Stefan K. Estreicher
Stefan K. Estreicher received his PhD in theoretical physics from the University of Zürich in 1982, became a postdoc and then instructor at Rice University (Houston), and joined the faculty at Texas Tech University in 1986. He is now a Paul Whitfield Horn Professor of Physics. His theoretical research deals with defects in semiconductors and nanostructures, and their impact on the electrical, optical, and thermal properties of the material. He is a Fellow of the American Physical Society since 1997 and of the Institute of Physics (UK) since 2006. He won the 2001 Friedrich Wilhelm Bessel Prize from the Humboldt Foundation. He has given over 50 invited and plenary conferences and over 100 technical seminars around the world.
He is also interested in the history of wine, and has published a book and several papers in this area.
Properties and impact of defects in semiconductors.
‘First-principles' calculations for a wide range of defects an impurities, mostly in crystalline Si. Ongoing work deals with the possibility of using defects to control heat flow in semiconductors. Ab-initio molecular-dynamics simulations have shown that defects do not ‘scatter' thermal phonons but interact with heat flow via their own, localized, vibrational modes. The behavior of a heat front encountering a defect depends on the temperature and can be predicted. Ongoing calculations deal with designing a simple (theoretical) ‘thermal circuit' that would remove some of the heat generated by a CPU or laser pulse.
- M.B. Bebek, C.M. Stanley, T.M. Gibbons, and S.K. Estreicher, Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping, Nature Sci. Rep. 6, 32150 (2016)
- T. M. Gibbons, M. B. Bebek, By. Kang, C.M. Stanley, and S. K. Estreicher, Phonon-phonon interactions: first principles theory, J. Appl. Phys. 118, 085103 (2015)
- S.K. Estreicher, T.M. Gibbons, and M.B. Bebek, Heat flow and defects in semiconductors: the physical reason why defects reduce heat flow, and how to control it,J. Appl. Phys. 117, 112801 (2015)
- By. Kang and S.K. Estreicher, Thermal conductivity of Si nanowires: a first-principles analysis of the role of defects,Phys. Rev. B 89, 155409 (2014)
- S.K. Estreicher, T.M. Gibbons, and M. Stavola, Isotope-dependent phonon trapping at defects in semiconductors, Solid State Phenom. 205-206, 209 (2014)
- M. Stavola, S.K. Estreicher, and M. Seacrist, Light-element impurities and their reactions in multicrystalline Si, Solid State Phenom.205-206, 201 (2014)
- J. Lindroos, D.P. Fenning, D. Backlund, E. Verlage, A. Gorgulla, S.K. Estreicher, H. Savin, and T. Buonassisi, Nickel: a very fast diffuser in Si, J. Appl. Phys. 113, 204906(2013)
- T.M. Gibbons, S.K. Estreicher, K. Potter, F. Bekisli, and M. Stavola, Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si, Phys. Rev. B 87, 115207 (2013)
Department of Physics and Astronomy
AddressTexas Tech University, Physics & Astronomy Department, Box 41051, Lubbock, TX 79409-1051
Phone806.742.3767 | Fax: 806.742.1182