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Nanophotonics research in the TTU Nano Tech Center is primarily concerned with materials growth and device fabrication of AlGaN semiconductors. Spanning a wavelength range from 364 to 200 nm, these materials may be used to produce deep ultraviolet light emitting diodes and solar blind detectors.

MBE Laboratory MOCVD Laboratory
MBE Laboratory MOCVD Laboratory

The nanoscale research includes molecular beam epitaxy of superlattices with periods controlled between 1 and 2 nm. In addition, we are using metallorganic chemical vapor deposition to grow nanostructures of GaN using self-assembly and nanolithography.

MBE Superlattice GaN selective Epitaxy
MBE Superlattice GaN Selective Epitaxy