Publication List:

        Notice: The distribution and use of the following published papers are subject to the specific copyright rules set by different conferences and journals.  * indicate proceeding papers

      ————     Year 2025


1.   J. Y. Lin and H. X. Jiang, "Development of large area hexagonal boron nitride quasi-bulk crystals," Proceedings Volume 13376, Quantum Sensing and Nano Electronics and Photonics XXI; 133760A (2025).  doi: 10.1117/12.3040091 Ι PDF Ι Invited


2.   Hongxing Jiang and Jingyu Lin, "Development of wafer-scale h-BN quasi-bulk crystals," chapter 27, in "Gallium Nitride and Related Materials-Device Processing and Materials Characterization for Power Electronics Applications," edited by Isik Kizilyalli, Jung Han, James Speck, and Eric Carlson, The Materials Research Society Series, Springer 2025.  Development of wafer-scale h-BN quasi-bulk crystals Ι Invited


3.   G. Somasundaram, A. Tingsuwatit, Z. Alemoush, J. Li, J. Y. Lin, and H. X. Jiang, “Transport properties of h-BN lateral devices,” Appl. Phys. Lett. 126, 043502 (2025).  doi: 10.1063/5.0241120 Ι PDF


4.   H. Alwan, N. K. Hossain, J. Li, J. Y. Lin, and H. X. Jiang, “Growth and characterization of high-quality Zr doped AlN epilayers,” Appl. Phys. Lett. 126, 022106 (2025).  doi: 10.1063/5.0250015 Ι PDF


5.   J. Li, A. Tingsuwatit, Z. Alemoush, J. Y. Lin, and H. X. Jiang, “Ultrawide bandgap semiconductor h-BN for direct detection of fast neutrons,” APL Materials 13, 011101 (2025).  doi: 10.1063/5.0232896 Ι PDF


      ————     Year 2024


6.   J. Li, J. Y. Lin, and H. X. Jiang, “Fundamental optical transitions in hexagonal boron nitride epilayers,” APL Materials 12, 111115 (2024).  doi: 10.1063/5.0234673 Ι PDF


7.   N. K. Hossain, A. Tingsuwatit, Z. Alemoush, M. Almohammad, J. Li, J. Y. Lin, and H. X. Jiang, “Probing room temperature indirect and minimum direct band gaps of h-BN,” Applied Physics Express 17, 091001 (2024).  doi: 10.35848/1882-0786/ad777a Ι PDF


8.   Z. Alemoush, A. Tingsuwatit, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Status of h-BN quasi-bulk crystals and high efficiency neutron detectors,” J. Appl. Phys. 135, 175704 (2024).  doi: 10.1063/5.0179610 Ι PDF


9.   A. Tingsuwatit, N. K. Hossain, Z. Alemoush, M. Almohammad, J. Li, J. Y. Lin, and H. X. Jiang, “Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors ,” Appl. Phys. Lett. 124, 162105 (2024).  doi: 10.1063/5.0202750 Ι PDF


10.   M. Almohammad, Z. Alemoush, J. Li, J. Y. Lin, and H. X. Jiang, “Carbon-related donor–acceptor pair transition in the infrared in h-BN ,” Appl. Phys. Lett. 124, 102106 (2024).  doi: 10.1063/5.0196810 Ι PDF


      ————     Year 2023


11.   M. Almohammad, A. Tingsuwatit, Z. Alemoush, J. Li, J. Y. Lin, and H. X. Jiang, “Probing and controlling oxygen impurity diffusion in h-BN semi-bulk crystals ,” Appl. Phys. Lett. 123, 252106 (2023).  doi: 10.1063/5.0164457 Ι PDF


12.  Hongxing Jiang, Changzhi Li, Jing Li, Jingyu Lin, “Semiconductor optical phased arrays and methods related thereto,” US patent 11,747,658 B2. Semiconductor optical phased arrays (OPA's) and methods related thereto Ι PDF


13.  Z. Alemoush, A. Tingsuwatit, J. Li, J. Y. Lin, and H. X. Jiang, “Probing boron vacancy complexes in h-BN semi-bulk crystals synthesized by hydride vapor phase epitaxy”, Crystals 13, 1319 (2023).  doi.org/10.3390/cryst13091319 Ι PDF


14.  Hongxing Jiang, Zhenyu Sun, Yaqiong Yan, Jing Li, and Jingyu Lin, “Optical Gain Materials for High Energy Lasers and Laser Illuminators and Methods of Making and Using Same” US patent application 2023/0223741 (Date of patent: 07/13/2023). PDF


15.   Hongxing Jiang and Jingyu Lin, “How we made the microLED,” Nature Electronics 6, 257 (2023); reverse engineering article invited by Nat Electron editors.  doi: 10.1038/s41928-023-00940-0 Ι PDF


16.   Z. Alemoush, N. K. Hossain, A. Tingsuwatit, M. Almohammad, J. Li, J. Y. Lin, and H. X. Jiang, “Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy ,” Appl. Phys. Lett. 122, 012105 (2023).  doi: 10.1063/5.0134858 Ι PDF


17.   Yuji Zhao, Mingfei Xu, Xuanqi Huang, Justin Lebeau, Tao Li, Dawei Wang, Houqiang Fu, Kai Fu, Xinqiang Wang, Jingyu Lin, and Hongxing Jiang, “Toward High Efficiency at High Temperatures: Recent Progress and Prospects on InGaN-Based Solar Cells,” Materials Today Energy, 31, 101229, (2023).  doi: doi.org/10.1016/j.mtener.2022.101229


      ————     Year 2022

18.   T. B. Smith, Y. Q. Yan, W. P. Zhao, J. Li, J. Y. Lin, and H. X. Jiang, “Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures,” Appl. Phys. Lett. 121, 192110 (2022).  doi: 10.1063/5.0121910 Ι PDF


19.  Hongxing Jiang, Changzhi Li, Jing Li, and Jingyu Lin, “Semiconductor optical phased arrays and methods related thereto,” US patent 11,460,723 (Date of patent: 10/04/2022). PDF


20.  A. Tingsuwatit, J. Li, J. Y. Lin, and H. X. Jiang, “Probing the bandgap and effects of t-BN domains in h-BN neutron detectors,” Applied Physics Express. 15, 101003 (2022).  doi: 10.35848/1882-0786/ac917a.  PDF


21.  A. Tingsuwatit, A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Boron nitride neutron detector with the ability for detecting both thermal and fast neutron,” Appl. Phys. Lett. 120, 232103 (2022).  doi: 10.1063/5.0093591.  PDF


22.  S. J. Grenadier, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of unique band structure of h-BN probed by photocurrent excitation spectroscopy,” Applied Physics Express. 15, 051005 (2022).  doi: 10.35848/1882-0786/ac6b83.  PDF


23.  N. Khan, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “A conductive AFM study of carbon‑rich hexagonal (BN)C semiconductor alloys,” MRS Communications 12, 223 (2022).  doi: 10.1557/s43579-022-00166-9.  PDF


24.  Y. Q. Yan, J. Li, J. Y. Lin, and H. X. Jiang, “Effect of polarization field on optical transitions and selection rules in Er doped GaN,” Optical Materials Express. page 12, 122 (2022).  doi: 10.1364/OME.448156.  PDF


25.  Y. Q. Yan, J. Li, J. Y. Lin, and H. X. Jiang, “Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystals,” Appl. Phys. Lett. 120, 052103 (2022).  doi: 10.1063/5.0077742 Ι PDF



      ————     Year 2021

26.  Hongxing Jiang, Jingyu Lin, Jing Li, Avisek Maity, Sam Grenadier, “Solid-state neutron detectors,” US patent 11,195,968 B2. PDF


27.   M. Almohammad, J. Li, J. Y. Lin, and H. X. Jiang, “Charge collection and trapping mechanisms in hexagonal borron nitride epilayers,” Appl. Phys. Lett. 119, 221111 (2021).  doi: 10.1063/5.0074409 Ι PDF


28.   S. J. Grenadier, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical Transport Properties of Hexagonal Boron Nitride Epilayers,” Chapter 12 in “Ultrawide Bandgap Semiconductors,” Volume 107 in SEMICONDUCTORS AND SEMIMETALS (2021), edited by Yuji Zhao. Hardcover ISBN: 9780128228708.  ScienceDirect Ι PDF


29.   H. X. Jiang and J. Y. Lin, “Development of nitride microLEDs and displays,” Chapter 1 in “Micro LEDs,” Volume 106 in SEMICONDUCTORS AND SEMIMETALS, edited by H. X. Jiang and J. Y. Lin, Academic Press (an imprint of Elsevier), 1st Edition (2021). ISBN: 9780128230411.  Elsevier


30.   H. X. Jiang and J. Y. Lin, “Micro LEDs,” Volume 106 in SEMICONDUCTORS AND SEMIMETALS, edited by H. X. Jiang and J. Y. Lin, Academic Press, Hardcover ISBN: 9780128230411, 1st Edition, June (2021). ISBN: 9780128230411.  Elsevier


31.   M. A. McKay, H. A. Al-Atabi, J. Li, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Band structure and ultraviolet optical transitions in ErN,” Appl. Phys. Lett. 118, 131108 (2021).  doi: 10.1063/5.0046580 Ι PDF


32.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride: Epitaxial growth and device applications,” Prog. Quantum. Electron. 76 100302 (2021).  doi: 10.1016/j.pquantelec.2020.100302 Ι PDF


33.   J. Li, A. Maity, S. J. Grenadier, J. Y. Lin, and H. X. Jiang, “Charge collection in h-BN neutron detectors at elevated temperatures," Appl. Phys. Lett. 118, 092102 (2021).  doi: 10.1063/5.0044159 Ι PDF



      ————     Year 2020

34.   H. X. Jiang, J. Y. Lin, Jing Li, A. Maity, and S. J. Grenadier, “Solid-state neutron detectors,” US Patent 10,714,651 B2 (2020).  PDF


35.   Y. Q. Yan, T. B. Smith, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium energy levels in GaN grown by hydride vapor phase epitaxy,” AIP Advances 10, 125006 (2020).  doi: 10.1063/5.0028470 Ι PDF


36.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells,” Chapter 20 in “Wide Bandgap Semiconductor-Based Electronics,” edited by Fan Ren and Stephen J Pearton, IOP Publishing, Bristol, UK (2020). PDF


37.   Z. Y. Sun, H. L. Gong, Y. Q. Yan, T. B. Smith, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization-resolved Er emission in Er doped GaN bulk crystals,” J. Appl. Phys. 127, 243107 (2020).  doi: 10.1063/5.0012969 Ι PDF


38.   M. A. McKay, Q. W. Wang, H. A. Al-Atabi, Y. Q. Yan, J. Li, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Band structure and infrared optical transitions in ErN,” Appl. Phys. Lett. 116, 171104 (2020).  doi: 10.1063/5.0006312 Ι PDF


39.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “High efficiency hexagonal boron nitride neutron detectors with 1 cm² detection areas,” Appl. Phys. Lett. 116, 142102 (2020).  doi: 10.1063/1.5143808 Ι PDF


40.   J. Y. Lin and H. X. Jiang, “Development of microLED,” Appl. Phys. Lett. 116, 100502 (2020).  doi: 10.1063/1.5145201 Ι PDF


41.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Probing the surface oxidation process in hexagonal boron nitride epilayers,” AIP Advances 10, 025213 (2020).  doi: 10.1063/1.5134993 Ι PDF


42.   V. X. Ho, Y. Wang, B. Ryan, L. Patrick, H. X. Jiang, J. Y. Lin, and N. Q. Vinh, “Observation of optical gain in Er-Doped GaN epilayers,” J. Lumin. 221, 117090 (2020).  doi: 10.1016/j.jlumin.2020.117090 Ι PDF


43.   M. A. McKay, J. Li, J. Y. Lin, and H. X. Jiang, “Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry,” J. Appl. Phys. 127, 0531032 (2020).  doi: 10.1063/1.5134908 Ι PDF


44.   B. Mitchell, D. Timmerman, W. Zhu, J. Y. Lin, H. X. Jiang, J. Poplawsky, R. Ishii, Y. Kawakami, V. Dierolf, J. Tatebayashi, S. Ichikawa, and Y. Fujiwara, “Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology,” J. Appl. Phys. 127, 013102 (2020).  doi: 10.1063/1.5134050 Ι PDF


          ————     Year 2019


45.   S. J. Grenadier, A. Maity, J. Li , J. Y. Lin , and H. X. Jiang, “Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers,” Appl. Phys. Lett. 115, 072108 (2019).  doi: 10.1063/1.5097984 Ι PDF


46.   Y. Q. Yan , Z. Y. Sun, W. P. Zhao, J. Li , J. Y. Lin , and H. X. Jiang, “Optical properties of GaN/Er:GaN/GaN core–cladding planar waveguides,” Appl. Phys. Expr. 12, 075505 (2019).  doi: 10.7567/1882-0786/ab2730 Ι PDF


47.   Z. Y. Sun, Y. Q. Yan , T. B. Smith, W. P. Zhao, J. Li , J. Y. Lin , and H. X. Jiang, “Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides,” Appl. Phys. Lett. 114, 222105 (2019).  doi: 10.1063/1.5093942 Ι PDF


48.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “High sensitivity hexagonal boron nitride lateral neutron detectors,” Appl. Phys. Lett. 114, 222102 (2019).  doi: 10.1063/1.5098331 Ι PDF


49.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Critical thickness of hexagonal GaBN/BN heterostructures,” J. Appl. Phys. 125, 205703 (2019).  doi: 10.1063/1.5098796 Ι PDF


50.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Effects of surface recombination on the charge collection in h-BN neutron detectors,” J. Appl. Phys. 125, 104501 (2019).  doi: 10.1063/1.5089138 Ι PDF


51.   Q. W. Wang, M. R. Uddin, X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells,” Appl. Phys. Expr. 12, 011002 (2019).  doi: 10.7567/1882-0786/aaee8d Ι PDF


          ————     Year 2018


52.   Z. Y. Sun, Y. Q. Yan, W. P. Zhao, J. Li, J. Y. Lin, and H. X. Jiang, “Resonant excitation cross-sections of erbium in freestanding GaN bulk crystals,” Appl. Phys. Lett. 112, 202103 (2018).  doi: 10.1063/1.5030347 Ι PDF


53.   S. J. Grenadier, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Origin and roles of oxygen impurities in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 112, 162103 (2018).  doi: 10.1063/1.5026291 Ι PDF


54.  * Z. Y. Sun, Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium-doped GaN bulk crystals as a gain medium for eye-safe high energy lasers,” Proc. SPIE 10528, Optical Components and Materials XV, 105280E (2018); invited.   doi: 10.1117/12.2293166 Ι PDF


55.   V. X. Ho, T. M. Al tahtamouni, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Room-temperature lasing action in GaN quantum wells in the infrared 1.5 μm region,” ACS Photonics 5, 1303 (2018).  doi: 10.1021/acsphotonics.7b01253 Ι PDF


56.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride neutron detectors with high detection efficiencies,” J. Appl. Phys. 123, 044501 (2018).  doi: 10.1063/1.5017979 Ι PDF

          ————     Year 2017



57.   X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride,” Appl. Phys. Lett. 111, 132106 (2017).  doi: 10.1063/1.4994070 Ι PDF


58.  * A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “High-efficiency and high-sensitivity thermal neutron detectors based on hexagonal BN epilayers,” Proc. SPIE 10392, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIX, 103920L (2017). doi: 10.1117/12.2271556 Ι PDF


59.   S. Liu, R. He, Z. Ye, X. Z. Du, J. Y. Lin, H. X. Jiang, B. Liu, and J. H. Edgar, “Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe−Cr Flux,” Cryst. Growth Des. 17, 4932 (2017).  doi: 10.1021/acs.cgd.7b00871 Ι PDF


60.   Z. Y. Sun, L. C. Tung, W. P. Zhao, J. Li, J. Y. Lin, and H. X. Jiang, “Excitation and emission mechanisms of Er:GaN gain medium in 1.5 µm region,” Appl. Phys. Lett. 111, 072109 (2017).  doi: 10.1063/1.4985726 Ι PDF


61.   J. Yang, F. Ren, R. Khanna, K. Bevlin, D. Geerpuram, L-C. Tung, J. Y. Lin, H. X. Jiang, J. Lee, E. Flitsiyan, L. Chernyak, S. J. Pearton, and A. Kuramata, “Annealing of dry etch damage in metallized and bare (-201) Ga₂O₃,” J. Vac. Sci. Technol. B 35, 051201 (2017).  doi: 10.1116/1.4986300 Ι PDF


62.   A. Maity, S. J. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors,” Appl. Phys. Lett. 111, 033507 (2017).  doi: 10.1063/1.4995399 Ι PDF


63.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Response of alpha particles in hexagonal boron nitride neutron detectors,” Appl. Phys. Lett. 110, 213502 (2017).  doi: 10.1063/1.4984112 Ι PDF


64.   M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Probing carbon impurities in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 110, 182107 (2017).  doi: 10.1063/1.4982647 Ι PDF


65.   X. Z. Du, M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Layer number dependent optical properties of multilayer hexagonal BN epilayers,” Appl. Phys. Lett. 110, 092102 (2017).  doi: 10.1063/1.4977425 Ι PDF


66.   S. Butler, H. X. Jiang, J. Y. Lin, and A. Neogi, “Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity,” Advanced Optical Materials, 1600804 (2017).  doi: 10.1002/adom.201600804 Ι PDF


67.   V. X. Ho, S. P. Dail, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD,” MRS Advances, 2, 135 (2017).  doi: 10.1557/adv.2017.27 Ι PDF


68.   V. X. Ho, T. V. Dao, H. X. Jiang, J. Y. Lin, J. M. Zavada, S. A. McGill, and N. Q. Vinh, “Photoluminescence quantum efficiency of Er optical centers in GaN epilayers,” Nature Scientific Reports 7, 39997 (2017).  doi: 10.1038/srep39997 Ι PDF


69.   H. X. Jiang and J. Y. Lin, “Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications,” ECS J. Solid State Sci. Technol. 6, Q3012 (2017).  doi: 10.1149/2.0031702jss Ι PDF

 ————     Year 2016


70.   Q. W. Wang, J. Li, J. Y. Lin, and H. X. Jiang, “Enhancement of 1.5 μm emission under 980nm resonant excitation in Er and Yb co-doped GaN epilayers,” Appl. Phys. Lett. 109, 152103 (2016).  doi: 10.1063/1.4964843 Ι PDF


71.   T. M. Al tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, “Current injection 1.54 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells,” Optical Materials Express 6, 3476 (2016).  doi: 10.1364/OME.6.003476 Ι PDF


72.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy,” Appl. Phys. Lett. 109, 122101 (2016).  doi: 10.1063/1.4963128 Ι PDF


73.  * T. C. Doan, A. Maity, J. Li, J. Y. Lin, and H. X. Jiang, “Thermal neutron detectors based on hexagonal boron nitride epilayers,” Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 99680S (2016); invited.   doi:10.1117/12.2239079 Ι PDF


74.   A. Maity, T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Realization of highly efficient hexagonal boron nitride neutron detectors,” Appl. Phys. Lett. 109, 072101 (2016).  doi: 10.1063/1.4960522 Ι PDF Ι News


75.   Z. Y. Sun, J. Li, W. P. Zhao, J. Y. Lin, and H. X. Jiang, “Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers,” Appl. Phys. Lett. 109, 052101 (2016).  doi: 10.1063/1.4960360 Ι PDF


76.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors,” AIP Advances 6, 075213 (2016).  doi: 10.1063/1.4959595 Ι PDF


77.  * D. K. George, M. D. Hawkins, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Optical excitation of Er centers in GaN epilayers grown by MOCVD,” Proc. SPIE 9744, Optical Components and Materials XIII, 97440V (2016); invited.  doi: 10.1117/12.2209695 Ι PDF


78. N. Napal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, and J. M. Zavada, "MOCVD growth of Er-doped III-N and optical-magnetic characterization," Chapter 7 in "Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics," edited by V. Dierolf, I. T. Ferguson, and J. M. Zavada, Woodhead Publishing, Elsevier, 2016, pp. 225-255.


79.   J. Li, X. K. Cao, T. B. Hoffman, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Nature of exciton transitions in hexagonal boron nitride,” Appl. Phys. Lett. 108, 122101 (2016).  doi: 10.1063/1.4944696 Ι PDF


80.   X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origins of near band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 108, 052106 (2016).  doi: 10.1063/1.4941540 Ι PDF

 ————     Year 2015


81.  * H. X. Jiang and J. Y. Lin, “InGaN/GaN multiple quantum well solar cells for energy and hydrogen generation,” ECS Transactions 66, 129 (2015); invited.  doi: 10.1149/06601.0129ecst Ι PDF


82.   D. K. George, M. D. Hawkins, M. McLaren, H. X. Jiang, J. Y. Lin, J. M. Zavada, and N. Q. Vinh, “Excitation mechanisms of Er optical centers in GaN epilayers,” Appl. Phys. Lett. 107, 171105 (2015).   doi: 10.1063/1.4934760 Ι PDF


83.   M. R. Uddin, J. Li, J. Y. Lin, and H. X. Jiang, “Carbon-rich hexagonal (BN)C alloys,” J. Appl. Phys. 117, 215703 (2015).   doi: 10.1063/1.4921931 Ι PDF


84.   A. T. Connie, S. Zhao, S. Md. Sadaf, I. Shih, Z. Mi, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy,” Appl. Phys. Lett. 106, 213105 (2015).  doi: 10.1063/1.4921626 Ι PDF


85.   J. H. Seo, J. Li, J. Lee, S. Gong, J. Y. Lin, H. X. Jiang, and Z. Ma, “A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate,” IEEE Photonics Journal, 7, 8200207 (2015).   doi: 10.1109/JPHOT.2015.2412459 Ι PDF


86.   T. M. Al tahtamouni, M. Stachowicz, J. Li, J. Y. Lin, and H. X. Jiang, “Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures,” Appl. Phys. Lett. 106, 121106 (2015).  doi: 10.1063/1.4916393 Ι PDF


87.   T. C. Doan, S. Majety, S. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products,” Nuclear Inst. and Methods in Physics Research Section A 783, 121 (2015).  doi: 10.1016/j.nima.2015.02.045 Ι PDF


88.   T. M. Al tahtamouni, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition,” Optical Materials Express 5, 648 (2015).  doi: 10.1364/OME.5.000648 Ι PDF


89.   D. W. Jeon, Z. Y. Sun, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium doped GaN synthesized by hydride vapor-phase epitaxy,” Optical Materials Express 5, 596 (2015).  doi: 10.1364/OME.5.000596 Ι PDF


90.   T. M. Al tahtamouni, X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition,” Optical Materials Express 5, 274 (2015).  doi: 10.1364/OME.5.000274 Ι PDF


91.   X. Z. Du, J. Li, J. Y. Lin, and H. X. Jiang, “The origin of deep-level impurity transitions in hexagonal boron nitride,” Appl. Phys. Lett. 106, 021110 (2015).  doi: 10.1063/1.4905908 Ι PDF


92.   T. N. Oder, J. Y. Lin, and H. X. Jiang, "III-nitride photonics crystals for lighting applications," Chapter 6 in "Handbook of Microcavities", Pan Stanford Publishing, 2015, ISBN 978-981-4463-24-9 (Hardcover), 978-981-4463-25-6 (ebook).

 ————     Year 2014


93.   T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Charge carrier transport properties in layer structured hexagonal boron nitride,” AIP Advances 4, 107126 (2014).  doi: 10.1063/1.4898630 Ι PDF


94.   M. R. Uddin, T. C. Doan, J. Li, K. S. Ziemer, J. Y. Lin, and H. X. Jiang, “Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys,” AIP Advances 4, 087141 (2014).  doi: 10.1063/1.4894451 Ι PDF


95.   S. Alajlouni, Z. Y. Sun, J. Li, J. M. Zavada, J. Y. Lin, and H. X. Jiang, “Refractive index of erbium doped GaN thin films,” Appl. Phys. Lett. 105, 081104 (2014).  doi: 10.1063/1.4893992 Ι PDF


96.  R. Hui, R. Xie, I. W. Feng, Z. Y. Sun, J. Y. Lin, and H. X. Jiang, “Excitation cross section of erbium-doped GaN waveguides under 980nm optical pumping,” Appl. Phys. Lett. 105, 051106 (2014).  doi: 10.1063/1.4892427 Ι PDF


97.  M. Stachowicz, A. Kozanecki, C. -G. Ma, M. G. Brik, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Crystal field analysis of rare-earth ions energy levels in GaN,” Optical Materials 37, 165 (2014).  doi: 10.1016/j.optmat.2014.05.018 Ι PDF


98.  J. H. Edgar, T. B. Hoffman, B. Clubine, M. Currie, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique,” J. Crystal Growth 403, 110 (2014).  doi: 10.1016/j.jcrysgro.2014.06.006 Ι PDF


99.  H. X. Jiang, and J. Y. Lin, “Hexagonal boron nitride for deep ultraviolet photonic devices,” (in special section "Deep UV LEDs", Guest editors: Jung Han, Hiroshi Amano and Leo Scholwalter), Semicon. Sci. Technol. 29, 084003 (2014), Invited review.  doi: 10.1088/0268-1242/29/8/084003 Ι PDF


100.   L. B. Tang, R. B. Ji, X. M. Li, G. X. Bai, C. P. Liu, J. H. Hao, J. Y. Lin, H. X. Jiang, K. S. Teng, Z. B. Yang, and S. P. Lau, “Deep Ultraviolet to Near-Infrared Emission and Photoresponse in Layered N‑Doped Graphene Quantum Dots,” ACS NANO 8, 6312 (2014).  doi: 10.1021/nn501796r Ι PDF


101.   Q. Wang, S. Zhao, A. T. Connie, I. Shih, Z. Mi, T. Gonzalez, M. P. Andrews, X. Z. Du, J. Y. Lin, and H. X. Jiang, “Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates,” Appl. Phys. Lett. 104, 223107 (2014).  doi: 10.1063/1.4881558 Ι PDF


102.   T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes,” AIP Advances 4, 047122 (2014).  doi: 10.1063/1.4871996 Ι PDF


103.   R. Dahal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis,” Appl. Phys. Lett. 104, 143901 (2014).  doi: 10.1063/1.4871105 Ι PDF


104.   M. Stachowicz, A. Kozanecki, J. Y. Lin, H. X. Jiang, and J. Zavada, “Probing of local alloy disorder in InGaN using Er³⁺ ions,” Optical Materials 36, 1730 (2014).  doi: 10.1016/j.optmat.2014.02.013 Ι PDF


105.   M. R. Uddin, S. Majety, J. Li, J. Y. Lin, and H. X. Jiang, “Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties,” J. Appl. Phys. 115, 093509 (2014).  doi: 10.1063/1.4867641 Ι PDF


106.   T. C. Doan, S. Majety, S. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers,” Nuclear Inst. and Methods in Physics Research Section A 748, 84 (2014).  doi: 10.1016/j.nima.2014.02.031 Ι PDF


107.   X. Z. Du, C. D. Frye, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence ,” J. Appl. Phys. 115, 053503 (2014).  doi:10.1063/1.4863823 Ι PDF

 ————     Year 2013


108.   S. Majety, T. C. Doan, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical transport properties of Si-doped hexagonal boron nitride epilayers,” AIP Advances 3, 122116 (2013).  doi:10.1063/1.4860949 Ι PDF


109.   X. K. Cao, B. Clubine, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “Two-dimensional excitons in three-dimensional hexagonal boron nitride,” Appl. Phys. Lett. 103, 191106 (2013).  doi:10.1063/1.4829026 Ι PDF


110.   S. Grenadier, J. Li, J. Y. Lin, and H. X. Jiang, “Dry etching techniques for active devices based on hexagonal boron nitride epilayers,” J. Vac. Sci. Technol. A 31, 061517 (2013).  doi:10.1116/1.4826363 Ι PDF


111.   I. W. Feng, S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, “SiO₂/TiO₂ distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation,” J. Vac. Sci. Technol. A 31, 061514 (2013).  doi:10.1116/1.4823705 Ι PDF


112.  I. W. Feng, W. P. Zhao, J. Li, J. Y. Lin, H. X. Jiang, and J. Zavada, “Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides,” Applied Optics 52, 5426 (2013).  doi:10.1364/AO.52.005426 Ι PDF


113.  S. Majety, J. Li, W. P. Zhao, B. Huang, S. H. Wei, J. Y. Lin, and H. X. Jiang, “Hexagonal boron nitride and 6H-SiC heterostructures,” Appl. Phys. Lett. 102, 213505(2013).  doi:10.1063/1.4808365 Ι PDF


114.  H. X. Jiang and J. Y. Lin, “Nitride micro-LEDs and beyond - a decade progress review,”Optics Express 21, A475 (2013) (invited). doi:10.1364/OE.21.00A475 Ι PDF


115.  T. Tong, D. Fu, A. X. Levander, W. J. Schaff, B. N. Pantha, N. Lu, B. Liu, I. Ferguson, R. Zhang, J. Y. Lin, H. X. Jiang, J. Wu, and David G. Cahill, “Suppression of thermal conductivity in In_xGa_1−xN alloys by nanometer-scale disorder,” Appl. Phys. Lett. 102, 121906 (2013). doi:10.1063/1.4798838 Ι PDF


116.  * X. K. Cao, S. Majety, J. Li, J. Y. Lin and H. X. Jiang, “Optoelectronic properties of hexagonal boron nitride epilayers,” Proc. SPIE 8631, 863128 (2013); invited.  doi:10.1117/12.2009115 Ι PDF


117.  T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang, “Effects of double layer AlN buffer layers on properties of Si-doped Al_xGa_1−xN for improved performance of deep ultraviolet light emitting diodes,” J. Appl. Phys.113, 123501 (2013). doi:10.1063/1.4798239 Ι PDF


118.  I. W. Feng, Jing Li, J. Y. Lin, H. X. Jiang and J. Zavada, “Optical excitation cross section of erbium in GaN,” Applied Optics 52, 61132 (2013). doi:10.1364/AO.52.001132 Ι PDF

 ————     Year 2012


119.  T. M. Al tahtamouni, J. Y. Lin, and H. X. Jiang,“High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors,” Appl. Phys. Lett.101, 192106 (2012). doi:10.1063/1.4766732 Ι PDF


120.  * S. Majety, J. Li, X. K. Cao, R. Dahal, J. Y. Lin, H. X. Jiang,“Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers,” Proc. SPIE 8507, 85070R (2012). doi:10.1117/12.940748 Ι PDF


121.  J. Li, S. Majety, R. Dahal, W. P. Zhao, J. Y. Lin, and H. X. Jiang, “Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers,” Appl. Phys. Lett. 101, 171112 (2012). doi:10.1063/1.4764533 Ι PDF


122.  B. Huang, X. K. Cao, H. X. Jiang, J. Y. Lin, and S. H. Wei, “Origin of the significantly enhanced optical transitions in layered boron nitride,” Physical Review B 86, 155202 (2012). doi:10.1103/PhysRevB.86.155202 Ι PDF


123.  I. W. Feng, J. Li, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Effects of growth pressure on erbium doped GaN infrared emitters synthesized by metal organic chemical vapor deposition,” Optical Materials Express 2, 1095 (2012). doi:10.1364/OME.2.001095 Ι PDF


124.  C. Ugolini, I. W. Feng, A. Sedhain, J. Y. Lin, H. X. Jiang and J. M. Zavada, “Formation energy of optically active Er³⁺ centers in Er doped GaN,” Appl. Phys. Lett. 101, 051114 (2012). doi:10.1063/1.4742196 Ι PDF


125.  S. Majety, X. K. Cao, J. Li, R. Dahal, J. Y. Lin and H. X. Jiang, “Band-edge transitions in hexagonal boron nitride epilayers,” Appl. Phys. Lett. 101, 051110 (2012). doi:10.1063/1.4742194 Ι PDF


126.  T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett. 101, 042103 (2012). doi:10.1063/1.4737941 Ι PDF


127.  L. B. Tang, R. B. Ji, X. K. Cao, J. Y. Lin, H. X. Jiang, X. M. Li, K. S. Teng, C. M. Luk, S. J. Zeng, J. H. Hao, and S. P. Lau, “Deep Ultraviolet Photoluminescence of Water-Soluble Self-Passivated Graphene Quantum Dots,” ACS Nano. 6, 5102 (2012). doi:10.1021/nn300760g Ι PDF


128.  T. M. Al Tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, “Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates,” J. Phys. D: Appl. Phys. 45, 285103 (2012). doi:10.1088/0022-3727/45/28/285103 Ι PDF


129.  A. Sedhain, J. Y. Lin, and H. X. Jiang, “Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN,” Appl. Phys. Lett. 100, 221107 (2012). doi:10.1063/1.4723693 Ι PDF


130. * S. Majety, X. K. Cao, R. Dahal, B. N. Pantha, J. Li, J. Y. Lin and H. X. Jiang, “Semiconducting hexagonal boron nitride for deep ultraviolet photonics,” Proc. SPIE 8268, 82682R (2012). ; invited. doi:10.1117/12.914084 Ι PDF


131. * J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin and H. X. Jiang, “Full-Scale Self-Emissive Blue and Green Microdisplays Based on GaN Micro-LED Arrays,” Proc. SPIE 8268, 82681X (2012). ; invited. doi:10.1117/12.914061 Ι PDF


132. B. N. Pantha, J. Y. Lin, and H. X. Jiang, "High qaulity Al-rich AlGaN alloys," Chapter 2 in GaN and ZnO-based Materials and Devices, edited by S.J. Pearton, published in February 2012 by Springer, Springer Series in Materials Science (ISBN: 978-3-642-23520-7).


133. S. Majety, J. Li, X. K. Cao, R. Dahal, B. N. Pantha, J. Y. Lin, and H. X. Jiang, "Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics," Appl. Phys. Lett. 100, 061121 (2012).doi:10.1063/1.3682523 Ι PDF


134. M. L. Nakarmi, B. Cai, J. Y. Lin, and H. X. Jiang, "Three-step growth method for high quality AlN epilayers," Phys. Status Solidi A 209, No. 1, 126 (2012).doi:10.1002/pssa.201127475 Ι PDF

 ————     Year 2011


135. J. Y. Lin, J. Day, J. Li, D. Lie, C. Bradford, and H. X. Jiang, "High-resolution group III nitride microdisplays," SPIE Newsroom, Dec. issue (2011).doi: 10.1117/2.1201112.004001 Ι PDF


136. N. T. Woodward, N. Nepal, B. Mitchell, I. W. Feng, J. Li, H. X. Jiang, J. Y. Lin, J. M. Zavada, and V. Dierolf,"Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields," Appl. Phys. Lett. 99, 122506 (2011). doi:10.1063/1.3643041 Ι PDF


137. Q. Wang, R. Dahal, I.-W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui,"Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition ," Appl. Phys. Lett. 99, 121106 (2011). doi:10.1063/1.3636418 Ι PDF


138. X. Wang, C. Timm, X. M. Wang, W. K. Chu, J. Y. Lin, H. X. Jiang and J. Z. Wu,"Metastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire," Journal of Superconductivity and Novel Magnetism 24, 2123 (2011). doi:10.1007/s10948-011-1165-x Ι PDF


139. H.X. Jiang and J.Y. Lin, "Semiconductor lasers: Expanding into blue and green," Nature Photonics 5, 521 (2011). doi:10.1038/nphoton.2011.210 Ι PDF


140. * K. Aryal, I. W. Feng, B. N. Pantha, J. Li, J. Y. Lin and H. X. Jiang,"Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications," MRS Proceedings 1325, mrss11-1325-e07-08 (2011). doi:10.1063/1.3643041 Ι PDF


141. A. Konopka, S. Greulich-Weber, V. Dierolf, H. X. Jiang, U. Gerstmann, E. Rauls, S. Sanna and W.G. Schmidt, "Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors," Optical Materials 33, 1041 (2011). doi:10.1016/j.optmat.2010.12.005 Ι PDF


142. B.N. Pantha, H. Wang, N.Khan, J.Y. Lin, and H.X. Jiang, "Origin of background electron concentration in In_xGa_1−xN alloys," Phys. Rev. B 84, 075327 (2011). doi:10.1103/PhysRevB.84.075327 Ι PDF


143. J. Li, R. Dahal, S. Majety, J.Y. Lin, and H.X. Jiang, "Hexagonal boron nitride epitaxial layers as neutron detector materials," Nuclear Inst. and Methods in Physics Research Section A 654, 417 (2011). doi:10.1016/j.nima.2011.07.040 Ι PDF


144. Jacob Day, J. Li, D.Y.C. Lie, Charles Bradford, J.Y. Lin, and H.X. Jiang, "III-Nitride full-scale high-resolution microdisplays," Appl. Phys. Lett. 99, 031116 (2011). doi:10.1063/1.3615679 Ι PDF


145. R. Dahal, J. Li, S. Majety, B.N. Pantha, X.K. Cao, J.Y. Lin, and H.X. Jiang, "Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material," Appl. Phys. Lett. 98, 211110 (2011). doi:10.1063/1.3593958 Ι PDF (also selected by Virtual Journal of Nanoscale Science & Technology under Graphene, Carbon Nanotubes, C60, and related studies)


146. A. Sedhain, J.Y. Lin, and H.X. Jiang, "AlN - properties and applications," Chapter 3 in "Handbook of Luminesent semiconductor materials," edited by L. Bergman and J.L. McHale, published by CRC Press (Boca Raton 2011).


147. B.N. Pantha, I.W. Feng, K. Aryal, J. Li, J.Y. Lin, and H.X. Jiang, "Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials," Appl. Phys. Express. 4, 051001(2011). doi:10.1143/APEX.4.051001 Ι PDF


148. I.W. Feng, X.K. Cao, J. Li, J.Y. Lin, H.X. Jiang, N. Sawaki, Y. Honda, T. Tanikawa, and J. M. Zavada, "Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates," Appl. Phys. Lett. 98 081102 (2011). doi:10.1063/1.3556678 Ι PDF


149. R. Dahal, J.Y. Lin, H.X. Jiang and J.M. Zavada, "Near infrared photonic devices based on Er-doped GaN and InGaN," Optical Materials, 33, 1066 (2011). doi:10.1016/j.optmat.2010.10.002 Ι PDF


150. N. Woodwarda, V. Dierolfa, J.Y. Lin, H.X. Jiang and J.M. Zavada, "Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers," Optical Materials, 33,1059 (2011). doi:10.1016/j.optmat.2010.07.007 Ι PDF

 ————     Year 2010


151. J. Li, J. Y. Lin, H. X. Jiang, and N. Sawaki, "III-Nitrides on Si Substrates," Chapter 3 in III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, edited by T. Li, M. Mastro and A. Dadgar, published by CRC Press (Boca Raton 2010).


152. Q. Wang, R. Hui, R. Dahal, J.Y. Lin and H.X. Jiang, "Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength," Appl. Phys. Lett. 97, 241105 (2010). doi:10.1063/1.3527089 Ι PDF


153. R. Dahal, C. Ugolini, J.Y. Lin, H.X. Jiang and J.M. Zavada, "1.54 μm emitters based on erbium doped InGaN p-i-n junctions," Appl. Phys. Lett. 97, 141109, (2010). doi:10.1063/1.3499654 Ι PDF


154. R. Dahal, J. Y. Lin, H. X. Jiang, and J. Zavada "Er doped In_xGa_1-xN for optical communications," Chapter 5 in Rare-earth doped III-Nitrides for Optoelectronic and Spintronic Applications, edited by K O’Donnell & V Dierolf, published by Canopus Academic Publishing Ltd and Springer SBM (2010). doi:10.1007/978-90-481-2877-8_5


155. R. Dahal, J. Li, K. Aryal, J. Y. Lin, and H. X. Jiang, "InGaN/GaN multiple quantum well concentrator solar cells," Appl. Phys. Lett. 97, 073115 (2010). doi:10.1063/1.3481424 Ι PDF


156. B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, "Evolution of phase separation in In-rich InGaN alloys," Appl. Phys. Lett. 96, 232105 (2010). doi:10.1063/1.3453563 Ι PDF


157. B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, "Probing the relationship between structural and optical properties of Si-doped AlN," Appl. Phys. Lett. 96, 131906 (2010). doi:10.1063/1.3374444 Ι PDF


158. A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, "Nature of deep center emissions in GaN," Appl. Phys. Lett. 96, 151902 (2010). doi:10.1063/1.3389497 Ι PDF


159. I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, "Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers," Appl. Phys. Lett. 96, 031908 (2010). doi:10.1063/1.3295705 Ι PDF


160. K. Aryal, B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, "Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells," Appl. Phys. Lett. 96, 052110 (2010). doi:10.1063/1.3304786 Ι PDF


161. * B N. Pantha, J. Y. Lin, and H. X. Jiang, “III-nitride nanostructures for energy generation,” Proc. SPIE 7608, 76081I (2010). ; invited. doi:10.1117/12.840726 Ι PDF


162. * B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Achieving p-In_xGa_1-xN alloys with high In contents,” Proc. SPIE 7602, 76020Z (2010). doi:10.1117/12.842313 Ι PDF


163. * R. Dahal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “1.54 µm emitter and optical amplifier based on Er doped InGaN/GaN,” Proc. SPIE 7598, 759819 (2010). doi:10.1117/12.842325 Ι PDF

 ————     Year 2009


164. A. BenMoussa, A. Soltani, U. Schühle, K. Haenen, Y.M. Chong, W.J. Zhang, R. Dahal, J.Y. Lin, H.X. Jiang, H.A. Barkad, B. BenMoussa, D. Bolsee, C. Hermans, U. Kroth, C. Laubis, V. Mortet, J.C. De Jaeger, B. Giordanengo, M. Richter, F. Scholze, and J.F. Hochedezm, “Recent developments of wide-bandgap semiconductor based UV sensors,” Diamond & Related Materials, 18, 860 (2009). doi:10.1016/j.diamond.2008.11.013 Ι PDF


165. B. Giordanengo, A. Ben Moussa, J.-F. Hochedez, A. Soltani, P. de Moor, K. Minoglou, P. Malinowski, J.-Y. Duboz, Y.M. Chong, Y.S. Zou, W.J. Zhang, S.T. Lee, R. Dahal, J. Li, J.Y. Lin and and H.X. Jiang, “Recent Rob developments on wide bandgap based uv sensors,” EAS Publications Series, 37, 199 (2009). [Astrophysics Detector Workshop 2008] doi:10.1051/eas/0937025 Ι PDF


166. A. Sedhain, L. Du, J. H. Edgar, J. Y. Lin, and H. X. Jiang, “The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates,” Appl. Phys. Lett. 95, 262104 (2009). doi:10.1063/1.3276567 Ι PDF


167. B. N. Pantha, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Electrical and optical properties of p-type InGaN,” Appl. Phys. Lett. 95, 261904 (2009). doi:10.1063/1.3279149 Ι PDF


168. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Erbium-doped GaN optical amplifiers operating at 1.54 µm,” Appl. Phys. Lett. 95, 111109 (2009). doi:10.1063/1.3224203 Ι PDF


169. A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “Probing exciton-phonon interaction in AlN epilayers by photoluminescence,” Appl. Phys. Lett. 95, 061106 (2009). doi:10.1063/1.3206672 Ι PDF


170. S. Nikishin, B. Borisov, M. Pandikunta, R. Dahal, J. Y. Lin, H. X. Jiang, H. Harris, and M. Holtz, “High quality AlN for deep UV photodetectors,” Appl. Phys. Lett. 95, 054101 (2009). doi:10.1063/1.3200229 Ι PDF


171. A. Sedhain, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Photoluminescence properties of erbium doped InGaN epilayers,” Appl. Phys. Lett. 95, 041113 (2009). doi:10.1063/1.3193532 Ι PDF


172. N. Nepal, J. M. Zavada, R. Dahal, C. Ugolini, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers,” Appl. Phys. Lett. 95, 022510 (2009). doi:10.1063/1.3176972 Ι PDF


173. X. H. Ji, Q. Y. Zhang, S. P. Lau, H. X. Jiang, and J. Y. Lin, “Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays,” Appl. Phys. Lett. 94, 173106 (2009). doi:10.1063/1.3126055 Ι PDF


174. N. Nepal, J. M. Zavada, D. S. Lee, A. J. Steckl, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys,” Appl. Phys. Lett. 94, 111103 (2009). doi:10.1063/1.3097808 Ι PDF


175. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys,” Appl. Phys. Lett. 94, 091903 (2009). doi:10.1063/1.3094754 Ι PDF


176. R. Dahal, B. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “InGaN/GaN multiple quantum well solar cells with long operating wavelengths,” Appl. Phys. Lett. 94, 063505 (2009). doi:10.1063/1.3081123 Ι PDF


177. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang and G. Pomrenke, “Thermoelectric Properties of In_0.3Ga_0.7N Alloys”,  JEM (2009). doi:10.1007/s11664-009-0676-8 Ι PDF

 ————     Year 2008


178. Z. Y. Fan, J. Y. Lin and H. X. Jiang,"III-nitride micro-emitter arrays: development and applications," J. Phys. D: Appl. Phys. 41, 094001 (2008). doi:10.1088/0022-3727/41/9/094001 Ι PDF


179. B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase In_xGa_1−xN (0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93, 182107 (2008). doi:10.1063/1.3006432 Ι PDF


180. J. Li, J. Y. Lin, and H. X. Jiang, “Direct hydrogen gas generation by using InGaN epilayers as working electrodes,” Appl. Phys. Lett. 93, 162107 (2008). doi:10.1063/1.3006332 Ι PDF


181. J. Liu, J. Li, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Structure and Photoluminescence Study of TiO₂ Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays”, J. Phys. Chem. C, 112, 17127 (2008). doi:10.1021/jp8060653 Ι PDF


182. A. Sedhain, T. M. Al Tahtamouni, J. Li, J. Y. Lin, and H. X. Jiang, “Beryllium acceptor binding energy in AlN,” Appl. Phys. Lett. 93, 141104 (2008). doi:10.1063/1.2996977 Ι PDF


183. A. Sedhain, N. Nepal, M. L. Nakarmi, T. M. Al tahtamouni, J. Y. Lin, H. X. Jiang, Z. Gu, and J. H. Edgar, “Photoluminescence properties of AlN homoepilayers with different orientations,” Appl. Phys. Lett. 93, 041905 (2008). doi:10.1063/1.2965613 Ι PDF


184. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Current-injected 1.54  µm light emitting diodes based on erbium-doped GaN,” Appl. Phys. Lett. 93, 033502 (2008). doi:10.1063/1.2955834 Ι PDF


185. N. Khan, A. Sedhain, J. Li, J. Y. Lin, and H. X. Jiang, “High mobility InN epilayers grown on AlN epilayer templates,” Appl. Phys. Lett. 92, 172101 (2008). doi:10.1063/1.2917473 Ι PDF


186. T. Al Tahtamouni, A. Sedhain, J. Y. Lin, H. X. Jiang, “Growth and optical properties of a-plane AlN and Al rich AlN/Al_xGa_1-xN quantum wells grown on r-plane sapphire substrates”, phys. stat. sol. (c), 5, 1568 (2008). doi:10.1002/pssc.200778491 Ι PDF


187. R. Dahal, J. Li, Z. Y. Fan, M. L. Nakarmi, T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang, “AlN MSM and Schottky photodetectors”, phys. stat. sol. (c), 5,2148, (2008). doi:10.1002/pssc.200778489 Ι PDF


188. T. M. Al tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant,” Appl. Phys. Lett. 92, 092105 (2008). doi:10.1063/1.2890416 Ι PDF


189. A. Sedhain, J. Y. Lin, and H. X. Jiang, “Valence band structure of AlN probed by photoluminescence,” Appl. Phys. Lett. 92, 041114 (2008). doi:10.1063/1.2840176 Ι PDF


190. B. N. Pantha, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, and G. Pomrenke, “Thermoelectric properties of In_xGa_1−xN alloys,” Appl. Phys. Lett. 92, 042112 (2008). doi: 10.1063/1.2839309 Ι PDF


191. A. BenMoussa, J. F. Hochedez, R. Dahal, J. Li, J. Y. Lin, H. X. Jiang, A. Soltani, J.-C. De Jaeger, U. Kroth, and M. Richter, “Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360 nm: Photoemission assessments,” Appl. Phys. Lett. 92, 022108 (2008). doi:10.1063/1.2834701 Ι PDF


192. K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J.Y. Lin, H.X. Jiang , J. Zavada, “Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er”, Materials Science and Engineering B 146, 193 (2008). doi:10.1016/j.mseb.2007.07.032 Ι PDF

 ————     Year 2007


193. R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, and H. X. Jiang , “AlN avalanche photodetectors,” Appl. Phys. Lett. 91, 243503 (2007). doi:10.1063/1.2823588 Ι PDF


194. X. A. Cao, H. Piao, J. Li, J. Y. Lin, and H. X. Jiang, "Surface chemical and electronic properties of plasma-treated n-type Al_0.5Ga_0.5N," Phys. Stat. Sol. (a) 204, 3410 (2007). doi:10.1002/pssa.200723119 Ι PDF


195. B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation between biaxial stress and free exciton transition in AlN epilayers,” Appl. Phys. Lett. 91, 121117 (2007). doi:10.1063/1.2789182 Ι PDF


196. Fei Wang, Shu-Shen Li, Jian-Bai Xia, H. X. Jiang, J. Y. Lin, Jingbo Li, and Su-Huai Wei, “Effects of the wave function localization in AlInGaN quaternary alloys,” Appl. Phys. Lett. 91, 061125 (2007). doi:10.1063/1.2769958 Ι PDF


197. J. M. Zavada, N. Nepal, C. Ugolini, J. Y. Lin, and H. X. Jiang et al, "Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition," Appl. Phys. Lett. 91, 054106 (2007). doi:10.1063/1.2767992 Ι PDF


198. N. Khan, N. Nepal, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Mg acceptor level in InN epilayers probed by photoluminescence,” Appl. Phys. Lett. 91, 012101 (2007). doi:10.1063/1.2753537 Ι PDF


199. R. Dahal, T. M. Al Tahtamouni, Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors,” Appl. Phys. Lett. 90, 263505 (2007). doi:10.1063/1.2752126 Ι PDF


200. B. N. Pantha, R. Dahal, M. L. Nakarmi, N. Nepal, J. Li, J. Y. Lin, H. X. Jiang, Q. S. Paduano, and David Weyburne, “Correlation between optoelectronic and structural properties and epilayer thickness of AlN,” Appl. Phys. Lett. 90, 241101 (2007). doi:10.1063/1.2747662 Ι PDF


201. T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/Al_xGa_1−xN quantum wells,” Appl. Phys. Lett. 90, 221105 (2007). doi:10.1063/1.2743956 Ι PDF


202. X. H. Ji, S. P. Lau, S. F. Yu, H. Y. Yang, T. S. Herng, A. Sedhain, J. Y. Lin, H. X. Jiang, K. S. Teng, and J. S. Chen, “Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods,” Appl. Phys. Lett. 90, 193118 (2007). doi:10.1063/1.2738370 Ι PDF


203. * Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “Achieving conductive high Al-content AlGaN alloys for deep UV photonics,” Proc. SPIE 6479, 64791I (2007). doi:10.1117/12.715046


204. C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, “Excitation dynamics of the 1.54 µm emission in Er doped GaN synthesized by metal organic chemical vapor deposition,”Appl. Phys. Lett. 90, 051110(2007). doi:10.1063/1.2450641 Ι  PDF


205. H. X. Jiang and J. Y. Lin, “III-Nitride Micro-Cavity Light-Emitters,” – in “Wide Bandgap Light-Emitting Materials and Devices,” edited by G.F. Neumark, I. Kuskovsky, and H. X. Jiang, published by Wiley –VCH Verlag GmbH, 2007.

 ————     Year 2006


206.  J. Li, Z. Y. Fan, R. Dahal, M. L Nakarmi, J. Y. Lin, and H. X. Jiang, “200  nm deep ultraviolet photodetectors based on AlN,”   Appl. Phys. Lett. 89, 213510 (2006). doi:10.1063/1.2397021 Ι PDF


207. N. Nepal, M. L. Nakarmi, H. U. Jang, J. Y. Lin, and H. X. Jiang, "Growth and photoluminescence studies of Zn-doped AlN epilayers,"Appl. Phys. Lett. 89, 192111 (2006). doi: 10.1063/1.2387869 Ι PDF


208. M. L. Nakarmi, N. Nepal, C. Ugolini, T. M. Al Tahtamouni, J. Y. Lin,and  H. X. Jiang,"Correlation between optical and electrical properties of Mg-doped AlN epilayers," Appl. Phys. Lett. 89, 152120 (2006). doi:10.1063/1.2362582 Ι PDF


209. Z. M. Zavada, N.Nepal, J. Y. Lin, H. X. Jiang,E. Brown, U. Hommerich, J. Hite, G. T. Thaler, C. R. Abernathy, S. J. Pearton,and R. Gwilliam, "Ultraviolet photoluminescence from Gd-implanted AlN epilayers," Appl. Phys. Lett. 89, 152107 (2006). doi:10.1063/1.2357552 Ι PDF


210. N. Khan and J. Li, "Effects of compressive strain on optical properties of In_xGa_1−xN/GaN quantum wells," Appl. Phys. Lett. 89, 151916 (2006). doi:10.1063/1.2362587 Ι PDF 


211. C. Ugolini, N.Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada "Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition," Appl. Phys. Lett. 89, 151903 (2006). doi:10.1063/1.2362587 Ι PDF


212. T. M. Al Tahtamouni, N. Nepal, J. Y. Lin, H. X. Jiang and W. W. Chow, "Growth and photoluminescence studies of Al-rich AlN/Al_xGa_1−xN quantum wells," Appl. Phys. Lett.89, 131922 (2006). doi:10.1063/1.2358107 Ι PDF


213. N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Photoluminescence studies of impurity transitions in AlGaN alloys," Appl. Phys. Lett. 89, 092107 (2006). doi:10.1063/1.2337856 Ι PDF


214. N. Nepal, K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy," Appl. Phys. Lett. 88, 261919 (2006).doi: 10.1063/1.2217160 Ι PDF


215. X. A. Cao, H. Piao, S. F. LeBoeuf, J. Li, J. Y. Lin, and H. X. Jiang, "Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN," Appl. Phys. Lett. 89, 082109 (2006). doi:10.1063/1.2338434 Ι PDF


216. J. K. Kim , E. F. Schubert , J. Cho , C. Sone , J. Y. Lin , H. X. Jiang , and J. M. Zavada, "GaN light-emitting triodes for high-efficiency hole injection," J. Electrochem. Soc.153, G734 (2006). doi:10.1117/12.647453 Ι PDF


217. T. N. Oder, P. Martin, J. Y. Lin, H. X. Jiang, J. R. Williams, and T. Isaacs-Smith, "Thermally stable Schottky contacts on n-type GaN using ZrB₂," Appl. Phys. Lett. 88, 183505 (2006).doi:10.1063/1.2199611 Ι PDF


218. J. Li, J. Y. Lin, and H. X. Jiang,"Growth of III-nitride photonic structures on large area silicon substrates," Appl. Phys. Lett. 88, 171909 (2006). doi:10.1063/1.2199492 Ι PDF


219. * Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “III-nitride deep ultraviolet micro- and nano-photonics,” Proc. SPIE 6127, 61271C (2006), invited.


220. N. Nepal, J. Shakya, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Deep ultraviolet photoluminescence studies of AlN photonic crystals," Appl. Phys. Lett. 88, 133113 (2006). doi:10.1063/1.2190452 Ι PDF


221. * N. Nepal, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Time-resolved photoluminescence studies of Mg-doped AlN epilayers," Proc. SPIE, 6118, 61180E (2006). doi:10.1117/12.651856,invited.
     
     
222. Z. Y. Fan, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN/GaN/AlN quantum-well field-effect transistors with highly resistive AlN epilayers," Appl. Phys. Lett. 88, 073513 (2006). doi:10.1063/1.2174847 Ι PDF


223. N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Exciton localization in AlGaN alloys," Appl. Phys. Lett. 88, 062103 (2006). doi:10.1063/1.2172728 Ι PDF
     
     
224. A. N. Westmeyer, S. mahajan, K. K. Bajaj, J. Y. Lin, H. X. Jiang, D. D. Koleske, and R. T. Senger, "Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys," J. Appl. Phys. 99, 013705 (2006). doi:10.1063/1.2158492 Ι PDF


225. * H. X. Jiang, C. Ugolini, J. Y. Lin, and J. Zavada, “III-nitride wide bandgap semiconductors for optical communications,” IEEE Lasers and Electro-Optics Society (LEOS) Annual Meeting, Vols 1 and 2, 36 (2006) 2006, invited.

 ————     Year 2005


226. G.D. Chen, Y. Z. Zhu, G. J. Yan, J. S.Yuan, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Time-resolved photoluminescence studies of indium-rich InGaN alloys,” CHINESE PHYSICS LETTERS 22, 472 (2005). doi: 10.1088/0256-307X/22/2/057 Ι PDF


227. Hallbeck S, Caruso AN, Adenwalla S, Brand J, Byun DJ, Jiang HX, Lin JY, Losovyj YB, Lundstedt C, McIlroy DN, Pitts WK, Robertson BW, Dowben PA, “Comment on "Spectral identification of thin film coated and solid form semiconductor neutron detectors" by McGregor and Shultis,” Nuclear Instruments & Methods in Physics Research Section A-Accelerators Spectrometers Detectors and Associated Equipment,536, 228 (2005). doi:10.1016/j.nima.2004.07.210 Ι PDF


228.  N. Nepal, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Temperature and Compositional Dependence of the Energy Bandgap of AlGaN Alloys,” Appl. Phys. Lett. 87, 242104 (2005). doi:10.1063/1.2142333 Ι PDF


229. N. Nepal, K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, "Carrier dynamics in AlN and GaN epilayers at the elevated temperatures,"Proc. SPIE, 5725, 119 (2005). doi:10.1117/12.590917


230. R. Hui, Y. Wan, J. Li, S.X. Jin, J. Y. Lin, and H. X. Jiang, “III-nitride-based planar lightwave circuits for long wavelength optical communications,” IEEE J. Quantum Electronics 41, 100 (2005). doi:10.1109/JQE.2004.838169 Ι PDF


231. M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. Jiang, "Unintentionally doped n-type Al_0.67Ga_0.33N epilayers" Appl. Phys. Lett.  86, 261902 (2005). doi:10.1063/1.1954875 Ι PDF


232.  K. B. Nam, M. L. Nakarmi,  J. Y. Lin, and H. X. Jiang,"Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys" Appl. Phys. Lett.  86, 222108 (2005). doi:10.1063/1.1943489 Ι PDF


233. M. Khizar, Z. Y. Fan, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Nitride deep-ultraviolet light-emitting diodes with microlens array" Appl. Phys. Lett.  86, 173504 (2005). doi:10.1063/1.1914960 Ι PDF


234. J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang , "Polarization of III-nitride blue and ultraviolet light-emitting diodes" Appl. Phys. Lett.  86, 091107 (2005). doi:10.1063/1.1875751 Ι PDF


235.  M. L. Nakarmi, K. H. Kim, M. Khizar, Z. Y. Fan, J. Y. Lin and H. X. Jiang, "Electrical and optical properties of Mg-doped Al_0.7Ga_0.3N alloys"Appl. Phys. Lett.  86, 092108 (2005). doi:10.1063/1.1879098 Ι PDF


236. * J. Y. Lin, H. X. Jiang, and J. Zavada, “Nitride Photonic Crystals,” Eighth International Symposium on Contemporary Photonics Technology, Tokyo, Japan (January 2005), invited.


237. * J. Y. Lin, and H. X. Jiang, “III-Nitride Ultraviolet Micro- and Nano-Photonics,” CLEO 2005 technical digest, Baltimore (May 2005), invited.


238. * J.M. Zavada, Ei Ei Nyein, U. Hommerich, J., Li, J. Y. Lin, H. X. Jiang, P. Chow, and J. W. Dong, “Visible and IR emission from Er-doped III-N LEDs,” MRS Proceedings, 866, 59 (2005).


239. B. Guo, Z. R. Qiu, J. Y. Lin, H. X. Jiang, and K. S. Wong, “Deep bandtail states picosecond intensity-dependent carrier dynamics of GaN epilayer under high excitation,” Appl. Phys. B – Laser and Optics 80, 521 (2005).


240. B. Liu, J.H. Edgar, B. Raghothamachar, M. Dudley, J.Y. Lin, and H.X. Jiang, A. Sarua, M. Kuball, “Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation,” Materials Science and Engineering B - Solid State Materials for Advanced Technology 117, 99 (2005).

 ————     Year 2004


241.  K. H. Kim, Z. Y. Fan, M. Khizar, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers,” Appl. Phys. Lett.  85, 4777 (2004). doi:10.1063/1.1819506 Ι PDF


242. K. Zhu, M. L. Nakarmi, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Silicon Doping Dependence of Highly Conductive n-type Al_0.7Ga_0.3N,” Appl. Phys. Lett.  85, 4669 (2004). doi:10.1063/1.1825055 Ι PDF


243. * J. Shakya, K. H. Kim, T. N. Oder, J. Y. Lin, and H. X. Jiang, “III-nitride blue and UV photonic-crystal light-emitting diodes,” Proc. of SPIE Vol. 553-241(2004). doi:10.1117/12.565632 Ι PDF


244. * M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin and H. X. Jiang, “Mg doped Al-rich AlGaN alloys for UV emitters,”  Proc. SPIE, 5530, 54 (2004). doi:10.1117/12.566192 Ι PDF


245. * K.B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin and H. X. Jiang, “Time-resolved photoluminescence studies of Si & Mg-doped AlN epilayers,” Proc. SPIE (SPIE, Belingham, WA), 5352, 188 (2004). doi:10.1117/12.525752


246.  L. Chen, B. J. Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar,C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang,"Band-edge exciton states in AlN single crystals and epitaxial layers," Appl. Phys. Lett. 85, 4334 (2004).doi:10.1063/1.1818733 Ι PDF


247. M. L. Nakarmi, K. H. Kim, K. Zhu, J. Y. Lin, and H. X. Jiang, "Transport properties of highly conductive n-type Al-rich Al_xGa_1−xN  (x ≥ 0.7)," Appl. Phys. Lett. 85, 3769 (2004). doi:10.1063/1.1809272 Ι PDF


248. K. B. Nam, J. Li, J. Y. Lin, and H. X. Jiang, "Optical properties of AlN and GaN in elevated temperatures," Appl. Phys. Lett. 85, 3489 (2004). doi:10.1063/1.1806545 Ι PDF


249. N. Nepal, M. L. Nakarmi, K. B. Nam, J. Y. Lin, and H. X. Jiang, "Acceptor-bound exciton transition in Mg-doped AlN epilayer," Appl. Phys. Lett. 85, 2271 (2004). doi:10.1063/1.1796521 Ι PDF


250. J. Shakya, J. Y. Lin and H. X. Jiang, "Time-Resolved Electroluminescence Studies of III-Nitride Ultraviolet Photonic-Crystal Light-Emitting Diodes," Appl. Phys. Lett. 85, 2104 (2004). doi:10.1063/1.1786372 Ι PDF


251. J. Shakya, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Enhanced Light Extraction in III-Nitride Ultraviolet Photonic Crystal Light-Emitting Diodes," Appl. Phys. Lett. 85, 142 (2004). doi:10.1063/1.1768297 Ι PDF


252. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Unique optical properties of AlGaN alloys and related ultraviolet emitters," Appl. Phys. Lett. 84, 5264 (2004). doi:10.1063/1.1765208 Ι PDF


253. W. Liang, K.T. Tsen, D.K. Ferry, K.H. Kim, J.Y. Lin, and H.X. Jiang, “Field-induced non-equilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN studied by subpicosecond Raman spectroscopy,” Semiconductor Science and Technology, 19, S427 (2004). doi:10.1088/0268-1242/19/4/140 Ι PDF


254. * Y. Gong, Y. Gu, Igor L. Kuskovsky, G.F. Neumark, J. Li, J.Y. Lin, H.X. Jiang, and I. Ferguson, “Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition,” MRS Proceedings, 798, 491 (2004). doi:10.1557/PROC-798-Y5.16 Ι PDF


255. * Z. Y. Fan, M.L. Nakarmi, J.Y. Lin, and H.X. Jiang, “Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AlN Epilayers,” MRS Proceedings 798, 101 (2004). doi: 10.1557/PROC-798-Y10.23


256. * Z. Y. Fan, J. Y. Lin, and H. X. Jiang, "Recent Advances in III-Nitride  UV Materials and Devices", State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II,Proceedings Volume 2004-02


257. J. Shakya, J. Y. Lin and H. X. Jiang, "Near Field Optical Study of AlGaN/GaN Quantum Well Waveguide," Appl. Phys. Lett. 84 1832 (2004). doi:10.1063/1.1675936 Ι PDF


258. C. H. Chen and Y. F. Chen, Z. H. Lan, L. C. Chen, and K. H. Chen, H. X. Jiang and J. Y. Lin, "Mechanism of enhanced luminescence in In_xAl_yGa_1−x−yN quaternary epilayers," Appl. Phys. Lett. 84 1480 (2004). doi:10.1063/1.1650549 Ι PDF


259. Y. S. Park, K. H. Kim, J. J. Lee, H. S. Kim, T. W. Kang, H. X. Jiang, and J. Y. Lin, "X-ray diffraction analysis of the defect structure in Al_xGa_1−xN films grown by metal organic chemical vapor deposition," J. of Mater. Science 39, 1853(2004). doi:10.1023/B:JMSC.0000016202.96505.51 Ι PDF


260. N. Nepal, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, J. M. Zavada, and R. G. Wilson, “Optical properties of the nitrogen vacancy in AlN epilayers,” Appl. Phys. Lett.84, 1090 (2004). doi:10.1063/1.1648137 Ι PDF


261. J. M. Zavada, S. X. Jin, N. Nepal, J. Y. Lin, H. X. Jiang, P. Chow and B. Hertog, “Electroluminescent properties of erbium-doped III-N light emitting diodes,” Appl. Phys. Lett. 84, 1061 (2004). doi:10.1063/1.1647271 Ι PDF


262. T. N. Oder, K. H. Kim, J. Y. Lin and H. X. Jiang, “III-Nitride Blue and Ultraviolet Photonic Crystal Light Emitting Diodes,” Appl.  Phys.  Lett.  84,  466 (2004). doi:10.1063/1.1644050 Ι PDF


263. * W. Liang, K.T. Tsen, D.K. Ferry, K.H. Kim, J.Y. Lin, and H.X. Jiang, “Subpicosecond Raman studies of non-equilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN,” Proc. SPIE (SPIE, Belingham, WA), 5352, 404 (2004). doi:10.1117/12.528322 Ι PDF


264. H. X. Jiang and J. Y. Lin, “Carrier Dynamics Probed by Time-Resolved Photoluminescence,”– in “Ultrafast Dynamics Processes in Semiconductors,” Book Volume 92 – Topics in Applied Physics, edited by K. T. Tsen, published by Springer-Verlag Berlin, (Berlin Heidelberger, 2004).


265. H. X. Jiang & J. Y. Lin, "AlN Epitaxial Layers for UV Photonics" – Chapter 7 in Optoelectronic Devices: III-Nitride, edited by M. Razeghi and M. Heini, published by Elsevier Ltd. (Amsterdam, 2004).


266. Shih-Wei Feng, Tsung-Yi Tang, Yen-Cheng Lu, Shi-Jiun Liu, En-Chiang Lin, C. C. Yang, Kung-Jen Ma,Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing,” J. Appl. Phys. 95, 5388 (2004). doi: 10.1063/1.1703828 Ι PDF


267. D. Zhang, J. H. Edgar, B. Liu, H. E. Huey, H. X. Jiang, J. Y. Lin, M. Kuball, F. Mogal, J. Chaudhuri, and Z. Rek, “Bulk AlN growth by direct heating of the source using microwave,” J. Crystal Growth, 262 89 (2004). doi: 10.1016/j.jcrysgro.2003.10.080 Ι PDF

 ————     Year 2003


268. *J. Shakya, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “III-Nitride Photonic Crystals for Blue and UV Emitters,” Symposium Proceedings of Material Research Society Vol. 798, Y4.6.1 (2003). doi: 10.1557/PROC-798-Y4.6


269.   H. X. Jiang, J. Y. Lin, R. Hui, and J. Zavada, “III-nitrides show promise for telecomm wavelengths,” Laser Focus World, Nov. issue (2003).  Link


270. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, H. X. Jiang, Pierre Carrier, and Su-Huai Wei, "Band structure and fundamental optical transitions in wurtzite AlN," Appl. Phys. Lett. 83, 5163 (2003).  doi: 10.1063/1.1633965 Ι PDF


271.  H. D. Sun, R. Macaluso, S. Calvez, M. D. Dawson, F. Robert, A. C. Bryce,J. H. Marsh, P. Gilet, L. Grenouillet, A. Million,K. B. Nam, J. Y. Lin, and H. X. Jiang,"Quantum well intermixing in GaInNAs/GaAs structures," J. Appl. Phys. 94, 7581 (2003).  doi: 10.1063/1.1627950 Ι PDF


272.  Shih-Wei Feng, En-Chiang Lin, Tsung-Yi Tang, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,"Appl. Phys. Lett. 83, 3906 (2003).  doi: 10.1063/1.1625434 Ι PDF


273.  R. M. Frazier, G. T. Thaler, C. R. Abernathy, S. J. Pearton, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang,J. Kelly, R. Rairigh, and A. F. Hebard, "Transition metal ion implantation into AlGaN,"J. Appl. Phys. 94, 4956 (2003).  doi: 10.1063/1.1613375 Ι PDF


274.  K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, "Photoluminescence studies of Si-doped AlN epilayers,"Appl. Phys. Lett. 83, 2787 (2003).  doi: 10.1063/1.1616199 Ι PDF


275.  R. Hui, Y. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang," Birefringence of GaN/AlGaN optical waveguides,"Appl. Phys. Lett. 83, 1698 (2003).  doi: 10.1063/1.1606103 Ι PDF


276. T. N. Oder, J. Shakya, J. Y. Lin, and H. X. Jiang, "III-nitride photonic crystals," Appl. Phys. Lett. 83, 1231 (2003).  doi: 10.1063/1.1600839 Ι PDF


277. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, "Mg acceptor level in AlN probed by deep ultraviolet photoluminescence," Appl. Phys. Lett. 83, 878 (2003).  doi: 10.1063/1.1594833 Ι PDF


278. R. M. Frazier, J. Stapleton, G. T. Thaler, C. R. Abernathy, S. J. Pearton, R. Rairigh, J. Kelly, A. F. Hebard, M. L. Nakarmi, K. B. Nam, J. Y. Lin, H. X. Jiang, J. M. Zavada and R. G. Wilson, "Properties of Co-, Cr- or Mn-implanted AlN," J. Appl. Phys. 94, 1592 (2003).  doi: 10.1063/1.1586987 Ι PDF


279. K. H. Kim, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, "III-nitride ultraviolet light-emitting diodes with delta doping," Appl. Phys. Lett. 83, 566 (2003).  doi: 10.1063/1.1593212 Ι PDF


280. Young Shin Park, Kun Ho Kim, Jeoung Ju Lee, Hyeon Soo Kim, Tae Won Kang, Hong Xing Jiang and Jing Yu Lin, "Defect Reduction in Al_xGa_1-xN Films Grown by Metal Organic Chemical Vapor Deposition," Jpn. J. Appl. Phys. 42, 1231 (2003).  doi: 10.1143/JJAP.42.1231 Ι PDF


281. Z. Y. Fan, J. Li, J. Y. Lin, H. X. Jiang, Y. Liu, J. A. Bardwell, J. B. Webb, and H. Tang, "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer," Symposium Proceedings of Materials Research Society, 743, 567 (2003).  doi: 10.1557/PROC-743-L9.11


282. * K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Epitaxial growth and time-resolved photoluminescence studies of AlN epilayers," SPIE Proceedings, 4992, 202 (2003).  doi: 10.1117/12.479274 Ι PDF


283. L. S. Yu, L. Jia, D. Qiao, S. S. Lau, J. Li, J. Y. Lin, and H. X. Jiang, "The origin of leaky characteristics of Schottky diode on p-GaN," IEEE Transaction on Electron Devices, 50, 292 (2003).  doi: 10.1109/TED.2002.808558 Ι PDF


284. M. L. Nakarmi, K. H. Kim, J. Li, J. Y. Lin and H. X. Jiang, "Enhanced P-type Conductions in GaN and AlGaN by Mg-Delta-Doping," App. Phys. Lett. 82, 3041 (2003).  doi: 10.1063/1.1559444 Ι PDF


285. T. N. Oder, J. Shakya, J. Y. Lin and H. X. Jiang "Nitride Microlens Arrays for Blue and UV Wavelength Applications," Appl. Phys. Lett. 82, 3692 (2003).  doi: 10.1063/1.1579872 Ι PDF


286. H. X. Jiang and J. Y. Lin, "Advances in III-Nitride Microstructures and Micro-Size Emitters," J. of the Korean Physical Society, 42, S757 (2003). PDF


287. J. Y. Lin and H. X. Jiang, "Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices," J. of the Korean Physical Society, 42, S535 (2003). PDF


288. C. H. Chen, D. R. Hang, W. H. Chen, Y. F. Chen, H. X. Jiang and J. Y. Lin, “Persistent Photoconductivity in In_xAl_yGa_1−x−yN quaternary alloys,” Appl. Phys. Lett. 82, 1884 (2003).  doi: 10.1063/1.1558959 Ι PDF


289. K.B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, “Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers,” Appl. Phys. Lett. 82, 1694 (2003).  doi: 10.1063/1.1559659 Ι PDF


290. W. Liang, K. T. Tsen, D. K. Ferry, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Studies of field-induced non-equilibrium electron transport in an InxGa1-xN (x»0.6) epilayer grown on GaN,” Appl. Phys. Lett. 82, 1413 (2003).  doi: 10.1063/1.1556576 Ι PDF


291. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Kung-Jeng Ma, Chih-Chiang Yan, Chen Hsu, J. Y. Lin, and H. X. Jiang, “Strong green luminescence in quaternary InAlGaN thin films,” Appl. Phys. Lett. 82, 1377 (2003).  doi: 10.1063/1.1556965 Ι PDF


292. R. Hui, S. Taherion, Y. Wan, J. Li, S.X. Jin, J. Y. Lin, and H. X. Jiang, “GaN-based waveguide devices for long wavelength optical communications,” Appl. Phys. Lett. 82, 1326 (2003).  doi: 10.1063/1.1557790 Ι PDF


293. * J. Y. Lin and H. X. Jiang, “III-Nitride Ultraviolet Photonic Materials – Epitaxial Growth, Optical and Electrical Properties, and Applications,” Proceedings of SPIE on Quantum Sensing, 4999, 287 (2003), invited.  doi: 10.1117/12.483961 Ι PDF


294. H. X. Jiang & J. Y. Lin, “III-Nitride Quantum Devices – Microphotonics,” CRC Critical Reviews in Solid State and Materials Sciences, (P. Holloway, Editor), 28, 131 (2003), invited.  doi: 10.1080/10408430390802440


295. J. M. Zavada, J. Y. Lin, H. X. Jiang, P. Chow, B. Hertog, U. Hömmerich, Ei Ei Nyein, and H. A. Jenkinson, “Synthesis and optical characterization of erbium-doped III-N double heterostructures,” Mater. Sci. Eng. B, Elsevier, B105, 118 (2003).  doi: 10.1016/j.mseb.2003.08.028 Ι PDF


296. J. M. Zavada, R. G. Wilson, U. Hommerich, M. Thaik, J. T. Seo, C. J. Ellis, J. Y. Lin, and H. X. Jiang, “Compositional changes in Erbium-implanted GaN films due to Annealing,” Journal of Electronic Materials, 32, 382 (2003).  doi: 10.1007/s11664-003-0162-7 Ι PDF

 ————     Year 2002


297. J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Optical and Electrical Properties of Mg-doped p-type AlGaN," Appl. Phys. Lett. 80, 1210 (2002).  doi: 10.1063/1.1450038 Ι PDF


298. Z. Y. Fan, J. Li, J. Y. Lin, and H. X. Jiang,"Delta-doped AlGaN/GaN metal oxide semiconductor heterostructure field effect transistors with high breakdown voltages," Appl. Phys. Lett. 81, 4649 (2002).  doi: 10.1063/1.1527984 Ι PDF


299. J. Li, K. B. Nam, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Band-edge Photoluminescence of AlN Epilayers," Appl. Phys. Lett. 81, 3365 (2002).  doi: 10.1063/1.1518558 Ι PDF


300. K.B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang, "Growth and Optical Studies of Two-Dimensional Electron Gas of Al-rich AlGaN/GaN Heterostructures," Appl. Phys. Lett. 81, 1809 (2002).  doi: 10.1063/1.1504881 Ι PDF


301. X. A. Cao, S. F. LoBoeuf, K. H. Kim, P. Sandvik, E. B. Stokes, A. Ebong, D. Walker, J. Kretchmer, J. Y. Lin, and H. X. Jiang, "Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes," Solid-State Electronics, 46, 2291 (2002).  doi: 10.1016/S0038-1101(02)00190-9 Ι PDF


302. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Achieving highly conductive AlGaN alloys with high Al contents," Appl. Phys. Lett. 81, 1038 (2002).  doi: 10.1063/1.1492316 Ι PDF


303. * T. N. Oder, J. Li, J. Y. Lin, and H. X. Jiang,"Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probed by time-resolved photoluminescence", Proceeding of SPIE 4643, 258 (2002).  doi: 10.1117/12.470430 Ι PDF


304. * J. Li K. B. Nam, T. N. Oder, K. H. Kim, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Time-resolved photoluminescence studies of Al-rich AlGaN alloys",Proceeding of SPIE 4643 250 (2002).  doi: 10.1117/12.470429 Ι PDF


305. H. X. Jiang, J. Y. Lin, and W. W. Chow “Time-Resolved Photoluminescence Studies of III-Nitrides,” Chapter 1 in "Optical Properties of III-Nitrides I" edited by M .O. Manasreh and H. X. Jiang, (Taylor & Francis Books, New York & London 2002).


306. H. X. Jiang and J. Y. Lin, “AlGaN and InAlGaN Alloys – Epitaxial Growth, Optical and Electrical Properties, and Applications,” in a special issue of Opto-Electronics Review, 10, 271 (2002), invited. PDF


307. M. E. Aumer, S. F. LeBoeuf, B. F. Moody, S. M. Bedair,K. Nam, J. Y. Lin, and H. X. Jiang"Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures", Appl. Phys. Lett. 80, 3099 (2002).  doi: 10.1063/1.1469219 Ι PDF


308. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin and H. X. Jiang,"Exciton Luminescence Linewidth in AlGaN Alloys with High Aluminum Concentrations", Appl. Phys. Lett. 80, 2907 (2002).  doi: 10.1063/1.1471932 Ι PDF


309. H. X. Jiang, J. Y. Lin, and W. W. Chow “Time-Resolved Photoluminescence Studies of III-Nitrides,” Chapter 1 in "Optical Properties of III-Nitrides I" edited by M .O. Manasreh and H. X. Jiang, (Taylor & Francis Books, New York & London 2002).

 ————     Year 2001


310. C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, "Mechanism of photoluminescence in GaN/AlGaN quantum wells", Appl. Phys. Lett. 79, 3806 (2001). doi: 10.1063/1.1420495 Ι PDF


311. J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, "Optical and Electrical Properties of Al rich AlGaN Alloys," Appl. Phys. Lett. 79, 3245 (2001). doi: 10.1063/1.1418255 Ι PDF


312. T.N. Oder, J.Y. Lin and H.X. Jiang, "Propagation properties of Light in AlGAN/GaN Quantum Well Waveguides," Appl. Phys. Lett. 79, 2511 (2001).  doi: 10.1063/1.1410359 Ι PDF


313. D. R. Hang, C. H. Chen, Y. F. Chen, H. X. Jiang, and J. Y. Lin, "AlGaN/GaN band offset determined by deep level emission," J. Appl. Phys. 90, 1887 (2001).  doi: 10.1063/1.1383259 Ι PDF


314. Dai Lun, Zhang Bei, Lin Jingyu, and Jiang Hongxing, "Properties of optical resonant modes in III-Nitride semiconductor micro-cone cavities," Chinese Phys. Lett. 18, 437 (2001).  doi: 10.1088/0256-307X/18/3/343


315. D. R. Hang, C. T. Liang, C. F. Huang, Y. H. Chang, Y. F. Chen, H. X. Jiang, and J. Y. Lin, “Effective mass of 2DEG in GaN/AlGaN heterostructure,” Appl. Phys. Lett. 79, 66 (2001).  doi: 10.1063/1.1380245 Ι PDF


316. H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Micro-Size Light Emitters,” invited feature article for III-Vs Review, June/July 2001 issue.  doi: 10.1016/S0961-1290(01)80261-1 Ι PDF


317. H. X. Jiang and J. Y. Lin, “Microdisplays Based on III-Nitride Wide Band Gap Semiconductors,” invited feature article for oe magazine (The Monthly Publication of SPIE-The internal Society for Optical Engineering), July 2001 issue. link


318. T.N. Oder, J.Y. Lin and H.X. Jiang, “Fabrication and Optical Characterization of III-Nitride Sub-micron Waveguides,” Appl. Phys. Lett. 79, 12 (2001).  doi: 10.1063/1.1381037 Ι PDF


319. C. H. Chen, Y. F. Chen, An Shih, S. C. Lee, and H. X. Jiang, “Zone-Folding effect on Optical Phonon in GaN/Al_0.2Ga_0.8N superlattices,” Appl. Phys. Lett. 78, 3035 (2001).  doi: 10.1063/1.1369389 Ι PDF


320. S. X. Jin, J. Shakya, J. Y. Lin, and H. X. Jiang, “Size Dependence of III-Nitride Microdisk Light Emitting Diode Characteristics,” Appl. Phys. Lett. 78, 3532 (2001).  doi: 10.1063/1.1376152 Ι PDF


321. L. Dai, B. Zhang, J. Y. Lin, and H. X. Jiang, “Comparison of Optical Transitions in InGaN Quantum Well Structures and Microdisks,” J. Appl. Phys. 89, 4951 (2001).  doi: 10.1063/1.1355280 Ι PDF


322. K. B. Nam, J. Li, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Growth and Deep UV Picosecond Time-Resolved Photoluminescence Studies of GaN/AlN Multiple Quantum Wells,” Appl. Phys. Lett. 78, 3690 (2001).   doi: 10.1063/1.1377317 Ι PDF


323. H. X. Jiang, S. X. Jin, J. Li, J. Shakya, and J. Y. Lin, “III-Nitride Blue Microdisplays,” Appl. Phys. Lett. 78, 1303 (2001).  doi: 10.1063/1.1351521 Ι PDF


324. G. Coli, K. K. Bajaj, J. Li, J. Y. Lin, and H. X. Jiang, “Linewidths of Excitonic Luminescence Transitions in AlGaN Alloys,” Appl. Phys. Lett. 78, 1829 (2001).  doi: 10.1063/1.1357212 Ι PDF


325. * J. Li, K. B. Nam, K. H. Kim, T. N. Oder, H. J. Jun, J. Y. Lin, and H. X. Jiang, “Growth and Optoelectronic Properties of III-Nitride Quaternary Alloys,” Proceedings of SPIE,  4280, 27 (2001).  doi: 10.1117/12.424740 Ι PDF


326. * J. Li, K. C. Zeng, E. J. Shin, J. Y. Lin, and H. X. Jiang, “Optimizing GaN/AlGaN Multiple Quantum Well Structures by Time-Resolved Photoluminescence,” Proceedings of SPIE 4280, 70 (2001).  doi: 10.1117/12.424744 Ι PDF


327. C. J. Ellis, R. M. Mair, J. Li, J. Y. Lin, H. X. Jiang, J. M. Zavada, and R. G. Wilson, “Optical Properties of pr Implanted GaN Epilayers and AlGaN Alloys,” Materials Science & Engineering B - Solid State Materials for Advanced Technology 81, 167 (2001).  doi: 10.1016/S0921-5107(00)00715-7 Ι PDF


328. J.M. Zavada, C. J. Ellis, J. Y. Lin, H. X. Jiang, J. T. Seo, U. Hommerich, M. Thaik, R. G. Wilson, P. A. Grudowski, and R. D. Dupuis, “Annealing behavior of luminescence from erbium-implanted GaN,” Materials Science & Engineering B - Solid State Materials for Advanced Technology 81, 127 (2001).  doi: 10.1016/S0921-5107(00)00689-9 Ι PDF


329. * H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Micro-Photonic Devices,” IEEE/LEOS Annual Meeting Conf. Proc. 2, 758, (2001).  doi: 10.1109/LEOS.2001.969036 Ι PDF


330. H. X. Jiang and J. Y. Lin, Book Review for “Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiGe,” by Michael E. Levinshtein, Serge L. Rumyantsev, and Michael S. Shur, Eds (John Wiley & Sons, New York, 2001), MRS Bulletin, Vol. 26, 728 (2001).


331. J. Li, K.B. Nam, K. Kim, J.Y. Lin, and H.X. Jiang. "Growth and optical properties of InAlGaN Quaternary Alloy." Applied Physics Lett. 78, 61(Jan 1 2001) issue   doi: 10.1063/1.1331087 Ι PDF

 ————     Year 2000


332. T. N. Oder, J. Li, J. Y. Lin, and H. X. Jiang, “Photoresponsivity of ultraviolet detectors based on InAlGaN quaternary,” Appl. Phys. Lett. 77, 791 (2000).  doi: 10.1063/1.1306540 Ι PDF


333. * T.N. Oder, J. Li, J.Y. Lin and H.X. Jiang, “Fabrication and Characterization of In_xAl_yGa_1−x−yN Ultraviolet Detectors,” Symposium Proceedings of Materials Research Society, (2000).  doi: 10.1557/PROC-639-G10.7


334. W. H. Sun, S. T. Wang, J. C. Zhang, K. M. Chen, G. G. Qin, Y. Z. Tong, Z. J. Yang, G. Y. Zhang, Y. M. Pu, Q. L. Zhang, J. Li, J. Y. Lin, anf H. X. Jiang, “Formation and dissolution of microcrystalline graphite in carbon-implanted GaN,” J. Appl. Phys. 88, 5662 (2000).  doi: 10.1063/1.1290462 Ι PDF


335.  S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang ”InGaN/GaN Quantum Well Interconnected Microdisk Light Emitting Diodes,” Appl. Phys. Lett. 77, 3236 (2000).  doi: 10.1063/1.1326479 Ι PDF


336. J. Z. Li, J. Y. Lin, H. X. Jiang, and G. Sullivan, “Transient Characteristics of AlGaN/GaN Heterojunction Field Effect transistors,” Appl. Phys. Lett. 77, 4046 (11 Dec 2000)  doi: 10.1063/1.1332412 Ι PDF


337. M.E. Aumer, S.F. Leboeuf, S.M. Bedair, M. Smith, J.Y. Lin, and H.X. Jiang "Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures" Appl. Phys. Lett. 77, 821 (2000).  doi: 10.1063/1.1306648 Ι PDF


338. Eun-joo Shin, J. Li, J. Y. Lin, and H. X. Jiang, “Barrier Width Dependence of Quantum Efficiencies of GaN/Al_xGa_1-xN Multiple Quantum Wells,” Appl. Phys. Lett. 77, 1170 (2000).  doi: 10.1063/1.1289262 Ι PDF


339. C.H. Wei, Z. Y. Xie, J.H. Edgar, K.C. Zeng, Y.Y. Lin, H.X. Jiang, J. Chaudhuri, C. Ignatiev, and D.N.Braski, "MOCVD Growth of BGaN on 6H-SiC (0001) Substrates," J. Electron. Mater.29, 452 (2000).  doi: 10.1007/s11664-000-0160-y Ι PDF


340. * H.S. Kim, R.A.Mair, J. Li, Y. Lin, H.X. Jiang, "Exciton Localization Dynamics in AlGaN Alloys," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3940, 139 (2000).  doi: 10.1117/12.381453 Ι PDF


341. * K.T. Tsen, C. Koch, Y. Chen, H.Morkoe, J. Li, J.Y. Lin, H.X. Jiang, "Electronic Raman Scattering From Mg-doped Wurtzite GaN," Symposium Proceedings of Materials Research Society,  Vol. 595  W11.12.1   doi: 10.1557/PROC-595-F99W11.42  


342. * J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, "Correlation Between Sheet Carrier Density and Mobility Product and Persistent Photoconductivity in AlGaN/GaN Heterostructures, "Symposium Proceedings of Material Research Society Vol. 595 W11.12.1   doi: 10.1557/PROC-595-F99W11.12 


343. K.C. Zeng, J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, "Well-width dependence of the quantum efficiencies of GaN/Al_xGa_1-xN multiple quantum wells" Appl. Phys. Lett. 76, 3040 (2000).  doi: 10.1063/1.126572 Ι PDF


344. K.T. Tsen, C. Koch,  Y.Chen, H. Morkoc, J.Z. Li, J. Li, J.Y. Lin, and H.X. Jiang, " Observation of electronic Raman scattering from Mg-doped wurtzite GaN" Appl. Phys. Lett. 76, 2889 (2000).  doi: 10.1063/1.126507 Ι PDF


345. K.C. Zeng, J. Li, J.Y. Lin, and H.X. Jiang, "Optimizing Growth Conditions for GaN/AlGaN Multiple Quantum Well Structures," Appl. Phys. Lett. 76, 864 (2000).  doi: 10.1063/1.125610 Ι PDF


346. H.S. Kim, R.A. Mair, J. Li, J.Y. Lin and H.X. Jiang, "Time-Resolved Photoluminescence Studies of Al_xGa_1−xN Alloys," Appl. Phys. Lett. 76, 1252 (2000).  doi: 10.1063/1.126000 Ι PDF


347. K.C. Zeng, J.Y. Lin, and H.X. Jiang, "Effects of Alloy Disorder on the Transport Properties of Al_xGa_1−xN Epilayers Probed by Persistent Photoconductivity," Appl. Phys. Lett. 76, 1728 (2000).  doi: 10.1063/1.126149 Ι PDF


348. S.X. Jin, J. Li, J.Z. Li, J.Y. Lin and H.X. Jiang, "GaN Microdisk Light Emitting Diodes," Appl. Phys. Lett. 76, 631 (2000).  doi: 10.1063/1.125841 Ι PDF


349. D. Qiao, L.S. Yu, S.S. Lau, J. Redwing, J.Y. Lin, and H.X. Jiang, "Dependence of Ni/AlGaN Schottky Barrier Height on Al Mode Fraction," J. Appl. Phys. 87, 801 (2000).  doi: 10.1063/1.371944 Ι PDF


350. D. Qiao, L. S. Yu, S. S. Lau, J. Y. Lin, H. X. Jiang and T. E. Haynes, “A study of the Au/Ni Ohmic contact on p-GaN,” J. Appl. Phys. 88, 4196 (2000).  doi: 10.1063/1.1311809 Ι PDF


351. Hyeon Soo Kim, Robin Mair, Jing Li, Jingyu Lin and Hongxing Jiang, “Optical Characterization of AlxGa1-xN Alloys Grown by MOCVD,” J. Korean Physical Society, 37, 391, (2000).


352. R.A. Mair, J.Y. Lin, H.X. Jiang, E.D. Jones, A.A. Allerman, and S.R. Kurtz, "Time-Resolved Photoluminescence Studies of In_xGa_1−xAs_1−yNy," Appl. Phys. Lett. 76, 188 (2000).  doi: 10.1063/1.125698 Ι PDF


353. H. X. Jiang and J. Y. Lin, “Persistent photoconductivity in III-nitrides,” Chapter 5 in "III-Nitride Semiconductors: Electrical, Structural and Defects Properties" edited by M. O. Manasreh, (Elsevier Science, 2000).

 ————     Year 1999


354. * H.S. Kim, H.X. Jiang, J.Y. Lin, W.W. Chow, A. Botchkarev, and H. Morkoc, "Piezoelectric Effects on the Dynamics of Optical Transitions in GaN/AlGaN Multiple Quantum Wells," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3624, 198 (1999).


355. J.Z. Li,  H.X. Jiang, J.Y. Lin, J.F. Geisz, and Sarah R. Kurtz, "Persistent Photoconductivity in Ga1-xInxNyAs1-y" Appl. Phys. Lett. 75, 1899 (1999) doi: 10.1063/1.124865 Ι PDF


356. M.O Manasreh, J.M. Baronowsky, K. Pakula,  H.X. Jiang, J.Y. Lin, "Localized Vibrational Modes of Carbon-Hydrogen Complexes in GaN," Appl. Phys. Lett. 75, 659 (1999). doi: 10.1063/1.124473 Ι PDF


357. J.M. Zavada, R.A. Mair, C.J. Ellis,  H.X. Jiang, J.Y. Lin, and R.G. Wilson, "Optical Transitions in Pr Ion-Implanted GaN," Appl. Phys. Lett. 75, 790 (1999). doi: 10.1063/1.124514 Ι PDF


358. * H.X. Jiang and J.Y. Lin, "Optical properties of III-nitride microstructures," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), (1999), invited.


359. H.X. Jiang, J.Y. Lin , K.C. Zeng, and W. Yang, "Optical resonance modes in GaN pyramid Microcavities," Appl. Phys. Lett. 75, 763 (1999).doi: 10.1063/1.124505 Ι PDF


360. K.C. Zeng, L. Dai, J.Y. Lin, and H.X. Jiang, "Optical resonance mode in InGaN/GaN multiple-quantum-well microring cavities," Appl. Phys. Lett. 75, 2563 (1999). doi: 10.1063/1.125078 Ι PDF


361.   L. S. Yu, D. Qiao, S. S. Lau, J. M. Redwig, J. Y. Lin , and H. X. Jiang, “Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN Heterostructure by photoconductance method,” J. Appl. Phys. 86, 2696 (1999).  doi: 10.1063/1.371113 Ι PDF


362. K.C. Zeng, J. Y. Lin, H. X. Jiang, and W. Yang, "Optical Properties of High Quality Insulating GaN Epilayers," Appl. Phys. Lett. 74, 3821 (1999). doi: 10.1063/1.124191 Ι PDF


363. K.C. Zeng, J. Y. Lin, H. X. Jiang, and W. Yang, "Optical Properties of GaN Pyramids," Appl. Phys. Lett. 74, 1227 (1999). doi: 10.1063/1.123507 Ι PDF


364. H. X. Jiang and J. Y. Lin, "Mode Spacing Anomaly in InGaN Blue Lasers," Appl. Phys. Lett. 74, 1066 (1999). doi: 10.1063/1.123483 Ι PDF


365. R. Mair, J. Li, S. K. Duan, J. Y. Lin, and H. X. Jiang, "Time-Resolved Photoluminescence of an Ionized Donor-Bound Exciton in GaN," Appl. Phys. Lett. 74, 513 (1999). doi: 10.1063/1.123171 Ι PDF


366. C. H. Wei, Z. Y. Xie, J. H. Edgar, K. C. Zeng, J. Y. Lin, H. X. Jiang, G. Jiji, J. Chaudhuri, and D. N. Braski, "Growth and Characterization of Bx Ga1-xN on 6H-SiC (0001)," MRS Internet J. Nitride Semicond. Res. 4S1, G3.79 (1999).


367. H.S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc "Piezoelectric effects in GaN/AlGaN Multiple Quantum Wells Probed By Picosecond Time-Resolved Photoluminescence," MRS Internet J. Nitride Semicond. Res. 4S1, G3.3 (1999).


368. J.M. Zavada, M. Thaik, U. H?mmerich, J. D. MacKenzie, C. R. Abernathy, F. Ren, H. Shen, J. Pamulapati, H. X. Jiang, J. Y. Lin, and R. G. Wilson, "Luminescence From Er-Doped GaN Thin Films," MRS Internet J. Nitride Semicond. Res. 4S1, G11.1 (1999), invited.


369. H. Morkoc R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, D. Pavlidis, and K.Shenai "Material Properties of GaN in the Context of Electron Devices," MRS Internet J. Nitride Semicond. Res. 4S1, G1.2 (1999), invited. doi: 10.1557/PROC-537-G1.2


370. H. Morkoc R. Cingolani, W. Lambrecht, B. Gil, H. X. Jiang, J. Lin, and D. Pavlidis "Spontaneous Polarization and Piezoelectric Field in Nitride Semiconductor Heterostructures", J. of the Korean Physical Society, 34 S224-S233 (1999), invited. doi: 10.3938/jkps.34.224


371. H. X. Jiang and J. Y. Lin, "Persistent Photoconductivity in GaN," A3.6 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).


372. H. X. Jiang and J. Y. Lin, "Time-Resolved Photoluminescence Studies of GaN," A3.5 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).


373. * J. Z. Li, J. Li, J. Y. Lin, and H. X. Jiang, “Correlation Between Sheet Carrier Density and Mobility Product and Persistent Photoconductivity in AlGaN/GaN Heterostructures,” Material Research Society Symposium Proceedings, Vol. 595 W11.12.1, Fall (1999). doi: 10.1557/PROC-595-F99W11.12


374. * M. Smith, R. Mair, H. X. Jiang, E. D. Jones, A. A. Allerman, and S. R. Kurtz, “Optical properties of In_xGa_1-xAs_1-yN_y ,” Material Research Society Symposium Proceedings, Fall (1999).

 ————     Year 1998


375. H.S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc, "Piezoelectric Effects on the Optical Properties of GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 3426 (1998). doi: 10.1063/1.122786 Ι PDF


376. S. K. Duan, X. Teng, Y. Wang, G. Li, H. X. Jiang, P. Han, and D. C. Lu, "MOVPE Growth of GaN and LED on (111) MgAl₂O₄," J. of Crystal Growth 175 (1998). doi: 10.1016/S0022-0248(98)00235-8 Ι PDF


377. D.N. McIlroy, S.D. Hwang, K. Yang, N. Remmes, P.A. Dowben, A.A. Ahmad, N.J. Ianno, J. Z. Li, J. Y. Lin, and H. X. Jiang, "The Incorporation of Nickel and Phosphorus Dopants Unto Boron-Carbon Alloy Thin Films," Appl. Phys. A67, 335 (1998). doi: 10.1007/s003390050780 Ι PDF


378. K.C. Zeng, R. Mair, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett., "Plasma Heating in Highly Excited GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 2476 (1998).doi: 10.1063/1.122487 Ι PDF


379. K.C. Zeng, J. Y. Lin, and H. X. Jiang, "Collective Effects of Interface Roughness and Alloy Disorder in InGaN/GaN Multiple Quantum Wells," Appl. Phys. Lett. 73, 1724 (1998). doi: 10.1063/1.122258 Ι PDF


380. H.B. Yu, H. Htoon, A. Delozanne, C. K. Shih, P.A. Grudowski, R. D. Dupuis, K.C. Zeng, R. Mair, J. Y. Lin, and H. X. Jiang "Dynamics of localized excitons in InGaN/GaN quantum," J. Vac. Sci. & Tech. B16, 2215 (1998). doi: 10.1116/1.590150 Ι PDF


381. J.Z. Li, J. Y. Lin, H. X. Jiang, and M. A. Khan, "Effects of Persistent Photoconductivity on the Characteristic Performance of an AlGaN/GaN Heterostructure Ultraviolet Detector," Appl. Phys. Lett. 72, 2868 (1998). doi: 10.1063/1.121485 Ι PDF


382. R. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, W. Kim, A.Botchkarevand, H. Morkoc, and M. Asif Khan, "Optical Modes Within III-Nitride Multiple Quantum Well Microdisk Cavities," Appl. Phys. Lett. 72, 1530 (1998). doi: 10.1063/1.120573 Ι PDF


383. H.X. Jiang and J. Y. Lin, "Dynamics of Fundamental Optical transitions in GaN," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3277, 108 (1998), invited. doi: 10.1117/12.306144 Ι PDF
     
     
384. * K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, H. Morkoc, and M. Asif Khan, "Optical Transitions and Dynamic Processes in III-Nitride Epilayers and Multiple Quantum Wells," IEEE International Symposium on Compound Semiconductors, edited by Mike Melloch and Mark Reed, p235, 1998 IEEE. doi: 10.1109/ISCS.1998.711625 Ι PDF


385. * R. Mair, K.C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, W. Kim, A. Botchkarevand, H. Morkoc, and M. Asif Khan, "Photoluminescence Properties of GaN/AlGaN Multiple Quantum Well Micro-disks," Symposium Proceedings of Materials Research Society, Vol 482, 649 (1998). doi: 10.1557/PROC-482-649


386. * K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, H. Morkoc, and M. Asif Khan, "Well Thickness and Doping Effects, and Room Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Symposium Proceedings of Materials Research Society, Vol 482, 643 (1998). doi: 10.1557/PROC-482-643

 ————     Year 1997


387. R. Mair, K.C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, H. Tang, W. Kim, A. Botchkarevand and H. Morkoc, "Optical Properties of GaN/AlGaN Multiple Quantum Well Micro-disks," Appl. Phys. Lett. 71, 2898 (1997). doi: 10.1063/1.120209 Ι PDF


388. * J. Z. Li, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Persistent Photoconductivity in p-Type GaN Epilayers and n-type AlGaN/GaN Heterostructures," Symposium Proceedings of Materials Research Society, Fall, 1996, Vol. 449, 537(1997). doi: 10.1557/PROC-449-537


389. * M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Optical Transitions and Recombination Lifetimes in GaN and InGaN Epilayers, and InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Symposium Proceedings of Materials Research Society, Vol 449, 829 (1997). doi: 10.1557/PROC-449-829


390. K.C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, and H. Morkoc, "Effects of Well Thickness and Si-Doping on the Optical Properties of GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 71, 1368 (1997). doi: 10.1063/1.119896 Ι PDF


391. K.C. Zeng, M. Smith, J. Y. Lin, H. X. Jiang, J. C. Robert, E. L. Piner, F. G. McIntosh, S. M. Bedair, and J. Zavada, "Optical Transitions in InGaN/AlGaN Single Quantum Wells," J. Vac. & Sci. Tech. B15, 1139 (1997). doi: 10.1116/1.589428 Ι PDF


392. J.Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Two-Dimensional Electron Gas in AlGaN/GaN Heterostructure," J. Vac. & Sci. Tech. B15, 1117 (1997). doi: 10.1116/1.589424 Ι PDF


393. * M. Smith, K. C. Zeng, J. Y. Lin, "Effects of Well Thickness on the Light Emission Properties in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," 1997 Digest of the LEOS Summer Topical Meeting on GaN Materials, Processing, and Devices, p31. doi: 10.1109/LEOSST.1997.619249 Ι PDF


394. J.Z. Li, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Persistent Photo-conductivity and Two Dimensional Electron Gas in AlGaN/GaN Heterostructures," J. Appl. Phys. 82, 1227 (1997). doi: 10.1063/1.36589 Ι PDF


395. M. Smith, J. Y. Lin, H. X. Jiang, and A. Khan, "Room Temperature Intrinsic Optical Transitions in GaN Epilayers: the Band-to-Band versus Excitonic Transition," Appl. Phys. Lett. 71, 635 (1997). doi: 10.1063/1.119813 Ι PDF


396. M. Smith, J. Y. Lin, H. X. Jiang, A. Khan, Q. Chen, A. Salvador, A. Borchkarev, and H. Morkoc, "Exciton-Phonon Interactions in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells," Appl. Phys. Lett. 70, 2882 (1997). doi: 10.1063/1.119030 Ι PDF


397. R.J. Bandaranayake, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Synthesis and Properties of Cd_1-xMn_xS Diluted Magnetic Semiconductor Ultrafine Particles," J. of Magnetism & Magnetic Materials, 169, 289 (1997). doi: 10.1016/S0304-8853(96)00746-9


398. C.J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang, M. Asif Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Jiang, "Quantum Shift of Band-Edge Stimulated Emission in InGaN-GaN Multiple Quantum Well Light-Emitting Diodes," Appl. Phys. Lett. 70, 2978 (1997). doi: 10.1063/1.118762 Ι PDF


399. S.D. Hwang, K. Yang, P. A. Dowben, A. A. Ahmad, N. J. Ianno, J. Z. Li, J. Y. Lin, H. X. Jiang, and D. N. Mcllroy, "Fabrication of n-Type Nickel Doped B5C1+d Homojunction and Heterojunction Diodes," Appl. Phys. Lett. 70, 1028 (1997). doi: 10.1063/1.118434 Ι PDF


400. H.X. Jiang, J. Y. Lin, M. Asif Khan, Q. Chen, and J. W. Yang, "Surface Emission of In_xGa_1−xN Epilayers under Strong Optical Excitation," Appl. Phys. Lett. 70, 984 (1997). doi: 10.1063/1.118456 Ι PDF

 ————     Year 1996


401. M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, H. Kim, and H. Morkoc "Optical Transitions in GaN/Al_xGa_1−xN Multiple Quantum Wells Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 69, 2453 (1996). doi: 10.1063/1.117495 Ι PDF


402. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and Q. Chen, "Time-Resolved Photoluminescence Studies of InGaN Epilayers," Appl. Phys. Lett. 69, 2837 (1996). doi: 10.1063/1.117335 Ι PDF


403. J.Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, and H. Morkoc, "Nature of Mg Impurities in GaN," Appl. Phys. Lett. 69, 1474 (1996). doi: 10.1063/1.116912 Ι PDF


404. M. Smith, J. Y. Lin, and H. X. Jiang, "Disorder and Persistent Photoconductivity in ZnxCd1-xSe Semiconductor Alloys," Phys. Rev. B54, 1471 (1996). doi: 10.1103/PhysRevB.54.1471 Ι PDF


405. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Free Excitonic Transitions in GaN Grown by Metal-Organic Chemical Vapor Deposition," J. Appl. Phys. 79, 7001 (1996). doi: 10.1063/1.362448 Ι PDF


406. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, S.-H. Wei, M. Asif Khan, and C. J. Sun, "Fundamental Optical Transitions in GaN," Appl. Phys. Lett. 68, 2784 (1996). doi: 10.1063/1.116606 Ι PDF


407. G. D. Chen, J. Y. Lin, and H. X. Jiang, "Effects of Electron Mass Anisotropy on Hall Factors in 6H-SiC," Appl. Phys. Lett. 68, 1341 (1996).doi: 10.1063/1.115928 Ι PDF


408. C. Johnson, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Metastability and Persistent Photoconductivity in Mg-Doped P-type GaN," Appl. Phys. Lett. 68, 1808 (1996). doi: 10.1063/1.116020 Ι PDF


409. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, "Mechanisms of Band-Edge Emissions in Mg-Doped P-type GaN," Appl. Phys. Lett. 68, 1883 (1996). doi: 10.1063/1.116282 Ι PDF


410. G.D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, "Photoluminescence Studies of Band-Edge Transitions in GaN Epitaxial Layers Grown by Molecular Beam Epitaxy," J. Appl. Phys. 79, 2675 (1996). doi: 10.1063/1.361138 Ι PDF


411. * H. Morkoc, W. Kim, O. Aktas, A. Salvador, A. Botchkarev, D. C. Reynolds, D. C. Look, M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, T. J. Schmidt, X. H. Yang, W. Shan, and J. J. Song, "Optical Properties of Mg-GaN, GaN/AlGaN SCH Structures, and GaN on ZnO Substrates," Symposium Proceedings of Materials Research Society, 395, p527, 1996, invited. doi: 10.1557/PROC-395-527

 ————     Year 1995


412. M. Smith, G. D. Chen, J. Z. Li, J. Y. Lin, H. X. Jiang, A. Salvador, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, "Excitonic Recombination in GaN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 67, 3387 (1995). doi: 10.1063/1.114902 Ι PDF


413. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Acceptor-Bound Exciton Recombination in p-type GaN," Appl. Phys. Lett. 67, 3295 (1995). doi: 10.1063/1.115225 Ι PDF


414. G.D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, M. Asif Khan, and C. J. Sun, "Neutral-Donor-Bound Exciton Recombination Dynamics in GaN Grown by Metal- Organic Chemical Vapor Deposition," Appl. Phys. Lett. 67, 1653 (1995). doi: 10.1063/1.115046 Ι PDF


415. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, and H. Morkoc, "Dynamics of a Band-Edge Transition in GaN Grown by Molecular Beam Epitaxy," Appl. Phys. Lett. 66, 3474 (1995). doi: 10.1063/1.113768 Ι PDF


416. R.J. Bandaranayake, G. W. Wen, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Structural Phase Behavior in II-VI Semiconductor Quantum Dots," Appl. Phys. Lett. 67, 831 (1995). doi: 10.1063/1.115458 Ι PDF 


417. G.W. Wen, J. Y. Lin, and H. X. Jiang, "Quantum-Confined Stark Effects in Semiconductor Quantum Dots," Phys. Rev. B52, 5913 (1995). doi: 10.1103/PhysRevB.52.5913 Ι PDF 


418. R.J. Bandaranayake, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Structure and Spin-Glass Properties of Cd_0.5Mn_0.5S Diluted Magnetic Semiconductor Quantum Dots," IEEE, Transactions on Magnetics, 31, 3761 (1995). doi: 10.1109/20.489763 Ι PDF 


419. M. Smith, J. Y. Lin, and H. X. Jiang, "Transport Properties due to Alloy Disorder in Zn_xCd_1-xSe," Proc. of 22nd International Conference on the Physics of Semiconductors, 3, 1827 (1995). 


420. * A. Dissanayake, W. Hein, J. Y. Lin, and H. X. Jiang, "Exciton Dynamics and Quantum- Confined Stark Effects in CdS_1−xSe_x Quantum Dots," Proc. of 22nd International Conference on the Physics of Semiconductors, 1, 85 (1995). 


421. M. Smith, J. Y. Lin, and H. X. Jiang, "Metal-Insulator Transition In Semiconductor Alloys Probed by Persistent Photoconductivity," Phys. Rev. B51, 4132, (1995). doi: 10.1103/PhysRevB.51.4132 Ι PDF 


422. A.S. Dissanayake, J. Y. Lin, and H. X. Jiang, "Quantum-Confined Stark Effects in CdS_1−xSe_x Quantum Dots," Phys. Rev. B51, 5457, (1995). doi: 10.1103/PhysRevB.51.5457 Ι PDF

 ————     Year 1994


423. A. S. Dissanayake, J. Y. Lin, H. X. Jiang, Z. J. Yu, and J. H. Edgar, "Low Temperature MOCVD Epitaxial Growth and Photoluminescence Characterization of GaN," Appl. Phys. Lett. 65, 2317 (1994). doi: 10.1063/1.112729 Ι PDF


424. R. J. Bandaranayake, M. Smith, J. Y. Lin, H. X. Jiang, and C. M. Sorensen, "Synthesis and Properties of Cd_1-xMn_xS Diluted Magnetic Semiconductor Nanoparticles," IEEE Trans. on Magnetics, 30, 4930(1994). doi: 10.1109/20.334269 Ι PDF


425. M. Smith, A. Dissanayake, and H. X. Jiang, "Relaxation of Spin-Glass Magnetization in Cd1-xMnxTe Diluted Magnetic Semiconductors," Phys. Rev. B 49,4514 (1994). doi: 10.1103/PhysRevB.49.4514 Ι PDF


426. P. Staikov, D. Baum, J. Y. Lin, and H. X. Jiang, "Evidence for Bistable Defects in 6H-SiC," Solid State Commun. 89, 995 (1994). doi: 10.1016/0038-1098(94)90501-0 Ι PDF


427. M. Smith, A. Dissanayake, H. X. Jiang, and L. X. Li, "Relaxation of Magnetization in Cd_1-xMn_xTe Diluted Magnetic Semiconductors under Illumination," J. Appl. Phys. 75, 5734 (1994). doi: 10.1063/1.355598 Ι PDF


428. M. Smith, A. Dissanayake, H. X. Jiang, and L. X. Li, "Relaxation of Magnetization in Cd_1-xMn_xTe Diluted Magnetic Semiconductors under Illumination," J. Appl. Phys. 75, 5734 (1994). doi: 10.1063/1.355598 Ι PDF


429. * P. Staikov, D. Baum, J. Y. Lin, and H. X. Jiang, "Persistent Photoconductivity and Carrier Mobility in Nitrogen Doped 6H-SiC," Proc. of Inter. Conf. on SiC and Related Materials, p235 (1994).

 ————     Year 1993


430. A. Dissanayake, J. Y. Lin, and H. X. Jiang, "Persistent Photoconductivity in Zn_0.043Cd_0.96Te Semiconductor Thin Films," Phys. Rev. B 48, 8145 (1993). doi: 10.1103/PhysRevB.48.8145 Ι PDF


431. J. Y. Lin, A. Dissanayake, and H. X. Jiang, "DX Centers in Al_0.34Ga_0.66As Amorphous Thin Films," Solid State Commun. 87, 787 (1993). doi: 10.1016/0038-1098(93)90414-I Ι PDF


432. E. X. Ping and H. X. Jiang, "Effect of Charge Carrier Screening on the Exciton Binding Energy in GaAs/Al_xGa_1-xAs Quantum Wells," Phys. Rev. B 47, 2101 (1993). doi: 10.1103/PhysRevB.47.2101 Ι PDF

 ————     Year 1992


433. A. S. Dissanayake and H. X. Jiang, "Lattice Relaxed Impurity and Persistent Photoconductivity in Nitrogen Doped 6H-SiC," Appl. Phys. Lett. 61, 2048 (1992). doi: 10.1063/1.108328 Ι PDF


434. J. Y. Lin, A. Dissanayake, and H. X. Jiang, "Electric-Field-Enhanced Persistent Photoconductivity in a Zn_0.02Cd_0.98Te Semiconductor Alloy," Phys. Rev. B 46, 3810 (1992). doi: 10.1103/PhysRevB.46.3810 Ι PDF


435. A. S. Dissanayake, M. Elahi, H. X. Jiang, and J. Y. Lin, "Kinetics of Persistent Photoconductivity in Al_0.3Ga_0.7As and Zn_0.3Cd_0.7Se Semiconductor Alloys," Phys. Rev. B 45, 13996 (1992). doi: 10.1103/PhysRevB.45.13996 Ι PDF


436. H. X. Jiang, A. Dissanayake, and J. Y. Lin, "Band-Tail States in a Zn_0.3Cd_0.7Se Semiconductor Alloy Probed by Persistent Photoconductivity," Phys. Rev. B 45, 4520 (Rapid Commun.) (1992). doi: 10.1103/PhysRevB.45.4520 Ι PDF

 ————     Year 1991


437. A. S. Dissanayake, S. X. Huang, H. X. Jiang, and J. Y. Lin, "Charge Storage and Persistent Photoconductivity in a CdS_0.5Se_0.5 Semiconductor Alloys," Phys. Rev. B 44, 13343 (1991). doi: 10.1103/PhysRevB.44.13343 Ι PDF


438. H. X. Jiang, G. Brown, and J. Y. Lin, "Persistent Photoconductivity in II-VI and III-V Semiconductor Alloys and a Novel Infrared Detector," J. Appl. Phys. 69, 6701 (1991). doi: 10.1063/1.348889 Ι PDF

 ————     Year 1990


439. J. Y. Lin, D. Baum, A. Honig, and H. X. Jiang, "Dynamics of Bound-Exciton Energy Transformation To Edge-Luminescence Centers in CdS," J. Lumines. 45, 251 (1990). doi: 10.1016/0022-2313(90)90160-D Ι PDF


440. J. Y. Lin, S. X. Huang, L. Q. Zu, E. X. Ping, and H. X. Jiang, "Persistent Photoconductivity In Cd_0.7Zn_0.3Se Mixed Crystals," J. Lumines. 45, 198 (1990). doi: 10.1016/0022-2313(90)90144-Z Ι PDF


441. H. X. Jiang, L. Q. Zu, and J. Y. Lin, "Dynamics of Exciton Localization In CdSe_0.5S_0.5 Mixed Crystals," Phys. Rev. (Rapid Commun.) B 42, 7284 (1990). doi: 10.1103/PhysRevB.42.7284 Ι PDF


442. J. Y. Lin, A. Dissanayake, G. Brown, and H. X. Jiang, "Relaxation of Persistent Photoconductivity in Al_0.3Ga_0.7As," Phys. Rev. B 42, 5855 (1990). doi: 10.1103/PhysRevB.42.5855 Ι PDF


443. H. X. Jiang, E. X. Ping, P. Zhou, J. Y. Lin, "Dynamics of Exciton Transfer Between the Bound and the Continuum States in GaAs-Al_xGa_1-xAs Multiple Quantum Wells," Phys. Rev. B (Rapid Commun.) 41, 12949 (1990). doi: 10.1103/PhysRevB.41.12949 Ι PDF


444. J. Y. Lin and H. X. Jiang, "Relaxation of Stored Charge Carriers in Zn_0.3Cd_0.7Se Mixed Crystals," Phys. Rev. B 41, 5178 (1990). doi: 10.1103/PhysRevB.41.5178 Ι PDF


445. H. X. Jiang and J. Y. Lin, "Percolation Transition of Persistent Photoconductivity in II-VI Mixed Crystals," Phys. Rev. Lett. 64, 2547 (1990). doi: 10.1103/PhysRevLett.64.2547 Ι PDF


446. S. A. Solin, H. X. Jiang, H. Kim, and T. J. Pinnavaia, "Raman Spectra of Tetramethylammonium-Trimethylammonium Mixed Ion Vermiculite Clay Intercalation Compounds," J. Raman Spectra. 21, 103 (1990). doi: 10.1002/jrs.1250210207

 ————     Year 1989


447. P. Zhou, H. X. Jiang, R. S. Bannwart, S. A. Solin, and G. Bai, "Excitonic Transition In GaAs-Al_xGa_1-xAs Multiple Quantum Wells Affected by Interface Roughness," Phys. Rev. B 40, 11862 (1989). doi: 10.1103/PhysRevB.40.11862 Ι PDF


448. E. X. Ping and H. X. Jiang, "Resonant Tunneling of Double Barrier Quantum Wells Affected by Interface Roughness," Phys. Rev. B 40, 11792 (1989). doi: 10.1103/PhysRevB.40.11792 Ι PDF


449. J. Y. Lin and H. X. Jiang, "Electronic Structure and Dispersion of Compensated n-i-p-i Superlattices with Small Period Lengths," Phys. Rev. B 40, 5561 (1989). doi: 10.1103/PhysRevB.40.5561 Ι PDF


450. H. X. Jiang and J. Y. Lin, "Persistent Photoconductivity and Related Critical Phenomena in Zn_0.3Cd_0.7Se," Phys. Rev. (Rapid Commun.) B 40, 10025 (1989). doi: 10.1103/PhysRevB.40.10025 Ι PDF


451. J. Y. Lin, Q. Zhu, D. Baum, and A. Honig, "Direct Observation of Edge-Luminescence Excited by Long-Lived-Exciton-Polariton Propagation in CdS," Phys. Rev. (Rapid Commun.) B 40, 1385 (1989). doi: 10.1103/PhysRevB.40.1385 Ι PDF


452. * H. X. Jiang, P. Zhou, S. A. Solin, and G. Bai, "Interface Roughness of Quantum Wells Studied by Time-Resolved Photoluminescence," Chemistry and Defects in Semiconductors Heterostructure, eds. by M. Kawabe, T.D. Sands, E.R. Weber, and R.S. Williams (MRS, Vol. 148, Pittsburgh, 1989) p. 361. doi: 10.1557/PROC-148-361

 ————     Year 1988


453. H. X. Jiang and J. Y. Lin, "Semiconductor Superlattices with Periodic Disorder," J. Appl. Phys. 63, 1984 (1988). doi: 10.1063/1.341098 Ι PDF


454. H. Yan and H. X. Jiang, "Band Structure of Compensated n-i-p-i Superlattice," Phys. Rev. B 37, 6425 (1988). doi: 10.1103/PhysRevB.37.6425 Ι PDF


455. H. X. Jiang, "Neutral Donor-Acceptor-Pair Recombination under a Uniform Electric Field," Phys. Rev. B 37, 4126 (1988). doi: 10.1103/PhysRevB.37.4126 Ι PDF


456. D. Baum, H. X. Jiang and A. Honig, "The Correlation of Excitation Spectroscopy of Edge Luminescence and Persistent Photoconductivity in CdS," J. Lumines. 40, 119 (1988). doi: 10.1016/0022-2313(88)90116-0 Ι PDF


457. H. X. Jiang, D. Baum and A. Honig, "Dynamics and Spatial Distribution of Edge Luminescence Generators in CdS," J. Lumines. 40, 557 (1988). doi: 10.1016/0022-2313(88)90328-6 Ι PDF


458. * H. X. Jiang and H. Yan, "Dispersion and Miniband Structure of Compensated n-i-p-i Doping Superlattices," in Quantum Well and Superlattices Physics II, eds. by F. Capasso, G. Dohler and J. Schulman (SPIE, Vol. 943, Washington, 1988) p. 124


459. * S. A. Solin and H. X. Jiang, "Raman Spectra of Clay Intercalation Compounds - Mixed Ion Vermiculites," in Vibrational Spectra and Structure, ed. by H.D. Bist and J.R. Durig, (Elsevier, Amsterdam, 1988).


460. * H. X. Jiang, S. A. Solin, H. Kim and T. J. Pinnavaia, "Raman Spectra of Ion Intercalated Vermiculites," in Microstructure and Properties of Catalysts, ed. by M.M.J. Treacy, J.M. Thomas, and J.M. White, (Materials Research Society, Pittsburgh, 1988), p. 225. doi: 10.1557/PROC-111-225

 ————     Year 1987


461. H. X. Jiang and J. Y. Lin, "Band Structure of Non-Ideal Semiconductor Superlattices," Superlattices and Microstructures 3, 689 (1987). doi: 10.1016/0749-6036(87)90200-X Ι PDF


462. H. X. Jiang and J. Y. Lin, "Band Structure of Superlattices with Graded Interfaces," J. Appl. Phys. 61, 624 (1987). doi: 10.1063/1.338214 Ι PDF


463. H. X. Jiang, "Strong-Perturbation Theory for Impurities in Semiconductors," Phys. Rev. B 35, 9287 (1987). doi: 10.1103/PhysRevB.35.9287 Ι PDF

 ————     Year 1986


464. H. X. Jiang and J. Y. Lin, "Superlattice with Multiple Layers per Period," Phys. Rev. B 33, 5851 (1986). doi: 10.1103/PhysRevB.33.5851  Ι PDF


465. H. X. Jiang and J. Y. Lin, "The Ground State of a Particle under the Influence of a Uniformly Charged Sphere," Am. J. Phys. 54, 1046 (1986). doi: 10.1119/1.14823 Ι PDF

 ————     Year 1985


466. H. X. Jiang and J. Y. Lin, "Precession of Kepler's Orbit," Am. J. Phys. 53, 694 (1985). doi: 10.1119/1.14287 Ι PDF


467. H. X. Jiang, "Characterization of Si Electrode - Electrolyte Interface Under Illumination," Appl. Phys. Commun. 5, 231 (1985).

       Notice:  * indicate proceeding papers

Books, Book Chapters and Review Articles

   Invited review articles in scientific journals

1. H. X. Jiang and J. Y. Lin, "Dynamics of Fundamental Optical transitions in GaN," Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), Vol 3277, 108 (1998).
2. H. X. Jiang and J. Y. Lin, “Optical properties of III-nitride microstructures,” Proceeding of Society of Photo-Optical Instrumentation Engineers (SPIE), (1999).
3. H. X. Jiang and J. Y. Lin, Book Review for “Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiGe, by Michael E. Levinshtein, Serge L. Rumyantsev, and Michael S. Shur, Eds (John Wiley & Sons, New York, 2001), MRS Bulletin, Vol. 26, 728 (2001).
4. H. X. Jiang and J. Y. Lin, “AlGaN and InAlGaN Alloys – Epitaxial Growth, Optical and Electrical Properties, and Applications,” in a special issue of Opto-Electronics Review, 10, 271 (2002).
5. H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Microstructures and Micro-Size Emitters,” J. of the Korean Physical Society, 42, S757 (2003).
6. J. Y. Lin and H. X. Jiang, “Recent Advances in III-Nitride Ultraviolet Photonic Materials and Devices,” J. of the Korean Physical Society, 42, S535 (2003).
7. J. Y. Lin and H. X. Jiang, “III-Nitride Ultraviolet Photonic Materials – Epitaxial Growth, Optical and Electrical Properties, and Applications,” Proceedings of SPIE on Quantum Sensing, 4999, 287 (2003).
8. H. X. Jiang & J. Y. Lin, “III-Nitride Quantum Devices – Microphotonics,” CRC Critical Reviews in Solid State and Materials Sciences, (P. Holloway, Editor), 28, 131 (2003).
9. Z. Y. Fan, J. Y. Lin, and H. X. Jiang, “III-nitride micro-emitter arrays: development and applications,” J. Phys. D: Appl. Phys. 41 094001 (2008).
10. H.X. Jiang and J.Y. Lin, "Semiconductor lasers: Expanding into blue and green," Nature Photonics 5 521 (2011) doi:10.1038/nphoton.2011.210 Ι PDF

Invited feature articles written for popular trading magazines

11. H. X. Jiang and J. Y. Lin, “Microdisplays Based on III-Nitride Wide Band Gap Semiconductors,” oe magazine (The Monthly Publication of SPIE-The internal Society for Optical Engineering), July 2001 issue, page 28.
12. H. X. Jiang and J. Y. Lin, “Advances in III-Nitride Micro-Size Light Emitters,” III-Vs Review, 14, 35 (2001) [June/July 2001 issue].
13. H. X. Jiang, J. Y. Lin, R. Hui, and J. Zavada, “III-nitrides show promise for telecomm wavelengths,” Laser Focus World, Nov. issue, S8 (2003).
14. J. Y. Lin, J. Day, J. Li, D. Lie, C. Bradford, and H. X. Jiang, "High-resolution group III nitride microdisplays," SPIE Newsroom, Dec. issue (2011). Ι PDF

   Books edited

15. "Ultrafast Phenomena in Semiconductors V (Proceedings of SPIE)," Hongxing Jiang, Kong-thon F. Tsen and Jin-Joo Song,(SPIE-International Society for Optical Engineers, 2001)
16. "III-Nitride Semiconductors: Optical Properties (Optoelectronic Properties of Semiconductors and Superlattices, V. 14-15)," M.O. Manasreh and Hongxiang Jiang (CRC, 2002)
17. "Ultrafast Phenomena in Semiconductors VI, " Kong Thon Tsen, Jin-Joo Song and Hongxing Jiang, (SPIE Society of Photo-Optical Instrumentation Engineers, 2002)
18. "Ultrafast Phenomena in Semiconductors: VII (Proceedings of SPIE)," Kong-Thon F. Tsen, Jin-Jong Song and Hongxing Jiang, (SPIE-International Society for Optical Engineers, 2003)
19. "Ultrafast Phenomena In Semiconductors And Nanostructure Materials IX (Proceedings of SPIE)," Kong-Thon F Tsen, Jin-Joo Song and Hongxing Jiang, (Society of photo-optical instrumentation engineers, 2005)
20. "Ultrafast Phenomena in Semiconductors and Nanostructure Materials X (Proceedings of Spie)," Kong-Thon F Tsen, Jin-Joo Song and Hongxing Jiang, (SPIE-International Society for Optical Engineers, 2006)
21. "Wide Bandgap Light Emitting Materials And Devices," Gertrude F. Neumark, Igor L. Kuskovsky and Hongxing Jiang, (Wiley-VCH 2007)
22. "Compound Semiconductors for Generating, Emitting, and Manipulating Energy," MRS Fall 2011 Meeting Proceedings (Symposium O), Edited by T. Li, M. Mastro, R. Dagar, H. X. Jiang, and J. Kim.

   Invited book chapters

23. H. X. Jiang and J. Y. Lin, "Time-Resolved Photoluminescence Studies of GaN," A3.5 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).
24. H. X. Jiang and J. Y. Lin, "Persistent Photoconductivity in GaN," A3.6 in Gallium Nitride and Related Compounds, EMIS Datareview Series, Edited by J. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, (The Institute of Electrical Engineers, London, 1999).
25. H. X. Jiang and J. Y. Lin, “Persistent photoconductivity in III-nitrides,” Chapter 5 in "III-Nitride Semiconductors: Electrical, Structural and Defects Properties" edited by M. O. Manasreh, (Elsevier Science, 2000).
26. H. X. Jiang, J. Y. Lin, and W. W. Chow  “Time-Resolved Photoluminescence Studies of III-Nitrides,” Chapter 1 in "Optical Properties of III-Nitrides I" edited by M .O. Manasreh and H. X. Jiang, (Taylor & Francis Books, New York & London 2002).
27. H. X. Jiang and J. Y. Lin, “Carrier Dynamics Probed by Time-Resolved Photoluminescence,”– in “Ultrafast Dynamics Processes in Semiconductors,” Book Volume 92 – Topics in Applied Physics, edited by K. T. Tsen, published by Springer-Verlag Berlin, (Berlin Heidelberger, 2004).
28. H. X. Jiang & J. Y. Lin, "AlN Epitaxial Layers for UV Photonics" – Chapter 7 in Optoelectronic Devices: III-Nitride, edited by M. Razeghi and M. Heini, published by Elsevier Ltd. (Amsterdam, 2004).
29. H. X. Jiang and J. Y. Lin, “III-Nitride Micro-Cavity Light-Emitters,” – in “Wide Bandgap Light-Emitting Materials and Devices,” edited by G.F. Neumark, I. Kuskovsky, and H. X. Jiang, published by Wiley –VCH Verlag GmbH, 2007.
30. R. Dahal, J. Y. Lin, H. X. Jiang, and J. Zavada, "Er doped InxGa1-xN for optical communications," Chapter 5 in Rare-earth doped III-Nitrides for Optoelectronic and Spintronic Applications, edited by K. O’Donnell & V. Dierolf, Canopus Academic Publishing Ltd and Springer SBM. (2010)
31. J. Li, J. Y. Lin, H. X. Jiang, and N. Sawaki, "III-Nitrides on Si Substrates," Chapter 3 in III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics, edited by T. Li, M. Mastro and A. Dadgar, published by CRC Press (Boca Raton 2010).
32. A. Sedhain, J.Y. Lin, and H.X. Jiang, "AlN: Properties and Applications," Chapter 2 in Handbook of Luminescent Semiconductor Materials, edited by L. Bergman and L. McHale, published in September, 2011 by CRC Press, Taylor & Francis Group (ISBN-13: 978-1439834671).
33. B. N. Pantha, J. Y. Lin, and H. X. Jiang, "High qaulity Al-rich AlGaN alloys," Chapter 2 in GaN and ZnO-based Materials and Devices, edited by S.J. Pearton, published in February 2012 by Springer, Springer Series in Materials Science (ISBN: 978-3-642-23520-7).
34. T. N. Oder, J. Y. Lin, and H. X. Jiang, "III-nitride photonics crystals for lighting applications," Chapter 6 in "Handbook of Microcavities", Pan Stanford Publishing, 2015, ISBN 978-981-4463-24-9 (Hardcover), 978-981-4463-25-6 (ebook).
35. N. Napal, H. X. Jiang, J. Y. Lin, B. Mitchell, V. Dierolf, and J. M. Zavada, "MOCVD growth of Er-doped III-N and optical-magnetic characterization," Chapter 7 in "Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics," edited by V. Dierolf, I. T. Ferguson, and J. M. Zavada, Woodhead Publishing, Elsevier, 2016, pp. 225-255.