Advanced Semiconductors

Advanced semiconductors beyond Si and GaAs including wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors offer opportunities for realizing novel and higher performing devices. On-going efforts within ECE include epitaxial and bulk material synthesis by metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE); novel device design and fabrication; and exploration of WBG and UWBG semiconductors for new applications in fields of photonics, electronics, energy, national security, medical/health care, and material sciences.

Faculty members in Advanced Semiconductors are:

• Jiang, Hongxing (Nanophotonics Center)
• Kim, Taewoo
• Lie, Donald (RF-SOC Group)
• Lin, Jingyu (Nanophotonics Center)
• Nguyen, Hieu P. (Wide/Ultrawide Bandgap Semiconductors Laboratory)
• Joshi, Ravi (Joshi Group)