. Y. Lin, H. X. Jiang, D. D. Koleske, and R. T. Senger, "Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys," J. Appl. Phys. 99, 013705 (2006). doi:10.1063/1.2158492 Ι PDF

  213. * H. X. Jiang, C. Ugolini, J. Y. Lin, and J. Zavada, “III-nitride wide bandgap semiconductors for optical communications,” IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting, Vols 1 and 2, 36 (2006) 2006, invited.

  214.  ————     Year 2005

  215. G.D. Chen, Y. Z. Zhu, G. J. Yan, J. S.Yuan, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Time-resolved photoluminescence studies of indium-rich InGaN alloys,” CHINESE PHYSICS LETTERS 22, 472 (2005). doi: 10.1088/0256-307X/22/2/057 Ι PDF

  216. Hallbeck S, Caruso AN, Adenwalla S, Brand J, Byun DJ, Jiang HX, Lin JY, Losovyj YB, Lundstedt C, McIlroy DN, Pitts WK, Robertson BW, Dowben PA, “Comment on "Spectral identification of thin film coated and solid form semiconductor neutron detectors" by McGregor and Shultis,” Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment,536, 228 (2005). doi:10.1016/j.nima.2004.07.210 Ι PDF

  217.  N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Temperature and Compositional Dependence of the Energy Bandgap of AlGaN Alloys,” Appl. Phys. Lett. 87, 242104 (2005). doi:10.1063/1.2142333 Ι PDF

  218. N. Nepal, K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, "Carrier dynamics in AlN and GaN epilayers at the elevated temperatures,"Proc. SPIE, 5725, 119 (2005). doi:10.1117/12.590917

  219. R. Hui, Y. Wan, J. Li, S.X. Jin, J. Y. Lin, and H. X. Jiang, “III-nitride-based planar lightwave circuits for long wavelength optical communications,” IEEE J. Quantum Electronics 41, 100 (2005). doi:10.1109/JQE.2004.838169 Ι PDF

  220. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, "Unintentionally doped n-type Al0.67Ga0.33N epilayers" Appl. Phys. Lett.  86, 261902 (2005). doi:10.1063/1.1954875 Ι PDF

  221.  K. B. Nam, M. L. Nakarmi,  J. Y. Lin, and H. X. Jiang,"Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys" Appl. Phys. Lett.  86, 222108 (2005). doi:10.1063/1.1943489 Ι PDF

  222. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Nitride deep-ultraviolet light-emitting diodes with microlens array" Appl. Phys. Lett.  86, 173504 (2005). doi:10.1063/1.1914960 Ι PDF

  223. J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang , "Polarization of III-nitride blue and ultraviolet light-emitting diodes" Appl. Phys. Lett.  86, 091107 (2005). doi:10.1063/1.1875751 Ι PDF

  224.  M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin and H. X. Jiang, "Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys"Appl. Phys. Lett.  86, 092108 (2005). doi:10.1063/1.1879098 Ι PDF

  225. * J. Y. Lin, H. X. Jiang, and J. Zavada, “Nitride Photonic Crystals,” Eighth International Symposium on Contemporary Photonics Technology, Tokyo, Japan (January 2005), invited.

  226. * J. Y. Lin, and H. X. Jiang, “III-Nitride Ultraviolet Micro- and Nano-Photonics,” CLEO 2005 technical digest, Baltimore (May 2005), invited.

  227. * J.M. Zavada, Ei Ei Nyein, U. Hommerich, J., Li, J. Y. Lin, H. X. Jiang, P. Chow, and J. W. Dong, “Visible and IR emission from Er-doped III-N LEDs,” MRS Proceedings, 866, 59 (2005).

  228. B. Guo, Z. R. Qiu, J. Y. Lin, H. X. Jiang, and K. S. Wong, “Deep bandtail states picosecond intensity-dependent carrier dynamics of GaN epilayer under high excitation,” Appl. Phys. B – Laser and Optics 80, 521 (2005).

  229. B. Liu, J.H. Edgar, B. Raghothamachar, M. Dudley, J.Y. Lin, and H.X. Jiang, A. Sarua, M. Kuball, “Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation,” Materials Science and Engineering B - Solid State Materials for Advanced Technology 117, 99 (2005).

  230.  ————     Year 2004

  231.  K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers,” Appl. Phys. Lett.  85, 4777 (2004). doi:10.1063/1.1819506 Ι PDF

  232. K. Zhu, M. L. Nakarmi, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Silicon Doping Dependence of Highly Conductive n-type Al0.7Ga0.3N,” Appl. Phys. Lett.  85, 4669 (2004). doi:10.1063/1.1825055 Ι PDF

  233. * J. Shakya, K. H. Kim, T. N. Oder, J. Y. Lin, and H. X. Jiang, “III-nitride blue and UV photonic-crystal light-emitting diodes,” Proc. of SPIE Vol. 553-241(2004). doi:10.1117/12.565632 Ι PDF

  234. * M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin and H. X. Jiang, “Mg doped Al-rich AlGaN alloys for UV emitters,”  Proc. SPIE, 5530, 54 (2004). doi:10.1117/12.566192 Ι PDF

  235. * K.B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin and H. X. Jiang, “Time-resolved photoluminescence studies of Si & Mg-doped AlN epilayers,” Proc. SPIE (SPIE, Belingham, WA), 5352, 188 (2004). doi:10.1117/12.525752

  236.  L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar,C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Band-edge exciton states in AlN single crystals and epitaxial layers," Appl. Phys. Lett. 85, 4334 (2004).doi:10.1063/1.1818733 Ι PDF

  237. M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin, and H. X. Jiang, "Transport properties of highly conductive n-type Al-rich AlxGa1−xN  (x ≥ 0.7)," Appl. Phys. Lett. 85, 3769 (2004). doi:10.1063/1.1809272 Ι PDF

  238. K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, "Optical properties of AlN and GaN in elevated temperatures," Appl. Phys. Lett. 85, 3489 (2004). doi:10.1063/1.1806545 Ι PDF

  239. N. Nepal, M. L. Nakarmi, K. B. Nam, J. Y. Lin, and H. X. Jiang, "Acceptor-bound exciton transition in Mg-doped AlN epilayer," Appl. Phys. Lett. 85, 2271 (2004). doi:10.1063/1.1796521 Ι PDF

  240. J. Shakya, J. Y. Lin and H. X. Jiang, "Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes," Appl. Phys. Lett. 85, 2104 (2004). doi:10.1063/1.1786372 Ι PDF

  241. J. Shakya, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Enhanced Light Extraction in III-Nitride Ultraviolet Photonic Crystal Light-Emitting Diodes," Appl. Phys. Lett. 85, 142 (2004). doi:10.1063/1.1768297 Ι PDF

  242. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Unique optical properties of AlGaN alloys and related ultraviolet emitters," Appl. Phys. Lett. 84, 5264 (2004). doi:10.1063/1.1765208 Ι PDF

  243. W. Liang, K.T. Tsen, D.K. Ferry, K.H. Kim, J.Y. Lin, and H.X. Jiang, “Field-induced non-equilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN studied by subpicosecond Raman spectroscopy,” Semiconductor Science and Technology, 19, S427 (2004). doi:10.1088/0268-1242/19/4/140 Ι PDF

  244. * Y. Gong, Y. Gu, Igor L. Kuskovsky, G.F. Neumark, J. Li, J.Y. Lin, H.X. Jiang, and I. Ferguson, “Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition,” MRS Proceedings, 798, 491 (2004). doi:10.1557/PROC-798-Y5.16 Ι PDF

  245. * Z. Y. Fan, M.L. Nakarmi, J.Y. Lin, and H.X. Jiang, “Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AlN Epilayers,” MRS Proceedings 798, 101 (2004). doi: 10.1557/PROC-798-Y10.23

  246. * Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "Recent Advances in III-Nitride  UV Materials and Devices", State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II,Proceedings Volume 2004-02

  247. J. Shakya, J. Y. Lin and H. X. Jiang, "Near Field Optical Study of AlGaN/GaN Quantum Well Waveguide," Appl. Phys. Lett. 84 1832 (2004). doi:10.1063/1.1675936 Ι PDF

  248. C. H. Chen and Y. F. Chen, Z. H. Lan, L. C. Chen, and K. H. Chen, H. X. Jiang and J. Y. Lin, "Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary epilayers," Appl. Phys. Lett. 84 1480 (2004). doi:10.1063/1.1650549 Ι PDF

  249. Y. S. Park, K. H. Kim, J. J. Lee, H. S. Kim, T. W. Kang, H. X. Jiang, and J. Y. Lin, "X-ray diffraction analysis of the defect structure in AlxGa1−xN films grown by metal organic chemical vapor deposition," J. of Mater. Science 39, 1853(2004). doi:10.1023/B:JMSC.0000016202.96505.51 Ι PDF

  250. N. Nepal, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, J. M. Zavada, and R. G. Wilson, “Optical properties of the nitrogen vacancy in AlN epilayers,” Appl. Phys. Lett.84, 1090 (2004). doi:10.1063/1.1648137 Ι PDF

  251. J. M. Zavada, S. X. Jin, N. Nepal, J. Y. Lin, H. X. Jiang, P. Chow and B. Hertog, “Electroluminescent properties of erbium-doped III-N light emitting diodes,” Appl. Phys. Lett. 84, 1061 (2004). doi:10.1063/1.1647271 Ι PDF

  252. T. N. Oder, K. H. Kim, J. Y. Lin and H. X. Jiang, “III-Nitride Blue and Ultraviolet Photonic Crystal Light Emitting Diodes,” Appl.  Phys.  Lett.  84,  466 (2004). doi:10.1063/1.1644050 Ι PDF

  253. * W. Liang, K.T. Tsen, D.K. Ferry, K.H. Kim, J.Y. Lin, and H.X. Jiang, “Subpicosecond Raman studies of non-equilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN,” Proc. SPIE (SPIE, Belingham, WA), 5352, 404 (2004). doi:10.1117/12.528322 Ι PDF

  254. H. X. Jiang and J. Y. Lin, “Carrier Dynamics Probed by Time-Resolved Photoluminescence,”– in “Ultrafast Dynamics Processes in Semiconductors,” Book Volume 92 – Topics in Applied Physics, edited by K. T. Tsen, published by Springer-Verlag Berlin, (Berlin Heidelberger, 2004).

  255. H. X. Jiang & J. Y. Lin, "AlN Epitaxial Layers for UV Photonics" – Chapter 7 in Optoelectronic Devices: III-Nitride, edited by M. Razeghi and M. Heini, published by Elsevier Ltd. (Amsterdam, 2004).

  256. Shih-Wei Feng, Tsung-Yi Tang, Yen-Cheng Lu, Shi-Jiun Liu, En-Chiang Lin, C. C. Yang, Kung-Jen Ma,Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing,” J. Appl. Phys. 95, 5388 (2004). doi: 10.1063/1.1703828 Ι PDF

  257. D. Zhang, J. H. Edgar, B. Liu, H. E. Huey, H. X. Jiang, J. Y. Lin, M. Kuball, F. Mogal, J. Chaudhuri, and Z. Rek, “Bulk AlN growth by direct heating of the source using microwave,” J. Crystal Growth, 262 89 (2004). doi: 10.1016/j.jcrysgro.2003.10.080 Ι PDF

  258.  ————     Year 2003

  259. *J. Shakya, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “III-Nitride Photonic Crystals for Blue and UV Emitters,” Symposium Proceedings of Material Research Society Vol. 798, Y4.6.1 (2003). doi: 10.1557/PROC-798-Y4.6

  260.   H. X. Jiang, J. Y. Lin, R. Hui, and J. Zavada, “III-nitrides show promise for telecomm wavelengths,” Laser Focus World, Nov. issue (2003).  Link

  261. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Pierre Carrier, and Su-Huai Wei, "Band structure and fundamental optical transitions in wurtzite AlN," Appl. Phys. Lett. 83, 5163 (2003).  doi: 10.1063/1.1633965 Ι PDF

  262.  H. D. Sun, R. Macaluso, S. Calvez, M. D. Dawson, F. Robert, A. C. Bryce,J. H. Marsh, P. Gilet, L. Grenouillet, A. Million,K. B. Nam, J. Y. Lin, and H. X. Jiang,"Quantum well intermixing in GaInNAs/GaAs structures," J. Appl. Phys. 94, 7581 (2003).  doi: 10.1063/1.1627950 Ι PDF

  263.  Shih-Wei Feng, En-Chiang Lin, Tsung-Yi Tang, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,"Appl. Phys. Lett. 83, 3906 (2003).  doi: 10.1063/1.1625434 Ι PDF

  264.  R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang,J. Kelly, R. Rairigh, and A. F. Hebard, "Transition metal ion implantation into AlGaN,"J. Appl. Phys. 94, 4956 (2003).  doi: 10.1063/1.1613375 Ι PDF

  265.  K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, "Photoluminescence studies of Si-doped AlN epilayers,"Appl. Phys. Lett. 83, 2787 (2003).  doi: 10.1063/1.1616199 Ι PDF

  266.  R. Hui, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang," Birefringence of GaN/AlGaN optical waveguides,"Appl. Phys. Lett. 83, 1698 (2003).  doi: 10.1063/1.1606103 Ι PDF

  267. T. N. Oder, J. Shakya, J. Y. Lin, and H. X. Jiang, "III-nitride photonic crystals," Appl. Phys. Lett. 83, 1231 (2003).  doi: 10.1063/1.1600839 Ι PDF

  268. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, "Mg acceptor level in AlN probed by deep ultraviolet photoluminescence," Appl. Phys. Lett. 83, 878 (2003).  doi: 10.1063/1.1594833 Ι PDF

  269. R. M. Frazier, J. Stapleton, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. Rairigh, J. Kelly, A. F. Hebard, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. M. Zavada and R. G. Wilson, "Properties of Co-, Cr- or Mn-implanted AlN," J. Appl. Phys. 94, 1592 (2003).  doi: 10.1063/1.1586987 Ι PDF

  270. K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, "III-nitride ultraviolet light-emitting diodes with delta doping," Appl. Phys. Lett. 83, 566 (2003).  doi: 10.1063/1.1593212 Ι PDF

  271. Young Shin Park, Kun Ho Kim, Jeoung Ju Lee, Hyeon Soo Kim, Tae Won Kang, Hong Xing Jiang and Jing Yu Lin, "Defect Reduction in AlxGa1-xN Films Grown by Metal Organic Chemical Vapor Deposition," Jpn. J. Appl. Phys. 42, 1231 (2003).  doi: 10.1143/JJAP.42.1231 Ι PDF

  272. Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang, Y. Liu, J. A. Bardwell, J. B. Webb, and H. Tang, "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer," Symposium Proceedings of Materials Research Society, 743, 567 (2003).  doi: 10.1557/PROC-743-L9.11

  273. * K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Epitaxial growth and time-resolved photoluminescence studies of AlN epilayers," SPIE Proceedings, 4992, 202 (2003).  doi: 10.1117/12.479274 Ι PDF

  274. L. S. Yu, L. Jia, D. Qiao, S. S. Lau, J. Li, J. Y. Lin, and H. X. Jiang, "The origin of leaky characteristics of Schottky diode on p-GaN," IEEE Transaction on Electron Devices, 50, 292 (2003).  doi: 10.1109/TED.2002.808558 Ι PDF

  275. M. L. Nakarmi, K. H. Kim, J. Li, J. Y. Lin and H. X. Jiang, "Enhanced P-type Conductions in GaN and AlGaN by Mg-Delta-Doping," App. Phys. Lett. 82, 3041 (2003).  doi: 10.1063/1.1559444 Ι PDF

  276. T. N. Oder, J. Shakya, J. Y. Lin and H. X. Jiang "Nitride Microlens Arrays for Blue and UV Wavelength Applications," Appl. Phys. Lett. 82, 3692 (2003).  doi: 10.1063/1.1579872 Ι PDF

  277. H. X. Jiang and J. Y. Lin, "Advances in III-Nitride Microstructures and Micro-Size Emitters," J. of the Korean Physical Society, 42, S757 (2003). PDF

  278. J. Y. Lin and H. X. Jiang, "Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices," J. of the Korean Physical Society, 42, S535 (2003). PDF

  279. C. H. Chen, D. R. Hang, W. H. Chen, Y. F. Chen, H. X. Jiang and J. Y. Lin, “Persistent Photoconductivity in InxAlyGa1−x−yN quaternary alloys,” Appl. Phys. Lett. 82, 1884 (2003).  doi: 10.1063/1.1558959 Ι PDF

  280. K.B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, “Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers,” Appl. Phys. Lett. 82, 1694 (2003).  doi: 10.1063/1.1559659 Ι PDF

  281. W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Studies of field-induced non-equilibrium electron transport in an InxGa1-xN (x»0.6) epilayer grown on GaN,” Appl. Phys. Lett. 82, 1413 (2003).  doi: 10.1063/1.1556576 Ι PDF

  282. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Kung-Jeng Ma, Chih-Chiang Yan, Chen Hsu, J. Y. Lin, and H. X. Jiang, “Strong green luminescence in quaternary InAlGaN thin films,” Appl. Phys. Lett. 82, 1377 (2003).  doi: 10.1063/1.1556965 Ι PDF

  283. R. Hui, S. Taherion, Y. Wan, J. Li, S.X. Jin, J. Y. Lin, and H. X. Jiang, “GaN-based waveguide devices for long wavelength optical communications,” Appl. Phys. Lett. 82, 1326 (2003).  doi: 10.1063/1.1557790 Ι PDF

  284. * J. Y. Lin and H. X. Jiang, “III-Nitride Ultraviolet Photonic Materials – Epitaxial Growth, Optical and Electrical Properties, and Applications,” Proceedings of SPIE on Quantum Sensing, 4999, 287 (2003), inviteddoi: 10.1117/12.483961 Ι PDF

  285. H. X. Jiang & J. Y. Lin, “III-Nitride Quantum Devices – Microphotonics,” CRC Critical Reviews in Solid State and Materials Sciences, (P. Holloway, Editor), 28, 131 (2003), inviteddoi: 10.1080/10408430390802440

  286. J. M. Zavada, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog, U. Hömmerich, Ei Ei Nyein, and H. A. Jenkinson, “Synthesis and optical characterization of erbium-doped III-N double heterostructures,” Mater. Sci. Eng. B, Elsevier, B105, 118 (2003).  doi: 10.1016/j.mseb.2003.08.028 Ι PDF

  287. J. M. Zavada, R. G. Wilson, U. Hommerich, M. Thaik, J. T. Seo, C. J. Ellis, J. Y. Lin, and H. X. Jiang, “Compositional changes in Erbium-implanted GaN films due to Annealing,” Journal of Electronic Materials, 32, 382 (2003).  doi: 10.1007/s11664-003-0162-7 Ι PDF

  288.  ————     Year 2002

  289. J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Optical and Electrical Properties of Mg-doped p-type AlGaN," Appl. Phys. Lett. 80, 1210 (2002).  doi: 10.1063/1.1450038 Ι PDF

  290. Z. Y. Fan, J. Li, J. Y. Lin, and H. X. Jiang,"Delta-doped AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors with high breakdown voltages," Appl. Phys. Lett. 81, 4649 (2002).  doi: 10.1063/1.1527984 Ι PDF

  291. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Band-edge Photoluminescence of AlN Epilayers," Appl. Phys. Lett. 81, 3365 (2002).  doi: 10.1063/1.1518558 Ι PDF

  292. K.B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, "Growth and Optical Studies of Two-Dimensional Electron Gas of Al-rich AlGaN/GaN Heterostructures," Appl. Phys. Lett. 81, 1809 (2002).  doi: 10.1063/1.1504881 Ι PDF

  293. X. A. Cao, S. F. LoBoeuf, K. H. Kim, P. Sandvik, E. B. Stokes, A. Ebong, D. Walker, J. Kretchmer, J. Y. Lin, and H. X. Jiang, "Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes," Solid-State Electronics, 46, 2291 (2002).  doi: 10.1016/S0038-1101(02)00190-9 Ι PDF

  294. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Achieving highly conductive AlGaN alloys with high Al contents," Appl. Phys. Lett. 81, 1038 (2002).  doi: 10.1063/1.1492316 Ι PDF

  295. * T. N. Oder, J. Li, J. Y. Lin, and H. X. Jiang,"Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probed by time-resolved photoluminescence", Proceeding of SPIE 4643, 258 (2002).  doi: 10.1117/12.470430 Ι PDF

  296. * J. Li K. B. Nam, T. N. Oder, K. H. Kim, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Time-resolved photoluminescence studies of Al-rich AlGaN alloys",Proceeding of SPIE 4643 250 (2002).  doi: 10.1117/12.470429 Ι PDF

  297. H. X. Jiang, J. Y. Lin, and W. W. Chow “Time-Resolved Photoluminescence Studies of III-Nitrides,” Chapter 1 in "Optical Properties of III-Nitrides I" edited by M .O. Manasreh and H. X. Jiang, (Taylor & Francis Books, New York & London 2002).

  298. H. X. Jiang and J. Y. Lin, “AlGaN and InAlGaN Alloys – Epitaxial Growth, Optical and Electrical Properties, and Applications,” in a special issue of Opto-Electronics Review, 10, 271 (2002), invitedPDF

  299. M. E. Aumer, S. F. LeBoeuf, B. F. Moody, S. M. Bedair,K. Nam, J. Y. Lin, and H. X. Jiang"Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures", Appl. Phys. Lett. 80, 3099 (2002).  doi: 10.1063/1.1469219 Ι PDF

  300. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin and H. X. Jiang,"Exciton Luminescence Linewidth in AlGaN Alloys with High Aluminum Concentrations", Appl. Phys. Lett. 80, 2907 (2002).  doi: 10.1063/1.1471932 Ι PDF

  301. H. X. Jiang, J. Y. Lin, and W. W. Chow “Time-Resolved Photoluminescence Studies of III-Nitrides,” Chapter 1 in "Optical Properties of III-Nitrides I" edited by M .O. Manasreh and H. X. Jiang, (Taylor & Francis Books, New York & London 2002).

  302.  ————     Year 2001

  303. C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, "Mechanism of photoluminescence in GaN/AlGaN quantum wells", Appl. Phys. Lett. 79, 3806 (2001). doi: 10.1063/1.1420495 Ι PDF

  304. J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, "Optical and Electrical Properties of Al rich AlGaN Alloys," Appl. Phys. Lett. 79, 3245 (2001). doi: 10.1063/1.1418255 Ι PDF

  305. T.N. Oder, J.Y. Lin and H.X. Jiang, "Propagation properties of Light in AlGAN/GaN Quantum Well Waveguides," Appl. Phys. Lett. 79, 2511 (2001).  doi: 10.1063/1.1410359 Ι PDF

  306. D. R. Hang, C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, "AlGaN/GaN band offset determined by deep level emission," J. Appl. Phys. 90, 1887 (2001).  doi: 10.1063/1.1383259 Ι PDF

  307. Dai Lun, Zhang Bei, Lin Jingyu, and Jiang Hongxing, "Properties of optical resonant modes in III-Nitride semiconductor micro-cone cavities," Chinese Phys. Lett. 18, 437 (2001).  doi: 10.1088/0256-307X/18/3/343

  308. D. R. Hang, C. T. Liang, C. F. Huang, Y. H. Chang, Y. F. Chen, H. X. Jiang, and J. Y. Lin, “Effective mass of 2DEG in GaN/AlGaN heterostructure,” Appl. Phys. Lett. 79, 66 (2001).  doi: 10.1063/1.1380245 Ι PDF

  309. H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Micro-Size Light Emitters,” invited feature article for III-Vs Review, June/July 2001 issue.  doi: 10.1016/S0961-1290(01)80261-1 Ι PDF

  310. H. X. Jiang and J. Y. Lin, “Microdisplays Based on III-Nitride Wide Band Gap Semiconductors,” invited feature article for oe magazine (The Monthly Publication of SPIE-The internal Society for Optical Engineering), July 2001 issue. link

  311. T.N. Oder, J.Y. Lin and H.X. Jiang, “Fabrication and Optical Characterization of III-Nitride Sub-micron Waveguides,” Appl. Phys. Lett. 79, 12 (2001).  doi: 10.1063/1.1381037 Ι PDF

  312. C. H. Chen, Y. F. Chen, An Shih, S. C. Lee, and H. X. Jiang, “Zone-Folding effect on Optical Phonon in GaN/Al0.2Ga0.8N superlattices,” Appl. Phys. Lett. 78, 3035 (2001).  doi: 10.1063/1.1369389 Ι PDF

  313. S. X. Jin, J. Shakya, J. Y. Lin, and H. X. Jiang, “Size Dependence of III-Nitride Microdisk Light Emitting Diode Characteristics,” Appl. Phys. Lett. 78, 3532 (2001).  doi: 10.1063/1.1376152 Ι PDF

  314. L. Dai, B. Zhang, J. Y. Lin, and H. X. Jiang, “Comparison of Optical Transitions in InGaN Quantum Well Structures and Microdisks,” J. Appl. Phys. 89, 4951 (2001).  doi: 10.1063/1.1355280 Ι PDF

  315. K. B. Nam, J. Li, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Growth and Deep UV Picosecond Time-Resolved Photoluminescence Studies of GaN/AlN Multiple Quantum Wells,” Appl. Phys. Lett. 78, 3690 (2001).   doi: 10.1063/1.1377317 Ι PDF

  316. H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, “III-Nitride Blue Microdisplays,” Appl. Phys. Lett. 78, 1303 (2001).  doi: 10.1063/1.1351521 Ι PDF

  317. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang, “Linewidths of Excitonic Luminescence Transitions in AlGaN Alloys,” Appl. Phys. Lett. 78, 1829 (2001).  doi: 10.1063/1.1357212 Ι PDF

  318. * J. Li, K. B. Nam, K. H. Kim, T. N. Oder, H. J. Jun, J. Y. Lin, and H. X. Jiang, “Growth and Optoelectronic Properties of III-Nitride Quaternary Alloys,” Proceedings of SPIE,  4280, 27 (2001).  doi: 10.1117/12.424740 Ι PDF

  319. * J. Li, K. C. Zeng, E. J. Shin, J. Y. Lin, and H. X. Jiang, “Optimizing GaN/AlGaN Multiple Quantum Well Structures by Time-Resolved Photoluminescence,” Proceedings of SPIE 4280, 70 (2001).  doi: 10.1117/12.424744 Ι PDF

  320. C. J. Ellis, R. M. Mair, J. Li, J. Y. Lin, H. X. Jiang, J. M. Zavada, and R. G. Wilson, “Optical Properties of pr Implanted GaN Epilayers and AlGaN Alloys,” Materials Science & Engineering B - Solid State Materials for Advanced Technology 81, 167 (2001).  doi: 10.1016/S0921-5107(00)00715-7 Ι PDF

  321. J.M. Zavada, C. J. Ellis, J. Y. Lin, H. X. Jiang, J. T. Seo, U. Hommerich, M. Thaik, R. G. Wilson, P. A. Grudowski, and R. D. Dupuis, “Annealing behavior of luminescence from erbium-implanted GaN,” Materials Science & Engineering B - Solid State Materials for Advanced Technology 81, 127 (2001).  doi: 10.1016/S0921-5107(00)00689-9 Ι PDF

  322. * H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Micro-Photonic Devices,” IEEE/LEOS Annual Meeting Conf. Proc. 2, 758, (2001).  doi: 10.1109/LEOS.2001.969036 Ι PDF

  323. H. X. Jiang and J. Y. Lin, Book Review for “Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiGe,” by Michael E. Levinshtein, Serge L. Rumyantsev, and Michael S. Shur, Eds (John Wiley & Sons, New York, 2001), MRS Bulletin, Vol. 26, 728 (2001).

  324. J. Li, K.B. Nam, K. Kim, J.Y. Lin, and H.X. Jiang. "Growth and optical properties of InAlGaN Quaternary Alloy." Applied Physics Lett. 78, 61(Jan 1 2001) issue   doi: 10.1063/1.1331087 Ι PDF

  325.  ————     Year 2000

  326. T. N. Oder, J. Li, J. Y. Lin, and H. X. Jiang, “Photoresponsivity of ultraviolet detectors based on InAlGaN quaternary,” Appl. Phys. Lett. 77, 791 (2000).  doi: 10.1063/1.1306540 Ι PDF

  327. * T.N. Oder, J. Li, J.Y. Lin and H.X. Jiang, “Fabrication and Characterization of InxAlyGa1−x−yN Ultraviolet Detectors,” Symposium Proceedings of Materials Research Society, (2000).  doi: 10.1557/PROC-639-G10.7

  328. W. H. Sun, S. T. Wang, J. C. Zhang, K. M. Chen, G. G. Qin, Y. Z. Tong, Z. J. Yang, G. Y. Zhang, Y. M. Pu, Q. L. Zhang, J. Li, J. Y. Lin, anf H. X. Jiang, “Formation and dissolution of microcrystalline graphite in carbon-implanted GaN,” J. Appl. Phys. 88, 5662 (2000).  doi: 10.1063/1.1290462 Ι PDF

  329.  S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang ”InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes,” Appl. Phys. Lett. 77, 3236 (2000).  doi: 10.1063/1.1326479 Ι PDF

  330. J. Z. Li, J. Y. Lin, H. X. Jiang, and G. Sullivan, “Transient Characteristics of AlGaN/GaN Heterojunction Field Effect transistors,” Appl. Phys. Lett. 77, 4046 (11 Dec 2000)  doi: 10.1063/1.1332412 Ι PDF

  331. M.E. Aumer, S.F. Leboeuf, S.M. Bedair, M. Smith, J.Y. Lin, and H.X. Jiang "Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures" Appl. Phys. Lett. 77, 821 (2000).  doi: 10.1063/1.1306648 Ι PDF

  332. Eun-joo Shin, J. Li, J. Y. Lin, and H. X. Jiang, “Barrier Width Dependence of Quantum Efficiencies of GaN/AlxGa1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 1170 (2000).  doi: 10.1063/1.1289262 Ι PDF

  333. C.H. Wei, Z. Y. Xie, J.H. Edgar, K.C. Zeng, Y.Y. Lin, H.X. Jiang, J. Chaudhuri, C. Ignatiev, and D.N.Braski, "MOCVD Growth of BGaN on 6H-SiC (0001) Substrates," J. Electron. Mater.29, 452 (2000).  doi: 10.1007/s11664-000-0160-y Ι PDF

  334. * H.S. Kim, R.A.Mair, J. Li, Y. Lin, H.X. Jiang, "Exciton Localization Dynamics in AlGaN Alloys," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3940, 139 (2000).  doi: 10.1117/12.381453 Ι PDF

  335. * K.T. Tsen, C. Koch, Y. Chen, H.Morkoe, J. Li, J.Y. Lin, H.X. Jiang, "Electronic Raman Scattering From Mg-doped Wurtzite GaN," Symposium Proceedings of Materials Research Society,  Vol. 595  W11.12.1   doi: 10.1557/PROC-595-F99W11.42  

  336. * J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, "Correlation Between Sheet Carrier Density and Mobility Product and Persistent Photoconductivity in AlGaN/GaN Heterostructures, "Symposium Proceedings of Material Research Society Vol. 595 W11.12.1   doi: 10.1557/PROC-595-F99W11.12 

  337. K.C. Zeng, J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, "Well-width dependence of the quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells" Appl. Phys. Lett. 76, 3040 (2000).  doi: 10.1063/1.126572 Ι PDF

  338. K.T. Tsen, C. Koch,  Y.Chen, H. Morkoc, J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, " Observation of electronic Raman scattering from Mg-doped wurtzite GaN" Appl. Phys. Lett. 76, 2889 (2000).  doi: 10.1063/1.126507 Ι PDF

  339. K.C. Zeng, J. Li, J.Y. Lin, and H.X. Jiang, "Optimizing Growth Conditions for GaN/AlGaN Multiple Quantum Well Structures," Appl. Phys. Lett. 76, 864 (2000).  doi: 10.1063/1.125610 Ι PDF

  340. H.S. Kim, R.A. Mair, J. Li, J.Y. Lin and H.X. Jiang, "Time-Resolved Photoluminescence Studies of AlxGa1−xN Alloys," Appl. Phys. Lett. 76, 1252 (2000).  doi: 10.1063/1.126000 Ι PDF

  341. K.C. Zeng, J.Y. Lin, and H.X. Jiang, "Effects of Alloy Disorder on the Transport Properties of AlxGa1−xN Epilayers Probed by Persistent Photoconductivity," Appl. Phys. Lett. 76, 1728 (2000).  doi: 10.1063/1.126149 Ι PDF

  342. S.X. Jin, J. Li, J.Z. Li, J.Y. Lin and H.X. Jiang, "GaN Microdisk Light Emitting Diodes," Appl. Phys. Lett. 76, 631 (2000).  doi: 10.1063/1.125841 Ι PDF

  343. D. Qiao, L.S. Yu, S.S. Lau, J. Redwing, J.Y. Lin, and H.X. Jiang, "Dependence of Ni/AlGaN Schottky Barrier Height on Al Mode Fraction," J. Appl. Phys. 87, 801 (2000).  doi: 10.1063/1.371944 Ι PDF

  344. D. Qiao, L. S. Yu, S. S. Lau, J. Y. Lin, H. X. Jiang and T. E. Haynes, “A study of the Au/Ni Ohmic contact on p-GaN,” J. Appl. Phys. 88, 4196 (2000).  doi: 10.1063/1.1311809 Ι PDF

  345. Hyeon Soo Kim, Robin Mair, Jing Li, Jingyu Lin and Hongxing Jiang, “Optical Characterization of AlxGa1-xN Alloys Grown by MOCVD,” J. Korean Physical Society, 37, 391, (2000).

  346. R.A. Mair, J.Y. Lin, H.X. Jiang, E.D. Jones, A.A. Allerman, and S.R. Kurtz, "Time-Resolved Photoluminescence Studies of InxGa1−xAs1−yNy," Appl. Phys. Lett. 76, 188 (2000).  doi: 10.1063/1.125698 Ι PDF

  347. H. X. Jiang and J. Y. Lin, “Persistent photoconductivity in III-nitrides,” Chapter 5 in "III-Nitride Semiconductors: Electrical, Structural and Defects Properties" edited by M. O. Manasreh, (Elsevier Science, 2000).

  348.  ————     Year 1999

  349. * H.S. Kim, H.X. Jiang, J.Y. Lin, W.W. Chow, A. Botchkarev, and H. Morkoc, "Piezoelectric Effects on the Dynamics of Optical Transitions in GaN/AlGaN Multiple Quantum Wells," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3624, 198 (1999).

  350. J.Z. Li,  H.X. Jiang, J.Y. Lin, J.F. Geisz, and Sarah R. Kurtz, "Persistent Photoconductivity in Ga1-xInxNyAs1-y" Appl. Phys. Lett. 75, 1899 (1999) doi: 10.1063/1.124865 Ι PDF

  351. M.O Manasreh, J.M. Baronowsky, K. Pakula,  H.X. Jiang, J.Y. Lin, "Localized Vibrational Modes of Carbon-Hydrogen Complexes in GaN," Appl. Phys. Lett. 75, 659 (1999). doi: 10.1063/1.124473 Ι PDF

  352. J.M. Zavada, R.A. Mair, C.J. Ellis,  H.X. Jiang, J.Y. Lin, and R.G. Wilson, "Optical Transitions in Pr Ion-Implanted GaN," Appl. Phys. Lett. 75, 790 (1999). doi: 10.1063/1.124514 Ι PDF

  353. * H.X. Jiang and J.Y. Lin, "Optical properties of III-nitride microstructures," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), (1999), invited.

  354. H.X. Jiang, J.Y. Lin , K.C. Zeng, and W. Yang, "Optical resonance modes in GaN pyramid Microcavities," Appl. Phys. Lett. 75, 763 (1999).doi: 10.1063/1.124505 Ι PDF

  355. K.C. Zeng, L. Dai, J.Y. Lin, and H.X. Jiang, "Optical resonance mode in InGaN/GaN multiple-quantum-well microring cavities," Appl. Phys. Lett. 75, 2563 (1999). doi: 10.1063/1.125078 Ι PDF

  356.   L. S. Yu, D. Qiao, S. S. Lau, J. M. Redwig, J. Y. Lin , and H. X. Jiang, “Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN Heterostructure by photoconductance method,” J. Appl. Phys. 86, 2696 (1999).  doi: 10.1063/1.371113 Ι PDF

  357. K.C. Zeng, J. Y. Lin, H. X. Jiang, and W. Yang, "Optical Properties of High Quality Insulating GaN Epilayers," Appl. Phys. Lett. 74, 3821 (1999). doi: 10.1063/1.124191 Ι PDF

  358. K.C. Zeng, J. Y. Lin, H. X. Jiang, and W. Yang, "Optical Properties of GaN Pyramids," Appl. Phys. Lett. 74, 1227 (1999). doi: 10.1063/1.123507 Ι PDF

  359. H. X. Jiang and J. Y. Lin, "Mode Spacing Anomaly in InGaN Blue Lasers," Appl. Phys. Lett. 74, 1066 (1999). doi: 10.1063/1.123483 Ι PDF

  360. R. Mair, J. Li, S. K. Duan, J. Y. Lin, and H. X. Jiang, "Time-Resolved Photoluminescence of an Ionized Donor-Bound Exciton in GaN," Appl. Phys. Lett. 74, 513 (1999). doi: 10.1063/1.123171 Ι PDF

  361. C. H. Wei, Z. Y. Xie, J. H. Edgar, K. C. Zeng, J. Y. Lin, H. X. Jiang, G. Jiji, J. Chaudhuri, and D. N. Braski, "Growth and Characterization of Bx Ga1-xN on 6H-SiC (0001)," MRS Internet J. Nitride Semicond. Res. 4S1, G3.79 (1999).

  362. H.S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc "Piezoelectric effects in GaN/AlGaN Multiple Quantum Wells Probed By Picosecond Time-Resolved Photoluminescence," MRS Internet J. Nitride Semicond. Res. 4S1, G3.3 (1999).

  363. J.M. Zavada, M. Thaik, U. H?mmerich, J. D. MacKenzie, C. R. Abernathy, F. Ren, H. Shen, J. Pamulapati, H. X. Jiang, J. Y. Lin, and R. G. Wilson, "Luminescence From Er-Doped GaN Thin Films," MRS Internet J. Nitride Semicond. Res. 4S1, G11.1 (1999), invited.

  364. H. Morkoc R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, D. Pavlidis, and K.Shenai "Material Properties of GaN in the Context of Electron Devices," MRS Internet J. Nitride Semicond. Res. 4S1, G1.2 (1999), invited. doi: 10.1557/PROC-537-G1.2

  365. H. Morkoc R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, and D. Pavlidis "Spontaneous Polarization and Piezoelectric Field in Nitride Semiconductor Heterostructures", J. of the Korean Physical Society, 34 S224-S233 (1999), invited. doi: 10.3938/jkps.34.224

  366. H. X. Jiang and J. Y. Lin, "Persistent Photoconductivity in GaN," A3.6 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).

  367. H. X. Jiang and J. Y. Lin, "Time-Resolved Photoluminescence Studies of GaN," A3.5 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).

  368. * J. Z. Li, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation Between Sheet Carrier Density and Mobility Product and Persistent Photoconductivity in AlGaN/GaN Heterostructures,” Material Research Society Symposium Proceedings, Vol. 595 W11.12.1, Fall (1999). doi: 10.1557/PROC-595-F99W11.12

  369. * M. Smith, R. Mair, H. X. Jiang, E. D. Jones, A. A. Allerman, and S. R. Kurtz, “Optical properties of InxGa1-xAs1-yNy ,” Material Research Society Symposium Proceedings, Fall (1999).

  370.  ————     Year 1998

  371. H.S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc, "Piezoelectric Effects on the Optical Properties of GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 3426 (1998). doi: 10.1063/1.122786 Ι PDF

  372. S. K. Duan, X. Teng, Y. Wang, G. Li, H. X. Jiang, P. Han, and D. C. Lu, "MOVPE Growth of GaN and LED on (111) MgAl2O4," J. of Crystal Growth 175 (1998). doi: 10.1016/S0022-0248(98)00235-8 Ι PDF

  373. D.N. McIlroy, S.D. Hwang, K. Yang, N. Remmes, P.A. Dowben, A.A. Ahmad, N.J. Ianno, J. Z. Li, J. Y. Lin, and H. X. Jiang, "The Incorporation of Nickel and Phosphorus Dopants Unto Boron-Carbon Alloy Thin Films," Appl. Phys. A67, 335 (1998). doi: 10.1007/s003390050780 Ι PDF

  374. K.C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett., "Plasma Heating in Highly Excited GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 2476 (1998).doi: 10.1063/1.122487 Ι PDF

  375. K.C. Zeng, J. Y. Lin, and H. X. Jiang, "Collective Effects of Interface Roughness and Alloy Disorder in InGaN/GaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 1724 (1998). doi: 10.1063/1.122258 Ι PDF

  376. H.B. Yu, H. Htoon, A. Delozanne, C. K. Shih, P.A. Grudowski, R. D. Dupuis, K.C. Zeng, R. Mair, J. Y. Lin, and H. X. Jiang "Dynamics of localized excitons in InGaN/GaN quantum," J. Vac. Sci. & Tech. B16, 2215 (1998). doi: 10.1116/1.590150 Ι PDF

  377. J.Z. Li, J. Y. Lin, H. X. Jiang, and M. A. Khan, "Effects of Persistent Photoconductivity on the Characteristic Performance of an AlGaN/GaN Heterostructure Ultraviolet Detector," Appl. Phys. Lett. 72, 2868 (1998). doi: 10.1063/1.121485 Ι PDF

  378. R. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, W. Kim, A.Botchkarevand, H. Morkoc, and M. Asif Khan, "Optical Modes Within III-Nitride Multiple Quantum Well Microdisk Cavities," Appl. Phys. Lett. 72, 1530 (1998). doi: 10.1063/1.120573 Ι PDF

  379. H.X. Jiang and J. Y. Lin, "Dynamics of Fundamental Optical transitions in GaN," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3277, 108 (1998), invited. doi: 10.1117/12.306144 Ι PDF

  380. * K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, H. Morkoc, and M. Asif Khan, "Optical Transitions and Dynamic Processes in III-Nitride Epilayers and Multiple Quantum Wells," IEEE International Symposium on Compound Semiconductors, edited by Mike Melloch and Mark Reed, p235, 1998 IEEE. doi: 10.1109/ISCS.1998.711625 Ι PDF

  381. * R. Mair, K.C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, W. Kim, A. Botchkarevand, H. Morkoc, and M. Asif Khan, "Photoluminescence Properties of GaN/AlGaN Multiple Quantum Well Micro-disks," Symposium Proceedings of Materials Research Society, Vol 482, 649 (1998). doi: 10.1557/PROC-482-649

  382. * K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, H. Morkoc, and M. Asif Khan, "Well Thickness and Doping Effects, and Room Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Symposium Proceedings of Materials Research Society, Vol 482, 643 (1998). doi: 10.1557/PROC-482-643

  383.  ————     Year 1997

  384. R. Mair, K.C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, W. Kim, A. Botchkarevand and H. Morkoc, "Optical Properties of GaN/AlGaN Multiple Quantum Well Micro-disks," Appl. Phys. Lett. 71, 2898 (1997). doi: 10.1063/1.120209 Ι PDF

  385. * J. Z. Li, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Persistent Photoconductivity in p-Type GaN Epilayers and n-type AlGaN/GaN Heterostructures," Symposium Proceedings of Materials Research Society, Fall, 1996, Vol. 449, 537(1997). doi: 10.1557/PROC-449-537

  386. * M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Symposium Proceedings of Materials Research Society, Vol 449, 829 (1997). doi: 10.1557/PROC-449-829

  387. K.C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, and H. Morkoc, "Effects of Well Thickness and Si-Doping on the Optical Properties of GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 71, 1368 (1997). doi: 10.1063/1.119896 Ι PDF

  388. K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, J. C. Robert, E. L. Piner, F. G. McIntosh, S. M. Bedair, and J. Zavada, "Optical Transitions in InGaN/AlGaN Single Quantum Wells," J. Vac. & Sci. Tech. B15, 1139 (1997). doi: 10.1116/1.589428 Ι PDF

  389. J.Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure," J. Vac. & Sci. Tech. B15, 1117 (1997). doi: 10.1116/1.589424 Ι PDF

  390. * M. Smith, K. C. Zeng, J. Y. Lin, "Effects of Well Thickness on the Light Emission Properties in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," 1997 Digest of the LEOS Summer Topical Meeting on GaN Materials, Processing, and Devices, p31. doi: 10.1109/LEOSST.1997.619249 Ι PDF

  391. J.Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Persistent Photo-conductivity and Two Dimensional Electron Gas in AlGaN/GaN Heterostructures," J. Appl. Phys. 82, 1227 (1997). doi: 10.1063/1.36589 Ι PDF

  392. M. Smith, J. Y. Lin, H. X. Jiang, and A. Khan, "Room Temperature Intrinsic Optical Transitions in GaN Epilayers: the Band-to-Band versus Excitonic Transition," Appl. Phys. Lett. 71, 635 (1997). doi: 10.1063/1.119813 Ι PDF

  393. M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Exciton-Phonon Interactions in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 70, 2882 (1997). doi: 10.1063/1.119030 Ι PDF

  394. R.J. Bandaranayake, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Synthesis and Properties of Cd1-xMnxS Diluted Magnetic Semiconductor Ultrafine Particles," J. of Magnetism & Magnetic Materials, 169, 289 (1997). doi: 10.1016/S0304-8853(96)00746-9

  395. C.J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Jiang, "Quantum Shift of Band-Edge Stimulated Emission in InGaN-GaN Multiple Quantum Well Light-Emitting Diodes," Appl. Phys. Lett. 70, 2978 (1997). doi: 10.1063/1.118762 Ι PDF

  396. S.D. Hwang, K. Yang, P. A. Dowben, A. A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, and D. N. Mcllroy, "Fabrication of n-Type Nickel Doped B5C1+d Homojunction and Heterojunction Diodes," Appl. Phys. Lett. 70, 1028 (1997). doi: 10.1063/1.118434 Ι PDF

  397. H.X. Jiang, J. Y. Lin, M. Asif Khan, Q. Chen, and J. W. Yang, "Surface Emission of InxGa1−xN Epilayers under Strong Optical Excitation," Appl. Phys. Lett. 70, 984 (1997). doi: 10.1063/1.118456 Ι PDF

  398.  ————     Year 1996

  399. M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, H. Kim, and H. Morkoc "Optical Transitions in GaN/AlxGa1−xN Multiple Quantum Wells Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 69, 2453 (1996). doi: 10.1063/1.117495 Ι PDF

  400. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Time-Resolved Photoluminescence Studies of InGaN Epilayers," Appl. Phys. Lett. 69, 2837 (1996). doi: 10.1063/1.117335 Ι PDF

  401. J.Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, and H. Morkoc, "Nature of Mg Impurities in GaN," Appl. Phys. Lett. 69, 1474 (1996). doi: 10.1063/1.116912 Ι PDF

  402. M. Smith, J. Y. Lin, and H. X. Jiang, "Disorder and Persistent Photoconductivity in ZnxCd1-xSe Semiconductor Alloys," Phys. Rev. B54, 1471 (1996). doi: 10.1103/PhysRevB.54.1471 Ι PDF

  403. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Free Excitonic Transitions in GaN Grown by Metal-Organic Chemical Vapor Deposition," J. Appl. Phys. 79, 7001 (1996). doi: 10.1063/1.362448 Ι PDF

  404. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, S.-H. Wei, M. Asif Khan, and C. J. Sun, "Fundamental Optical Transitions in GaN," Appl. Phys. Lett. 68, 2784 (1996). doi: 10.1063/1.116606 Ι PDF

  405. G. D. Chen, J. Y. Lin, and H. X. Jiang, "Effects of Electron Mass Anisotropy on Hall Factors in 6H-SiC," Appl. Phys. Lett. 68, 1341 (1996).doi: 10.1063/1.115928 Ι PDF

  406. C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Metastability and Persistent Photoconductivity in Mg-Doped P-type GaN," Appl. Phys. Lett. 68, 1808 (1996). doi: 10.1063/1.116020 Ι PDF

  407. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, "Mechanisms of Band-Edge Emissions in Mg-Doped P-type GaN," Appl. Phys. Lett. 68, 1883 (1996). doi: 10.1063/1.116282 Ι PDF

  408. G.D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, "Photoluminescence Studies of Band-Edge Transitions in GaN Epitaxial Layers Grown by Molecular Beam Epitaxy," J. Appl. Phys. 79, 2675 (1996). doi: 10.1063/1.361138 Ι PDF

  409. * H. Morkoc, W. Kim, O. Aktas, A. Salvador, A. Botchkarev, D. C. Reynolds, D. C. Look, M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, T. J. Schmidt, X. H. Yang, W. Shan, and J. J. Song, "Optical Properties of Mg-GaN, GaN/AlGaN SCH Structures, and GaN on ZnO Substrates," Symposium Proceedings of Materials Research Society, 395, p527, 1996, invited. doi: 10.1557/PROC-395-527

  410.  ————     Year 1995

  411. M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, "Excitonic Recombination in GaN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 67, 3387 (1995). doi: 10.1063/1.114902 Ι PDF

  412. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Acceptor-Bound Exciton Recombination in p-type GaN," Appl. Phys. Lett. 67, 3295 (1995). doi: 10.1063/1.115225 Ι PDF

  413. G.D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Neutral-Donor-Bound Exciton Recombination Dynamics in GaN Grown by Metal- Organic Chemical Vapor Deposition," Appl. Phys. Lett. 67, 1653 (1995). doi: 10.1063/1.115046 Ι PDF

  414. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, "Dynamics of a Band-Edge Transition in GaN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 66, 3474 (1995). doi: 10.1063/1.113768 Ι PDF

  415. R.J. Bandaranayake, G. W. Wen, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Structural Phase Behavior in II-VI Semiconductor Quantum Dots," Appl. Phys. Lett. 67, 831 (1995). doi: 10.1063/1.115458 Ι PDF 

  416. G.W. Wen, J. Y. Lin, and H. X. Jiang, "Quantum-Confined Stark Effects in Semiconductor Quantum Dots," Phys. Rev. B52, 5913 (1995). doi: 10.1103/PhysRevB.52.5913 Ι PDF 

  417. R.J. Bandaranayake, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Structure and Spin-Glass Properties of Cd0.5Mn0.5S Diluted Magnetic Semiconductor Quantum Dots," IEEE, Transactions on Magnetics, 31, 3761 (1995). doi: 10.1109/20.489763 Ι PDF 

  418. M. Smith, J. Y. Lin, and H. X. Jiang, "Transport Properties due to Alloy Disorder in ZnxCd1-xSe," Proc. of 22nd International Conference on the Physics of Semiconductors, 3, 1827 (1995). 

  419. * A. Dissanayake, W. Hein, J. Y. Lin, and H. X. Jiang, "Exciton Dynamics and Quantum- Confined Stark Effects in CdS1−xSex Quantum Dots," Proc. of 22nd International Conference on the Physics of Semiconductors, 1, 85 (1995). 

  420. M. Smith, J. Y. Lin, and H. X. Jiang, "Metal-Insulator Transition In Semiconductor Alloys Probed by Persistent Photoconductivity," Phys. Rev. B51, 4132, (1995). doi: 10.1103/PhysRevB.51.4132 Ι PDF 

  421. A.S. Dissanayake, J. Y. Lin, and H. X. Jiang, "Quantum-Confined Stark Effects in CdS1−xSex Quantum Dots," Phys. Rev. B51, 5457, (1995). doi: 10.1103/PhysRevB.51.5457 Ι PDF

  422.  ————     Year 1994

  423. A. S. Dissanayake, J. Y. Lin, H. X. Jiang, Z. J. Yu, and J. H. Edgar, "Low Temperature MOCVD Epitaxial Growth and Photoluminescence Characterization of GaN," Appl. Phys. Lett. 65, 2317 (1994). doi: 10.1063/1.112729 Ι PDF

  424. R. J. Bandaranayake, M. Smith, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Synthesis and Properties of Cd1-xMnxS Diluted Magnetic Semiconductor Nanoparticles," IEEE Trans. on Magnetics, 30, 4930(1994). doi: 10.1109/20.334269 Ι PDF

  425. M. Smith, A. Dissanayake, and H. X. Jiang, "Relaxation of Spin-Glass Magnetization in Cd1-xMnxTe Diluted Magnetic Semiconductors," Phys. Rev. B 49,4514 (1994). doi: 10.1103/PhysRevB.49.4514 Ι PDF

  426. P. Staikov, D. Baum, J. Y. Lin, and H. X. Jiang, "Evidence for Bistable Defects in 6H-SiC," Solid State Commun. 89, 995 (1994). doi: 10.1016/0038-1098(94)90501-0 Ι PDF

  427. M. Smith, A. Dissanayake, H. X. Jiang, and L. X. Li, "Relaxation of Magnetization in Cd1-xMnxTe Diluted Magnetic Semiconductors under Illumination," J. Appl. Phys. 75, 5734 (1994). doi: 10.1063/1.355598 Ι PDF

  428. M. Smith, A. Dissanayake, H. X. Jiang, and L. X. Li, "Relaxation of Magnetization in Cd1-xMnxTe Diluted Magnetic Semiconductors under Illumination," J. Appl. Phys. 75, 5734 (1994). doi: 10.1063/1.355598 Ι PDF

  429. * P. Staikov, D. Baum, J. Y. Lin, and H. X. Jiang, "Persistent Photoconductivity and Carrier Mobility in Nitrogen Doped 6H-SiC," Proc. of Inter. Conf. on SiC and Related Materials, p235 (1994).

  430.  ————     Year 1993

  431. A. Dissanayake, J. Y. Lin, and H. X. Jiang, "Persistent Photoconductivity in Zn0.043Cd0.96Te Semiconductor Thin Films," Phys. Rev. B 48, 8145 (1993). doi: 10.1103/PhysRevB.48.8145 Ι PDF

  432. J. Y. Lin, A. Dissanayake, and H. X. Jiang, "DX Centers in Al0.34Ga0.66As Amorphous Thin Films," Solid State Commun. 87, 787 (1993). doi: 10.1016/0038-1098(93)90414-I Ι PDF

  433. E. X. Ping and H. X. Jiang, "Effect of Charge Carrier Screening on the Exciton Binding Energy in GaAs/AlxGa1-xAs Quantum Wells," Phys. Rev. B 47, 2101 (1993). doi: 10.1103/PhysRevB.47.2101 Ι PDF

  434.  ————     Year 1992

  435. A. S. Dissanayake and H. X. Jiang, "Lattice Relaxed Impurity and Persistent Photoconductivity in Nitrogen Doped 6H-SiC," Appl. Phys. Lett. 61, 2048 (1992). doi: 10.1063/1.108328 Ι PDF

  436. J. Y. Lin, A. Dissanayake, and H. X. Jiang, "Electric-Field-Enhanced Persistent Photoconductivity in a Zn0.02Cd0.98Te Semiconductor Alloy," Phys. Rev. B 46, 3810 (1992). doi: 10.1103/PhysRevB.46.3810 Ι PDF

  437. A. S. Dissanayake, M. Elahi, H. X. Jiang, and J. Y. Lin, "Kinetics of Persistent Photoconductivity in Al0.3Ga0.7As and Zn0.3Cd0.7Se Semiconductor Alloys," Phys. Rev. B 45, 13996 (1992). doi: 10.1103/PhysRevB.45.13996 Ι PDF

  438. H. X. Jiang, A. Dissanayake, and J. Y. Lin, "Band-Tail States in a Zn0.3Cd0.7Se Semiconductor Alloy Probed by Persistent Photoconductivity," Phys. Rev. B 45, 4520 (Rapid Commun.) (1992). doi: 10.1103/PhysRevB.45.4520 Ι PDF

  439.  ————     Year 1991

  440. A. S. Dissanayake, S. X. Huang, H. X. Jiang, and J. Y. Lin, "Charge Storage and Persistent Photoconductivity in a CdS0.5Se0.5 Semiconductor Alloys," Phys. Rev. B 44, 13343 (1991). doi: 10.1103/PhysRevB.44.13343 Ι PDF

  441. H. X. Jiang, G. Brown, and J. Y. Lin, "Persistent Photoconductivity in II-VI and III-V Semiconductor Alloys and a Novel Infrared Detector," J. Appl. Phys. 69, 6701 (1991). doi: 10.1063/1.348889 Ι PDF

  442.  ————     Year 1990

  443. J. Y. Lin, D. Baum, A. Honig, and H. X. Jiang, "Dynamics of Bound-Exciton Energy Transformation To Edge-Luminescence Centers in CdS," J. Lumines. 45, 251 (1990). doi: 10.1016/0022-2313(90)90160-D Ι PDF

  444. J. Y. Lin, S. X. Huang, L. Q. Zu, E. X. Ping, and H. X. Jiang, "Persistent Photoconductivity In Cd0.7Zn0.3Se Mixed Crystals," J. Lumines. 45, 198 (1990). doi: 10.1016/0022-2313(90)90144-Z Ι PDF

  445. H. X. Jiang, L. Q. Zu, and J. Y. Lin, "Dynamics of Exciton Localization In CdSe0.5S0.5 Mixed Crystals," Phys. Rev. (Rapid Commun.) B 42, 7284 (1990). doi: 10.1103/PhysRevB.42.7284 Ι PDF

  446. J. Y. Lin, A. Dissanayake, G. Brown, and H. X. Jiang, "Relaxation of Persistent Photoconductivity in Al0.3Ga0.7As," Phys. Rev. B 42, 5855 (1990). doi: 10.1103/PhysRevB.42.5855 Ι PDF

  447. H. X. Jiang, E. X. Ping, P. Zhou, J. Y. Lin, "Dynamics of Exciton Transfer Between the Bound and the Continuum States in GaAs-AlxGa1-xAs Multiple Quantum Wells," Phys. Rev. B (Rapid Commun.) 41, 12949 (1990). doi: 10.1103/PhysRevB.41.12949 Ι PDF

  448. J. Y. Lin and H. X. Jiang, "Relaxation of Stored Charge Carriers in Zn0.3Cd0.7Se Mixed Crystals," Phys. Rev. B 41, 5178 (1990). doi: 10.1103/PhysRevB.41.5178 Ι PDF

  449. H. X. Jiang and J. Y. Lin, "Percolation Transition of Persistent Photoconductivity in II-VI Mixed Crystals," Phys. Rev. Lett. 64, 2547 (1990). doi: 10.1103/PhysRevLett.64.2547 Ι PDF

  450. S. A. Solin, H. X. Jiang, H. Kim, and T. J. Pinnavaia, "Raman Spectra of Tetramethylammonium-Trimethylammonium Mixed Ion Vermiculite Clay Intercalation Compounds," J. Raman Spectra. 21, 103 (1990). doi: 10.1002/jrs.1250210207

  451.  ————     Year 1989

  452. P. Zhou, H. X. Jiang, R. S. Bannwart, S. A. Solin, and G. Bai, "Excitonic Transition In GaAs-AlxGa1-xAs Multiple Quantum Wells Affected by Interface Roughness," Phys. Rev. B 40, 11862 (1989). doi: 10.1103/PhysRevB.40.11862 Ι PDF

  453. E. X. Ping and H. X. Jiang, "Resonant Tunneling of Double Barrier Quantum Wells Affected by Interface Roughness," Phys. Rev. B 40, 11792 (1989). doi: 10.1103/PhysRevB.40.11792 Ι PDF

  454. J. Y. Lin and H. X. Jiang, "Electronic Structure and Dispersion of Compensated n-i-p-i Superlattices with Small Period Lengths," Phys. Rev. B 40, 5561 (1989). doi: 10.1103/PhysRevB.40.5561 Ι PDF

  455. H. X. Jiang and J. Y. Lin, "Persistent Photoconductivity and Related Critical Phenomena in Zn0.3Cd0.7Se," Phys. Rev. (Rapid Commun.) B 40, 10025 (1989). doi: 10.1103/PhysRevB.40.10025 Ι PDF

  456. J. Y. Lin, Q. Zhu, D. Baum, and A. Honig, "Direct Observation of Edge-Luminescence Excited by Long-Lived-Exciton-Polariton Propagation in CdS," Phys. Rev. (Rapid Commun.) B 40, 1385 (1989). doi: 10.1103/PhysRevB.40.1385 Ι PDF

  457. * H. X. Jiang, P. Zhou, S. A. Solin, and G. Bai, "Interface Roughness of Quantum Wells Studied by Time-Resolved Photoluminescence," Chemistry and Defects in Semiconductors Heterostructure, eds. by M. Kawabe, T.D. Sands, E.R. Weber, and R.S. Williams (MRS, Vol. 148, Pittsburgh, 1989) p. 361. doi: 10.1557/PROC-148-361

  458.  ————     Year 1988

  459. H. X. Jiang and J. Y. Lin, "Semiconductor Superlattices with Periodic Disorder," J. Appl. Phys. 63, 1984 (1988). doi: 10.1063/1.341098 Ι PDF

  460. H. Yan and H. X. Jiang, "Band Structure of Compensated n-i-p-i Superlattice," Phys. Rev. B 37, 6425 (1988). doi: 10.1103/PhysRevB.37.6425 Ι PDF

  461. H. X. Jiang, "Neutral Donor-Acceptor-Pair Recombination under a Uniform Electric Field," Phys. Rev. B 37, 4126 (1988). doi: 10.1103/PhysRevB.37.4126 Ι PDF

  462. D. Baum, H. X. Jiang and A. Honig, "The Correlation of Excitation Spectroscopy of Edge Luminescence and Persistent Photoconductivity in CdS," J. Lumines. 40, 119 (1988). doi: 10.1016/0022-2313(88)90116-0 Ι PDF

  463. H. X. Jiang, D. Baum and A. Honig, "Dynamics and Spatial Distribution of Edge Luminescence Generators in CdS," J. Lumines. 40, 557 (1988). doi: 10.1016/0022-2313(88)90328-6 Ι PDF

  464. * H. X. Jiang and H. Yan, "Dispersion and Miniband Structure of Compensated n-i-p-i Doping Superlattices," in Quantum Well and Superlattices Physics II, eds. by F. Capasso, G. Dohler and J. Schulman (SPIE, Vol. 943, Washington, 1988) p. 124

  465. * S. A. Solin and H. X. Jiang, "Raman Spectra of Clay Intercalation Compounds - Mixed Ion Vermiculites," in Vibrational Spectra and Structure, ed. by H.D. Bist and J.R. Durig, (Elsevier, Amsterdam, 1988).

  466. * H. X. Jiang, S. A. Solin, H. Kim and T. J. Pinnavaia, "Raman Spectra of Ion Intercalated Vermiculites," in Microstructure and Properties of Catalysts, ed. by M.M.J. Treacy, J.M. Thomas, and J.M. White, (Materials Research Society, Pittsburgh, 1988), p. 225. doi: 10.1557/PROC-111-225

  467.  ————     Year 1987

  468. H. X. Jiang and J. Y. Lin, "Band Structure of Non-Ideal Semiconductor Superlattices," Superlattices and Microstructures 3, 689 (1987). doi: 10.1016/0749-6036(87)90200-X Ι PDF

  469. H. X. Jiang and J. Y. Lin, "Band Structure of Superlattices with Graded Interfaces," J. Appl. Phys. 61, 624 (1987). doi: 10.1063/1.338214 Ι PDF

  470. H. X. Jiang, "Strong-Perturbation Theory for Impurities in Semiconductors," Phys. Rev. B 35, 9287 (1987). doi: 10.1103/PhysRevB.35.9287 Ι PDF

  471.  ————     Year 1986

  472. H. X. Jiang and J. Y. Lin, "Superlattice with Multiple Layers per Period," Phys. Rev. B 33, 5851 (1986). doi: 10.1103/PhysRevB.33.5851  Ι PDF

  473. H. X. Jiang and J. Y. Lin, "The Ground State of a Particle under the Influence of a Uniformly Charged Sphere," Am. J. Phys. 54, 1046 (1986). doi: 10.1119/1.14823 Ι PDF

  474.  ————     Year 1985

  475. H. X. Jiang and J. Y. Lin, "Precession of Kepler's Orbit," Am. J. Phys. 53, 694 (1985). doi: 10.1119/1.14287 Ι PDF

  476. H. X. Jiang, "Characterization of Si Electrode - Electrolyte Interface Under Illumination," Appl. Phys. Commun. 5, 231 (1985).

       Notice:  * indicate proceeding papers

Books, Book Chapters and Review Articles

   Invited review articles in scientific journals

  1. H. X. Jiang and J. Y. Lin, "Dynamics of Fundamental Optical transitions in GaN," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3277, 108 (1998).
  2. H. X. Jiang and J. Y. Lin, “Optical properties of III-nitride microstructures,” Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), (1999).
  3. H. X. Jiang and J. Y. Lin, Book Review for “Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiGe, by Michael E. Levinshtein, Serge L. Rumyantsev, and Michael S. Shur, Eds (John Wiley & Sons, New York, 2001), MRS Bulletin, Vol. 26, 728 (2001).
  4. H. X. Jiang and J. Y. Lin, “AlGaN and InAlGaN Alloys – Epitaxial Growth, Optical and Electrical Properties, and Applications,” in a special issue of Opto-Electronics Review, 10, 271 (2002).
  5. H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Microstructures and Micro-Size Emitters,” J. of the Korean Physical Society, 42, S757 (2003).
  6. J. Y. Lin and H. X. Jiang, “Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices,” J. of the Korean Physical Society, 42, S535 (2003).
  7. J. Y. Lin and H. X. Jiang, “III-Nitride Ultraviolet Photonic Materials – Epitaxial Growth, Optical and Electrical Properties, and Applications,” Proceedings of SPIE on Quantum Sensing, 4999, 287 (2003).
  8. H. X. Jiang & J. Y. Lin, “III-Nitride Quantum Devices – Microphotonics,” CRC Critical Reviews in Solid State and Materials Sciences, (P. Holloway, Editor), 28, 131 (2003).
  9. Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “III-nitride micro-emitter arrays: development and applications,” J. Phys. D: Appl. Phys. 41 094001 (2008).
  10. H.X. Jiang and J.Y. Lin, "Semiconductor lasers: Expanding into blue and green," Nature Photonics 5 521 (2011) doi:10.1038/nphoton.2011.210 Ι PDF
  11. Invited feature articles written for popular trading magazines

  12. H. X. Jiang and J. Y. Lin, “Microdisplays Based on III-Nitride Wide Band Gap Semiconductors,” oe magazine (The Monthly Publication of SPIE-The internal Society for Optical Engineering), July 2001 issue, page 28.
  13. H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Micro-Size Light Emitters,” III-Vs Review, 14, 35 (2001) [June/July 2001 issue].
  14. H. X. Jiang, J. Y. Lin, R. Hui, and J. Zavada, “III-nitrides show promise for telecomm wavelengths,” Laser Focus World, Nov. issue, S8 (2003).
  15. J. Y. Lin, J. Day, J. Li, D. Lie, C. Bradford, and H. X. Jiang, "High-resolution group III nitride microdisplays," SPIE Newsroom, Dec. issue (2011). Ι PDF
  16.    Books edited

  17. "Ultrafast Phenomena in Semiconductors V (Proceedings of SPIE)," Hongxing Jiang, Kong-thon F. Tsen and Jin-Joo Song,(SPIE-International Society for Optical Engineers, 2001)
  18. "III-Nitride Semiconductors: Optical Properties (Optoelectronic Properties of Semiconductors and Superlattices, V. 14-15)," M.O. Manasreh and Hongxiang Jiang (CRC, 2002)
  19. "Ultrafast Phenomena in Semiconductors VI, " Kong Thon Tsen, Jin-Joo Song and Hongxing Jiang, (SPIE Society of Photo-Optical Instrumentation Engineers, 2002)
  20. "Ultrafast Phenomena in Semiconductors: VII (Proceedings of SPIE)," Kong-Thon F. Tsen, Jin-Jong Song and Hongxing Jiang, (SPIE-International Society for Optical Engineers, 2003)
  21. "Ultrafast Phenomena In Semiconductors And Nanostructure Materials IX (Proceedings of SPIE)," Kong-Thon F Tsen, Jin-Joo Song and Hongxing Jiang, (Society of photo-optical instrumentation engineers, 2005)
  22. "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X (Proceedings of Spie)," Kong-Thon F Tsen, Jin-Joo Song and Hongxing Jiang, (SPIE-International Society for Optical Engineers, 2006)
  23. "Wide Bandgap Light Emitting Materials And Devices," Gertrude F. Neumark, Igor L. Kuskovsky and Hongxing Jiang, (Wiley-VCH 2007)
  24. "Compound Semiconductors for Generating, Emitting, and Manipulating Energy," MRS Fall 2011 Meeting Proceedings (Symposium O), Edited by T. Li, M. Mastro, R. Dagar, H. X. Jiang, and J. Kim.
  25.    Invited book chapters

  26. H. X. Jiang and J. Y. Lin, "Time-Resolved Photoluminescence Studies of GaN," A3.5 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).
  27. H. X. Jiang and J. Y. Lin, "Persistent Photoconductivity in GaN," A3.6 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).
  28. H. X. Jiang and J. Y. Lin, “Persistent photoconductivity in III-nitrides,” Chapter 5 in "III-Nitride Semiconductors: Electrical, Structural and Defects Properties" edited by M. O. Manasreh, (Elsevier Science, 2000).
  29. H. X. Jiang, J. Y. Lin, and W. W. Chow  “Time-Resolved Photoluminescence Studies of III-Nitrides,” Chapter 1 in "Optical Properties of III-Nitrides I" edited by M .O. Manasreh and H. X. Jiang, (Taylor & Francis Books, New York & London 2002).
  30. H. X. Jiang and J. Y. Lin, “Carrier Dynamics Probed by Time-Resolved Photoluminescence,”– in “Ultrafast Dynamics Processes in Semiconductors,” Book Volume 92 – Topics in Applied Physics, edited by K. T. Tsen, published by Springer-Verlag Berlin, (Berlin Heidelberger, 2004).
  31. H. X. Jiang & J. Y. Lin, "AlN Epitaxial Layers for UV Photonics" – Chapter 7 in Optoelectronic Devices: III-Nitride, edited by M. Razeghi and M. Heini, published by Elsevier Ltd. (Amsterdam, 2004).
  32. H. X. Jiang and J. Y. Lin, “III-Nitride Micro-Cavity Light-Emitters,” – in “Wide Bandgap Light-Emitting Materials and Devices,” edited by G.F. Neumark, I. Kuskovsky, and H. X. Jiang, published by Wiley –VCH Verlag GmbH, 2007.
  33. R. Dahal, J. Y. Lin, H. X. Jiang, and J. Zavada, "Er doped InxGa1-xN for optical communications," Chapter 5 in Rare-earth doped III-Nitrides for Optoelectronic and Spintronic Applications, edited by K. O’Donnell & V. Dierolf, Canopus Academic Publishing Ltd and Springer SBM. (2010)
  34. J. Li, J. Y. Lin, H. X. Jiang, and N. Sawaki, "III-Nitrides on Si Substrates," Chapter 3 in III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, edited by T. Li, M. Mastro and A. Dadgar, published by CRC Press (Boca Raton 2010).
  35. A. Sedhain, J.Y. Lin, and H.X. Jiang, "AlN: Properties and Applications," Chapter 2 in Handbook of Luminescent Semiconductor Materials, edited by L. Bergman and L. McHale, published in September, 2011 by CRC Press, Taylor & Francis Group (ISBN-13: 978-1439834671).
  36. B. N. Pantha, J. Y. Lin, and H. X. Jiang, "High qaulity Al-rich AlGaN alloys," Chapter 2 in GaN and ZnO-based Materials and Devices, edited by S.J. Pearton, published in February 2012 by Springer, Springer Series in Materials Science (ISBN: 978-3-642-23520-7).
  37. T. N. Oder, J. Y. Lin, and H. X. Jiang, "III-nitride photonics crystals for lighting applications," Chapter 6 in "Handbook of Microcavities", Pan Stanford Publishing, 2015, ISBN 978-981-4463-24-9 (Hardcover), 978-981-4463-25-6 (ebook).
  38. N. Napal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, and J. M. Zavada, "MOCVD growth of Er-doped III-N and optical-magnetic characterization," Chapter 7 in "Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics," edited by V. Dierolf, I. T. Ferguson, and J. M. Zavada, Woodhead Publishing, Elsevier, 2016, pp. 225-255.