Nanophotonics research in the TTU Nano Tech Center is primarily concerned with materials growth and device fabrication of AlGaN semiconductors. Spanning a wavelength range from 364 to 200 nm, these materials may be used to produce deep ultraviolet light emitting diodes and solar blind detectors.
|MBE Laboratory||MOCVD Laboratory|
The nanoscale research includes molecular beam epitaxy of superlattices with periods controlled between 1 and 2 nm. In addition, we are using metallorganic chemical vapor deposition to grow nanostructures of GaN using self-assembly and nanolithography.
|MBE Superlattice||GaN Selective Epitaxy|